SSM6L12TU 2010-02-15 1 1.source1 2.gate1 3.drain2 4.source2 5.gate2 6.drain1 0.3-0.05 6 1.70.1 2.10.1 1.30.1 1 2 0.65 0.65 3 2.00.1 0.16-0.05 5 4 0.70.05 +0.1 +0.06 toshiba field effect transisto r silicon p/n channel mos type SSM6L12TU high-speed switching applications ? optimum for high-density mounting in small packages ? low on-resistance q1 : r ds(on) = 180m ? (max) (@v gs = 2.5 v) q2 : r ds(on) = 430m ? (max) (@v gs = -2.5 v) q1 absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gss 12 v dc i d 0.5 drain current pulse i dp 1.5 a q2 absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds -20 v gate-source voltage v gss 12 v dc i d -0.5 drain current pulse i dp -1.5 a absolute maximum ratings (q1,q2 common) (ta = 25c) characteristics symbol rating unit power dissipation p d (note 1) 500 mw channel temperature t ch 150 c storage temperature range t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decr ease in the reliability significantly even if the operating conditions (i.e . operating temperature/current/volta ge, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: mounted on fr4 board. (total dissipation) (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) marking equivalent circuit (top view) unit: mm uf6 jedec D jeita D toshiba 2-2t1b weight: 7.0 mg (typ.) q1 q2 654 123 6 k9 4 1 2 3 5
SSM6L12TU 2010-02-15 2 q1 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = ?12 v, v ds = 0 ? ? 1 a v (br) dss i d = 1 ma, v gs = 0 30 ? ? drain-source breakdown voltage v (br) dsx i d = 1 ma, v gs = ?12 v 18 ? ? v drain cut-off current i dss v ds = 30 v, v gs = 0 ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 0.1 ma 0.5 ? 1.1 v forward transfer admittance ? y fs ? v ds = 3 v, i d = 0.25 a (note 2) 1.0 2.0 ? s i d = 0.50 a, v gs = 4.5 v (note 2) ? 120 145 drain-source on-resistance r ds (on) i d = 0.25 a, v gs = 2.5 v (note 2) ? 140 180 m input capacitance c iss v ds = 10 v, v gs = 0, f = 1 mhz ? 245 ? pf reverse transfer capacitance c rss v ds = 10 v, v gs = 0, f = 1 mhz ? 33 ? pf output capacitance c oss v ds = 10 v, v gs = 0, f = 1 mhz ? 41 ? pf turn-on time t on ? 9 ? switching time turn-off time t off v dd = 10 v, i d = 0.25 a, v gs = 0 to 2.5 v, r g = 4.7 ? 15 ? ns note 2: pulse test switching time test circuit (a) test circuit (b) v in precaution v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d =100 a for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consideration when using the device. (c) v out v dd = 10 v r g = 4.7 duty 1% v in : t r , t f < 5 ns common source ta = 25c v dd out in 2.5 v 0 10 s r g t f t on 90% 10% 2.5 v 0 v 90% 10% t off t r v dd v ds ( on )
SSM6L12TU 2010-02-15 3 q2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = ?12v, v ds = 0 ? ? 1 a v (br) dss i d = -1 ma, v gs = 0 -20 ? ? drain-source breakdown voltage v (br) dsx i d = -1 ma, v gs = +12 v -8 ? ? v drain cut-off current i dss v ds = -20 v, v gs = 0 ? ? -1 a gate threshold voltage v th v ds = -3 v, i d = -0.1 ma -0.5 ? -1.1 v forward transfer admittance ? y fs ? v ds = -3 v, i d = -0.25 a (note 3) 0.65 1.3 ? s i d = -0.25 a, v gs = -4 v (note 3) ? 210 260 drain-source on-resistance r ds (on) i d = -0.25 a, v gs = -2.5 v (note 3) ? 310 430 m input capacitance c iss v ds = -10 v, v gs = 0, f = 1 mhz ? 218 ? pf reverse transfer capacitance c rss v ds = -10 v, v gs = 0, f = 1 mhz ? 42 ? pf output capacitance c oss v ds = -10 v, v gs = 0, f = 1 mhz ? 52 ? pf turn-on time t on ? 