maximum ratings per transistor (t a =25c) symbol units collector-emitter voltage v ceo 50 v collector-base voltage v cbo 50 v emitter-base voltage v ebo 5.0 v collector current i c 100 ma power dissipation p d 350 mw operating and storage junction temperature t j ,t stg -55 to +150 c thermal resistance ja 357 c/w electrical characteristics per transistor (t a =25c) symbol test conditions min typ max units i cbo v cb =50v 500 na i ebo v eb =4.0v 500 na bv cbo i c =50 a50v bv ceo i c =1.0ma 50 v bv ebo i e =50a 5.0 v v ce(sat) i c =5.0ma, i b =250 a 0.3 v h fe v ce =5.0v, i c =1.0ma 100 600 * f t v ce =10v, i c =5.0ma, f=100mhz 250 mhz r 1 =r 2 - 3.3 4.7 6.1 k ? * characteristic of transistor only CIMD6A dual complementary digital transistor 50v, 100ma sot-26 case central semiconductor corp. tm r0 (20-february 2002) description: the central semiconductor CIMD6A is a dual complementary digital transistor in a sot-26 surface mount package, designed for switching applications, interface circuit and driver circuit applications. marking code is cd6.
6 5 4 1 2 3 a b c g e f j i h d r2 central semiconductor corp. tm sot-26 case - mechanical outline CIMD6A dual complementary digital transistor 50v, 100ma r0 (20-february 2002) lead code: 1) collector q1 2) base q2 3) emitter q2 4) collector q2 5) base q1 6) emitter q1 6 5 4 1 2 3 r1 r2 q2 q1
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