npn power transistors these devices are high voltage, high speed transistors for horizontal deflection output stages of tv's and crt's. ? high voltage: v cev = 330 or 400 v ? fast switching speed: t f = 750 ns (max) ? low saturation voltage: v ce(sat) = 1 v (max) @ 5 a ? packaged in compact jedec to220ab ??????????????????????? ??????????????????????? maximum ratings ??????????? ??????????? rating ????? ????? symbol ???? ???? bu406 ???? ???? bu407 ??? ??? unit ??????????? ??????????? collectoremitter voltage ????? ????? v ceo ???? ???? 200 ???? ???? 150 ??? ??? vdc ??????????? ??????????? collectoremitter voltage ????? ????? v cev ???? ???? 400 ???? ???? 330 ??? ??? vdc ??????????? ??????????? collectorbase voltage ????? ????? v cbo ???? ???? 400 ???? ???? 330 ??? ??? vdc ??????????? ??????????? emitter base voltage ????? ????? v ebo ??????? ??????? 6 ??? ??? vdc ??????????? ? ????????? ? ??????????? collector current e continuous peak repetitive peak (10 ms) ????? ? ??? ? ????? i c ??????? ? ????? ? ??????? 7 10 15 ??? ? ? ? ??? adc ??????????? ??????????? base current ????? ????? i b ??????? ??????? 4 ??? ??? adc ??????????? ? ????????? ? ??????????? total device dissipation, t c = 25 c derate above t c = 25 c ????? ? ??? ? ????? p d ??????? ? ????? ? ??????? 60 0.48 ??? ? ? ? ??? watts w/ c ??????????? ??????????? operating and storage junction temperature range ????? ????? t j , t stg ??????? ??????? 65 to 150 ??? ??? c ??????????????????????? ? ????????????????????? ? ??????????????????????? thermal characteristics ???????????? ???????????? characteristic ????? ????? symbol ?????? ?????? max ??? ??? unit ???????????? ???????????? thermal resistance, junction to case ????? ????? r q jc ?????? ?????? 2.08 ??? ??? c/w ???????????? ???????????? thermal resistance, junction to ambient ????? ????? r q ja ?????? ?????? 70 ??? ??? c/w ???????????? ???????????? lead temperature for soldering purposes: 1/8 from case for 5 seconds ????? ????? t l ?????? ?????? 275 ??? ??? c on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 4 1 publication order number: bu406/d bu406 bu407 7 amperes npn silicon power transistors 60 watts 150 and 200 volts case 221a09 to220ab
bu406 bu407 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (1) bu406 (i c = 100 madc, i b = 0) bu407 ????? ? ??? ? ????? v ceo(sus) ???? ? ?? ? ???? 200 150 ??? ? ? ? ??? e e ???? ? ?? ? ???? e e ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collector cutoff current (v ce = rated v cev , v be = 0) (v ce = rated v ceo + 50 vdc, v be = 0) (v ce = rated v ceo + 50 vdc, v be = 0, t c = 150 c) ????? ? ??? ? ? ??? ? ????? i ces ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 5 0.1 1 ??? ? ? ? ? ? ? ??? madc ??????????????????? ? ????????????????? ? ??????????????????? emitter cutoff current bu406, bu407 (v eb = 6 vdc, i c = 0) ????? ? ??? ? ????? i ebo ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 1 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ??????????????????? ??????????????????? collectoremitter saturation voltage (i c = 5 adc, i b = 0.5 adc) ????? ????? v ce(sat) ???? ???? e ??? ??? e ???? ???? 1 ??? ??? vdc ??????????????????? ??????????????????? baseemitter saturation voltage (i c = 5 adc, i b = 0.5 adc) ????? ????? v be(sat) ???? ???? e ??? ??? e ???? ???? 1.2 ??? ??? vdc ??????????????????? ??????????????????? forward diode voltage (i ec = 5 adc) ado only ????? ????? v ec ???? ???? e ??? ??? e ???? ???? 2 ??? ??? volts ????????????????????????????????? dynamic characteristics ??????????????????? ? ????????????????? ? ??????????????????? currentgain e bandwidth product (i c = 0.5 adc, v ce = 10 vdc, f test = 20 mhz) ????? ? ??? ? ????? f t ???? ? ?? ? ???? 10 ??? ? ? ? ??? e ???? ? ?? ? ???? e ??? ? ? ? ??? mhz ??????????????????? ? ????????????????? ? ??????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 1 mhz) ????? ? ??? ? ????? c ob ???? ? ?? ? ???? e ??? ? ? ? ??? 80 ???? ? ?? ? ???? e ??? ? ? ? ??? pf ????????????????????????????????? ????????????????????????????????? switching characteristics ??????????????????? ? ????????????????? ? ??????????????????? inductive load crossover time (v cc = 40 vdc, i c = 5 adc, i b1 = i b2 = 0.5 adc, l = 150 m h) ????? ? ??? ? ????? t c ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 0.75 ??? ? ? ? ??? m s (1) pulse test: pulse width 300 m s, duty cycle 1%. 100 0.1 figure 1. dc current gain i c , collector current (amps) 10 0.2 0.3 0.5 0.7 1 5 7 10 50 20 70 30 h fe , dc current gain t j = 100 c 25 c 23 v ce = 5 v 10 2 v ce , collector-emitter voltage (volts) 1 720 bonding wire limit thermal limit second breakdown limit i c , collector current (amp) 3 5 30 50 70 200 0.1 10 t c = 25 c figure 2. maximum rated forward bias safe operating area 100 bu407 bu406 dc
bu406 bu407 http://onsemi.com 3 package dimensions case 221a09 issue aa to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j
bu406 bu407 http://onsemi.com 4 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bu406/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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