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| inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD833 description high dc current gain- : h fe = 4000(min) @i c = 3a low collector saturation voltage- : v ce(sat) = 1.5v(max.) @ i c = 3a applications audio power amplifiers relay& solenoid drivers motor controls general purpose power amplifiers absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo(sus) collector-emitter voltage 50 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 5 v i c collector current-continuous 7 a i b b base current-continuous 0.2 a p c collector power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 3.0 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD833 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a; i b = 0 50 v v (br)ceo collector-emitter breakdown voltage i c = 0.1ma; i b = 0 b 60 v v (br)cbo collector-base breakdown voltage i c = 0.1ma; i e = 0 60 v v (br)ebo emitter-base breakdown voltage i e = 3ma; i c = 0 5 v v ce( sat ) collector-emitter saturation voltage i c = 3a; i b = 6ma b 1.5 v v be( sat ) base-emitter saturation voltage i c = 3a; i b = 6ma b 2.5 v i cbo collector cutoff current v cb = 60v; i e =0 0.1 ma i ebo emitter cutoff current v eb = 5v; i c =0 3.0 ma h fe dc current gain i c = 3a; v ce = 3v 4000 isc website www.iscsemi.cn 2 |
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