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savantic semiconductor product specification silicon pnp power transistors 2SA1250 description with to-66 package excellent safe operating area high breadown voltage applications for general-purpose amplifier ; and switching applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -200 v v ceo collector-emitter voltage open base -200 v v ebo emitter-base voltage open collector -7 v i c collector current -8 a p d total power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1250 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ;i b =0 -200 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -7 v v cesat collector-emitter saturation voltage i c =-5a; i b =-0.5a -1.5 v v besat base-emitter saturation voltage i c =-5a; i b =-0.5a -2.0 v i cbo collector cut-off current v cb =200v; i e =0 -10 a i ebo emitter cut-off current v eb =-7v; i c =0 -10 a h fe-1 dc current gain i c =-2a ; v ce =-1v 40 200 h fe-2 dc current gain i c =-5a ; v ce =-1v 20 savantic semiconductor product specification 3 silicon pnp power transistors 2SA1250 package outline fig.2 outline dimensions |
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