sep.2000 h d b s v u k j t r g f l p c a aa m aa m m p n gup eup gun eun u gvp evp v gvn evn gwp ewp w gwn ewn p n p p n n uvw g u pg v pg w p g u ng v ng w n e u pe v pe w p e u ne v ne w n xxx tab #110, t = 0.5 qq n z - m5 thd (7 typ.) y - dia. (4 typ.) e m dimensions inches millimeters a 4.21 107.0 b 4.02 102.0 c 3.54 0.01 90.0 0.25 d 3.15 0.01 80.0 0.25 e 2.01 51.0 f 1.38 35.0 g 1.28 32.5 h 1.26 max. 32.0 max j 1.18 30.0 k 0.98 25.0 l 0.96 24.5 m 0.79 20.0 n 0.67 17.0 description: mitsubishi igbt modules are de- signed for use in switching applica- tions. each module consists of six igbts in a three phase bridge con- figuration, with each transistor hav- ing a reverse-connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified sys- tem assembly and thermal man- agement. features: u low drive power u low v ce(sat) u discrete super-fast recovery free-wheel diode u high frequency operation u isolated baseplate for easy heat sinking applications: u ac motor control u motion/servo control u ups u welding power supplies ordering information: example: select the complete part module number you desire from the table below -i.e. CM75TF-28H is a 1400v (v ces ), 75 ampere six-igbt module. type current rating v ces amperes volts (x 50) cm 75 28 dimensions inches millimeters p 0.57 14.5 q 0.55 14.0 r 0.47 12.0 s 0.43 11.0 t 0.39 10.0 u 0.33 8.5 v 0.30 7.5 x 0.24 6.0 y 0.22 5.5 z m5 metric m5 aa 0.08 2.0 mitsubishi igbt modules CM75TF-28H high power switching use insulated type outline drawing and circuit diagram
sep.2000 absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units junction temperature t j C40 to 150 c storage temperature t stg C40 to 125 c collector-emitter voltage (g-e-short) v ces 1400 volts gate-emitter voltage (c-e-short) v ges 20 volts collector current (t c = 25 c) i c 75 amperes peak collector current i cm 150* amperes emitter current** (t c = 25 c) i e 75 amperes peak emitter current** i em 150* amperes maximum collector dissipation (t c = 25 c, t j 150 c) p c 600 watts mounting torque, m5 main terminal C 1.47 ~ 1.96 n m mounting torque, m5 mounting C 1.47 ~ 1.96 n m weight C 830 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms *pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v C C 0.5 m a gate-emitter threshold voltage v ge(th) i c = 7.5ma, v ce = 10v 5.0 6.5 8.0 volts collector-emitter saturation voltage v ce(sat) i c = 75a, v ge = 15v C 3.1 4.2** volts i c = 75a, v ge = 15v, t j = 150 c C 2.95 C volts total gate charge q g v cc = 800v, i c = 75a, v ge = 15v C 383 C nc emitter-collector voltage v ec i e = 75a, v ge = 0v C C 3.8 volts ** pulse width and repetition rate should be such that device junction temperature rise is negligible. dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies C C 15 nf output capacitance c oes v ge = 0v, v ce = 10v C C 5.3 nf reverse transfer capacitance c res C C 3 nf resistive turn-on delay time t d(on) C C 150 ns load rise time t r v cc = 800v, i c = 75a, C C 350 ns switching turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 4.2 w C C 250 ns times fall time t f C C 500 ns diode reverse recovery time t rr i e = 75a, di e /dt = C150a/ m s C C 300 ns diode reverse recovery charge q rr i e = 75a, di e /dt = C150a/ m s C 0.75 C m c thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) per igbt C C 0.21 c/w thermal resistance, junction to case r th(j-c) per fwdi C C 0.47 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C C 0.025 c/w mitsubishi igbt modules CM75TF-28H high power switching use insulated type
sep.2000 mitsubishi igbt modules CM75TF-28H high power switching use insulated type gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 048121620 120 90 60 30 0 v ce = 10v t j = 25 c t j = 125 c 150 collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246810 90 30 0 v ge = 20v 15 14 13 12 8 t j = 25 o c 60 120 150 10 11 9 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 10 -1 10 -2 v ge = 0v 10 1 c ies c oes c res gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 048121620 8 6 4 2 0 t j = 25 c i c = 30a i c = 150a i c = 75a collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 5 0 30 60 90 120 4 3 2 1 0 150 v ge = 15v t j = 25 c t j = 125 c gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 150 300 16 12 8 4 0 450 600 v cc = 800v v cc = 600v i c = 75a emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 0 10 1 10 2 10 2 10 1 t rr i rr di/dt = -150a/ m sec t j = 25 c 10 1 10 0 10 -1 reverse recovery current, i rr , (amperes) switching time, (ns) half-bridge switching characteristics (typical) collector current, i c , (amperes) 10 4 10 1 10 2 10 3 10 3 10 2 10 1 t d(off) t d(on) t r v cc = 800v v ge = 15v r g = 4.2 w t j = 125 c t f 0 1.0 2.0 1.5 2.5 3.5 3.0 4.0 10 0 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 3 emitter current, i e , (amperes) 10 1 t j = 25 c
sep.2000 mitsubishi igbt modules CM75TF-28H high power switching use insulated type time, (s) normalized transient thermal impedance, z th(j-c) z th = r th ?(normalized value) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.47 c/w 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) z th = r th ?(normalized value) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.21 c/w 10 -1 10 -2 10 -3
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