16 ? switching time turn-off time t off v dd = -10 v, i d = -0.25 a, v gs = 0 to -2.5 v, r g = 4.7 ? 15 ? ns note3: pulse test switching time test circuit precaution v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d =-100 a for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consideration when using the device. handling precaution when handling individual devices (which are not yet mount ed on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devic es should be made of anti-static materials. thermal resistance r th (ch-a) and power dissipation p d vary depending on board material, board area, board thickness and pad area. when using this device, please take heat dissipation into consideration v dd = -10 v r g = 4.7 duty 1% v in : t r , t f < 5 ns common source ta = 25c in 0 ? 2.5v 10 s v dd out r g r l (c) v out t on 10% 90% ?2.5 v 0 v 90% 10% t off t r t f v ds ( on ) v dd (b) v in (a) test circuit
SSM6L12TU 2010-02-15 4 q1(nch mos fet) rds(on) - id 0 20 40 60 80 100 120 140 160 180 200 0 200 400 600 800 1000 1200 1400 1600 drain current id (ma) drain-source on resistance rds(on) (m ? ) common source ta=25c vgs=4 .5 v 2.5v rds(on) - vgs 0 50 100 150 200 250 300 350 400 012345678910 gate-source voltage vgs (v) drain-source on resistance rds(on) (m ? ) common source id=500ma ta=100c 25c -25c id - vds 0 200 400 600 800 1000 1200 1400 1600 0 0.2 0.4 0.6 0.8 1 drain-source voltage vds (v) drain current id (ma ) common source ta=25c vgs=1.4v 1.6 1.8 2.0 5.0 3.0 4.0 id - vgs 0.01 0.1 1 10 100 1000 10000 0123 gate-source voltage vgs (v) drain current id (ma) common source vd s=3 v ta=100c 25c -25c rds(on) - ta 0 50 100 150 200 250 300 350 400 -60 -40 -20 0 20 40 60 80 100 120 140 160 ambient temperature ta (c) drain-source on resistance rds(on) (m ? ) common source vgs=4.5v,id=500ma 2.5v,250ma vth - ta 0 0.2 0.4 0.6 0.8 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 ambient temperature ta (c) gate threshold voltage vth(v) common source id=0.1m a vd s=3 v id - vds 0 200 400 600 800 1000 1200 1400 1600 0 0.2 0.4 0.6 0.8 1 drain-source voltage vds (v) drain current id (ma) common source ta=25 c vgs=1.4v 1.6 1.8 2.0 5.0 3.0 4.0 id - vds 0 200 400 600 800 1000 1200 1400 1600 0 0.2 0.4 0.6 0.8 1 drain-source voltage vds (v) drain current id (ma) common source ta=25 c vgs=1.4v 1.6 1.8 2.0 5.0 3.0 4.0 common source ta = 2 5 pulse test common source vds=3v pulse test common source ta = 2 5 pulse test common source id=500ma pulse test common source pulse test
SSM6L12TU 2010-02-15 5 q1(nch mos fet) common source vds=3v pulse test common source v gs = 0 v pulse test g d s i dr c - vds 10 100 1000 0.1 1 10 100 drain-source voltage vds (v) capacitance c (pf ) common source vgs=0v f=1mhz ta=25c ciss coss crss idr - vds 0 200 400 600 800 1000 1200 1400 1600 -1 -0.8 -0.6 -0.4 -0.2 0 drain-source voltage vds (v) drain reverse current idr (ma ) common source vgs=0 v ta=25c s idr g d |yfs| - id 0 1 10 10 100 1000 10000 drain current id (ma) forward transfer admittance |yfs| (s) common source vd s=3 v ta=25c ta=100c 25c -25c t - id 1 10 100 1000 10 100 1000 10000 drain current id (ma) switching time t (ns) common source vdd=10v vgs=0 ~ 2.5v ta=25c toff tr ton tf common source vdd=10v vgs=0 to 2.5v ta = 2 5
