? semiconductor components industries, llc, 2010 december, 2010 ? rev. 8 publication order number: umz1nt1/d UMZ1NT1G complementary dual general purpose amplifier transistor pnp and npn surface mount features ? high voltage and high current: v ceo = 50 v, i c = 200 ma ? high h fe : h fe = 200 400 ? moisture sensitivity level: 1 ? esd rating ? human body model: 3a esd rating ? machine model: c ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c) rating symbol value unit collector ? base voltage v (br)cbo 60 vdc collector ? emitter voltage v (br)ceo 50 vdc emitter ? base voltage v (br)ebo 7.0 vdc collector current ? continuous i c 200 madc thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 187 (note 1) 256 (note 2) 1.5 (note 1) 2.0 (note 2) mw mw/ c thermal resistance, junction-to-ambient r ja 670 (note 1) 490 (note 2) c/w characteristic (both junctions heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 250 (note 1) 385 (note 2) 2.0 (note 1) 3.0 (note 2) mw mw/ c thermal resistance, junction-to-ambient r ja 493 (note 1) 325 (note 2) c/w thermal resistance, junction-to-lead r jl 188 (note 1) 208 (note 2) c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 4 @ minimum pad 2. fr ? 4 @ 1.0 x 1.0 inch pad sc ? 88 case 419b marking diagram 1 3z = device code m = date code = pb ? free package device * package shipping ? ordering information *the ?t1? suffix refers to a 7 inch reel. q 1 (4) (5) (6) (1) (2) (3) q 2 3z m 1 UMZ1NT1G sc ? 88 (pb ? free) 3000 / tape & reel (note: microdot may be in either location) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. http://onsemi.com
UMZ1NT1G http://onsemi.com 2 q1: npn electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit collector ? emitter breakdown voltage (i c = 2.0 madc, i b = 0) v (br)ceo 50 ? ? vdc collector ? base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 60 ? ? vdc emitter ? base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 7.0 ? ? vdc collector ? base cutoff current (v cb = 45 vdc, i e = 0) i cbo ? ? 0.1 adc collector ? emitter cutoff current (v ce = 10 vdc, i b = 0) (v ce = 30 vdc, i b = 0) (v ce = 30 vdc, i b = 0, t a = 80 c) i ceo ? ? ? ? ? ? 0.1 2.0 1.0 adc adc madc dc current gain (note 3) (v ce = 6.0 vdc, i c = 2.0 madc) h fe 200 ? 400 ? collector ? emitter saturation voltage (i c = 100 madc, i b = 10 madc) v ce(sat) ? ? 0.25 vdc transistor frequency f t ? 114 ? mhz 3. pulse test: pulse width 300 s, d.c. 2%. q2: pnp electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit collector ? emitter breakdown voltage (i c = 2.0 madc, i b = 0) v (br)ceo ? 50 ? ? vdc collector ? base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo ? 60 ? ? vdc emitter ? base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo ? 7.0 ? ? vdc collector ? base cutoff current (v cb = 45 vdc, i e = 0) i cbo ? ? ? 0.1 adc collector ? emitter cutoff current (v ce = 10 vdc, i b = 0) (v ce = 30 vdc, i b = 0) (v ce = 30 vdc, i b = 0, t a = 80 c) i ceo ? ? ? ? ? ? ? 0.1 ? 2.0 ? 1.0 adc adc madc dc current gain (note 3) (v ce = 6.0 vdc, i c = 2.0 madc) h fe 200 ? 400 ? collector ? emitter saturation voltage (i c = 100 madc, i b = 10 madc) v ce(sat) ? ? ? 0.3 vdc transistor frequency f t ? 142 ? mhz
UMZ1NT1G http://onsemi.com 3 typical electrical characteristics: pnp transistor figure 1. collector saturation region 0 ? 1 ? 2 ? 3 ? 4 ? 6 ? 5 ? 200 0 ? 40 i c , collector current (ma) v ce , collector ? emitter voltage (v) ? 80 ? 120 ? 160 figure 2. dc current gain ? 1 ? 10 ? 100 ? 1000 1000 10 h fe , dc current gain i c , collector current (ma) 100 t a = 25 c ? 2.0 ma ? 1.5 ma ? 1.0 ma ? 0.5 ma i b = ? 0.2 ma v ce = ? 1.0 v t a = 100 c ? 25 c 25 c figure 3. dc current gain ? 1 ? 10 ? 1000 ? 100 1000 10 h fe , dc current gain i c , collector current (ma) 100 figure 4. v ce(sat) versus i c ? 1 ? 10 ? 100 ? 1000 ? 1 ? 0.01 v ce(sat) , maximum collector voltage (v) i c , collector current (ma) ? 0.1 i c /i b = 10 t a = 100 c ? 25 c 25 c t a = 100 c ? 25 c 25 c figure 5. v be ( sat ) versus i c ? 1 ? 10 ? 1000 ? 100 ? 10 ? 0.1 base ? emitter saturation voltage (v) i c , collector current (ma) ? 1 figure 6. base ? emitter voltage 0 ? 0.1 ? 10,000 i b , base current ( a) v be , base ? emitter voltage (v) ? 0.1 common emitter v ce = 6 v t a = 100 c ? 25 c 25 c t a = 25 c i c /i b = 10 ? 1 ? 10 ? 100 ? 1000 ? 0.2 ? 0.3 ? 0.4 ? 0.5 ? 0.6 ? 0.7 ? 0.8 ? 0.9 ? 1 v ce = ? 6.0 v
UMZ1NT1G http://onsemi.com 4 typical electrical characteristics: npn transistor figure 7. collector saturation voltage 01 2 3 4 6 5 280 0 40 i c , collector current (ma) v ce , collector ? emitter voltage (v) 80 120 160 figure 8. dc current gain 1 10 100 1000 1000 10 h fe , dc current gain i c , collector current (ma) 100 t a = 25 c 6.0 ma 1.0 ma i b = 0.2 ma v ce = 1.0 v t a = 100 c ? 25 c 25 c figure 9. dc current gain 1 10 1000 100 1000 10 h fe , dc current gain i c , collector current (ma) 100 figure 10. v ce(sat) versus i c 1 10 100 1000 1 0.01 v ce(sat) , maximum collector voltage (v) i c , collector current (ma) 0.1 i c /i b = 10 t a = 100 c ? 25 c 25 c t a = 100 c ? 25 c 25 c figure 11. v be ( sat ) versus i c 1 10 1000 100 10 0.1 base ? emitter saturation voltage (v) i c , collector current (ma) 1 figure 12. base ? emitter voltage 0 0.1 10,000 i b , base current ( a) v be , base ? emitter voltage (v) 0.1 common emitter v ce = 6 v t a = 100 c ? 25 c 25 c t a = 25 c i c /i b = 10 1 10 100 1000 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 5.0 ma 3.0 ma 200 240 2.0 ma 0.5 ma v ce = 6.0 v
UMZ1NT1G http://onsemi.com 5 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl sc ? 88/sc70 ? 6/sot ? 363 case 419b ? 02 issue w dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 umz1nt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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