document number: 81579 for technical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.8, 26-mar-09 489 ambient light sensor temt6000x01 vishay semiconductors description temt6000x01 ambient light sensor is a silicon npn epitaxial planar phototransistor in a miniature transparent 1206 package for surface mounting. it is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm. features ? package type: surface mount ? package form: 1206 ? dimensions (l x w x h in mm): 4 x 2 x 1.05 ? aec-q101 qualified ? high photo sensitivity ? adapted to human eye responsivity ? angle of half sensitivity: ? = 60 ? floor life: 168 h, msl 3, acc. j-std-020 ? lead (pb)-free reflow soldering ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ambient light sensor for contro l of display backlight dimming in lcd displays and keypad backlighting of mobile devices and in industrial on/off-lighting operation. ? automotive sensors ? mobile phones ? notebook computers ? pda?s ? cameras ? dashboards note test condition see table ?basic char acteristics? note moq: minimum order quantity 1 8 527 product summary component i pce (a) ? (deg) 0.5 (nm) temt6000x01 50 60 440 to 800 ordering information ordering code packaging remarks package form temt6000x01 tape and reel moq: 3000 pcs, 3000 pcs/reel 1206 absolute maximum ratings parameter test condition symbol value unit collector emitter voltage v ceo 6v emitter collector voltage v eco 1.5 v collector current i c 20 ma power dissipation p v 100 mw
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81579 490 rev. 1.8, 26-mar-09 temt6000x01 vishay semiconductors ambient light sensor note t amb = 25 c, unless otherwise specified fig. 1 - power dissipation limit vs. ambient temperature note t amb = 25 c, unless otherwise specified junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature acc. refl ow solder profile fig. 8 t sd 260 c thermal resistance junction/ambient solder ed on pcb with pad dimensions: 4 mm x 4 mm r thja 450 k/w absolute maximum ratings parameter test condition symbol value unit 0204060 8 0 0 25 50 75 100 125 p v - po w er dissipation (m w ) t am b - am b ient temperat u re (c) 100 94 8 30 8 r thja = 450 k/ w basic characteristics parameter test condition symbol min. typ. max. unit collector emitter breakdown voltage i c = 0.1 ma v ceo 6v collector dark current v ce = 5 v, e = 0 i ceo 350na collector emitter capacitance v ce = 0 v, f = 1 mhz, e = 0 c ceo 16 pf collector light current e v = 20 lx, cie illuminant a, v ce = 5 v i pce 3.5 10 16 a e v = 100 lx, cie illuminant a, v ce = 5 v i pce 50 a temperature coefficient of i pce cie illuminant a tk ipce 1.18 %/k led, white tk ipce 0.9 %/k angle of half sensitivity ? 60 deg wavelength of peak sensitivity p 570 nm range of spectral bandwidth 0.5 440 to 800 nm collector emitter saturation voltage e v = 20 lx, cie illuminant a, i pce = 1.2 a v cesat 0.1 v
document number: 81579 for technical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.8, 26-mar-09 491 temt6000x01 ambient light sensor vishay semiconductors basic characteristics t amb = 25 c, unless otherwise specified fig. 2 - collector dark current vs. ambient temperature fig. 3 - relative photo current vs. ambient temperature fig. 4 - photo current vs. illuminance fig. 5 - collector emitter capacit ance vs. collector emitter voltage fig. 6 - relative spectral sensitivity vs. wavelength fig. 7 - relative radiant sens itivity vs. angular displacement 1975 8 100 8 0 60 40 20 0 - 20 - 40 t - am b ient temperat u re (c) am b i - collector dark c u rrent (a) ceo 10 10 -6 -7 10 - 8 10 -9 10 -10 10 -11 10 -12 10 -13 v ce = 5 v 19759 100 8 0 60 40 20 0 - 20 - 40 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 2.2 i - relati v e photo c u rrent pce rel t - am b ient temperat u re (c) am b v ce = 5 v , t = 2 8 56 k 19760 1 10 100 1000 10 100 1000 e v - ill u minance (ix) i - photo c u rrent ( a) pce 19762 f = 1 mhz c ce0 - collector emitter capacitance (pf) v ce - collector emitter v oltage ( v ) 25 20 15 10 5 0 0.1 1.0 10.0 20019 0.0 0.1 0.2 0.3 0.4 0.5 300 400 500 600 700 8 00 900 1000 1100 - w a v elength (nm) s( ) rel - relati v e spectral sensiti v ity 0.6 0.7 0. 8 0.9 1.0 0.4 0.2 0 s rel - relati v e sensiti v ity 94 8 31 8 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 ? - ang u lar displacement
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81579 492 rev. 1.8, 26-mar-09 temt6000x01 vishay semiconductors ambient light sensor reflow solder profile fig. 8 - lead (pb)-free reflow solder profile acc. j-std-020d drypack devices are packed in moisture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. ea ch bag contains a desiccant. floor life time between soldering and removing from mbb must not exceed the time indicated in j-std-020: moisture sensitivity: level 3 floor life: 168 h conditions: t amb < 30 c, rh < 60 % drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry using recommended conditions: 192 h at 40 c (+ 5 c), rh < 5 % or 96 h at 60 c (+ 5 c), rh < 5 %. package dimensions in millimeters 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperat u re (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp u p 3 c/s max. ramp do w n 6 c/s 19 8 41 255 c 1 8 464
document number: 81579 for technical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.8, 26-mar-09 493 temt6000x01 ambient light sensor vishay semiconductors blister tape dimensions in millimeters reel dimensions in millimeters volume: 3000 pcs/reel 20 8 76 20 8 74
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