SSM6L12TU 2010-02-15 6 q2(pch mos fet) rds(on) - id 0 100 200 300 400 500 -1600 -1400 -1200 -1000 -800 -600 -400 -200 0 drain current id (ma) drain-source on resistance rds(on) (m ? ) common source ta=25c vgs=-4 v -2.5v rds(on) - vgs 0 100 200 300 400 500 -10-9 -8 -7-6-5 -4 -3-2 -1 0 gate-source voltage vgs (v) drain-source on resistance rds(on) (m ? ) common source id=-250ma ta=100c 25c -25c id - vds -1600 -1400 -1200 -1000 -800 -600 -400 -200 0 -1 -0.8 -0.6 -0.4 -0.2 0 drain-source voltage vds (v) drain current id (ma ) common source ta=25c vgs=-1 .6 -1.8 -2.0 -5.0 -3.0 -4.0 id - vgs 0.01 0.1 1 10 100 1000 10000 -3 -2 -1 0 gate-source voltage vgs (v) drain current id (ma) common source vd s=-3 v ta=100c 25 -25c - - - - - - - - rds(on) - ta 0 100 200 300 400 500 -60 -40 -20 0 20 40 60 80 100 120 140 160 ambient temperature ta (c) drain-source on resistance rds(on) (m ? ) vgs=-4 v -2.5v common source id=-250ma vth - ta -1 -0.8 -0.6 -0.4 -0.2 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 ambient temperature ta (c) gate threshold voltage vth(v) common source id=-0.1m a vd s=-3 v id - vds -1600 -1400 -1200 -1000 -800 -600 -400 -200 0 -1 -0.8 -0.6 -0.4 -0.2 0 drain-source voltage vds (v) drain current id (ma) common source ta=25 c vgs=-1.6 -1.8 -2.0 -5.0 -3.0 -4.0 id - vds -1600 -1400 -1200 -1000 -800 -600 -400 -200 0 -1 -0.8 -0.6 -0.4 -0.2 0 drain-source voltage vds (v) drain current id (ma) common source ta=25 c vgs=-1.6 -1.8 -2.0 -5.0 -3.0 -4.0 common source vds=-3v pulse test common source ta = 2 5 , pulse test common source ta = 2 5 pulse test common source id=-250ma pulse test common source id=-250ma pulse test
SSM6L12TU 2010-02-15 7 q2(pch mos fet) c - vds 10 100 1000 -0 -1 -10 -100 drain-source voltage vds (v) capacitance c (pf ) common source vgs=0v f=1mhz ta=25c ciss coss crss idr - vds 0 200 400 600 800 1000 1200 1400 1600 0.0 0.2 0.4 0.6 0.8 1.0 drain-source voltage vds (v) drain reverse current idr (ma ) common source vgs=0 v ta=25c |yfs| - id 0 1 10 -10 -100 -1000 -10000 drain current id (ma) forward transfer admittance |yfs| (s) common source vd s=-3 v ta=25c ta=100c 25c -25c t - id 1 10 100 1000 -10 -100 -1000 -10000 drain current id (ma) switching time t (ns) common source vdd=-10v vgs=0 ~- 2.5v ta=25c toff tr ton tf common source v gs = 0 v pulse test g d s i dr common source vds=-3v ta = 2 5 pulse test common source vdd=-10v vgs=0 to -2.5v t a=25
SSM6L12TU 2010-02-15 8 pd* - ta 0 200 400 600 800 1000 0 20 40 60 80 100 120 140 160 ambient temperature ta( ) drain power dissipation pd* (mw) mounted fr4 board ( 25.4mm*25.4mm*1. 6t cu pad :645mm 2 ) t=10s dc *:total rating pulse width t w (s) r th ? t w transient thermal impedance r th (c/w ) 0.001 1000 0.01 0.1 1 100 10 100 1000 1 10 single pulse mounted on fr4 board (25.4 mm 25.4 mm 1.6 mm, cu pad: 645 mm 2 ) mounted fr4 board (25.4 mm 25.4mm 1.6 mm) cu pad :645mm 2
SSM6L12TU 2010-02-15 9 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and condi tions set forth in the ?toshiba semiconductor reliability handbook? and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? a bsent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or m anufacturing of nuclear, chemical , or biological weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be controlled under the japanese foreign exchange and foreign trade law and the u.s. expor t administration regulations. ex port and re-export of product or related software or technology are strictly prohibited exc ept in compliance with all applicable export laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclusion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result o f noncompliance with applicable laws and regulations.
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