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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD1709 description high breakdown voltage- : v cbo = 1500v (min) high switching speed built-in damper diode applications color tv horizontal deflection output color display horizontal deflection output absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 6 v i c collector current- continuous 5 a i cp collector current-pulse 16 a p c collector power dissipation @ t c =25 100 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1709 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 800 v v ce (sat) collector-emitter saturation voltage i c = 4.5a; i b = 2a 5.0 v v be (sat) base-emitter saturation voltage i c = 4.5a; i b = 2a 1.5 v i cbo collector cutoff current v cb = 800v ; i e = 0 10 a i ebo emitter cutoff current v eb = 4v ; i c = 0 40 130 ma h fe-1 dc current gain i c = 0.5a ; v ce = 5v 8 t f fall time i c = 4a , i b1 = 0.8a ; i b2 = -1.6a p w =20 s; duty cycle 1% 0.5 s isc website www.iscsemi.cn 2 |
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