? 1999 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 200 v v dgr t j = 25 c to 150 c; r gs = 1 m w 200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c58a i dm t c = 25 c, pulse width limited by t jm 232 a i ar t c = 25 c58a e ar t c = 25 c30mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ m s, v dd v dss , 5 v/ns t j 150 c, r g = 2 w p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g to-247 ad g = gate d = drain s = source tab = drain (tab) 98523a (5/99) symbol t est conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 m a 200 v v gs(th) v ds = v gs , i d = 4 ma 2.0 4.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c25 m a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 40 m w pulse test, t 300 m s, duty cycle d 2 % preliminary data sheet to-268 (d3) (ixft) case style (tab) g s hiperfet tm power mosfets q-class n-channel enhancement mode avalanche rated high dv/dt, low q g features l ixys advanced low q g process l international standard packages l low gate charge and capacitance - easier to drive - faster switching l low r ds (on) l unclamped inductive switching (uis) rated l molding epoxies meet ul 94 v-0 flammability classification advantages l easy to mount l space savings l high power density ixfh 58n20q ixft 58n20q v dss = 200 v i d25 =58a r ds(on) = 40 m w t rr 200 ns
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , pulse test 24 34 s c iss 3600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 870 pf c rss 280 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 40 ns t d(off) r g = 1.5 w (external) 40 ns t f 13 ns q g(on) 98 140 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 25 35 nc q gd 45 70 nc r thjc 0.42 k/w r thck (to-247) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 58 a i sm repetitive; 232 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 m s, duty cycle d 2 % t rr 200 ns q rm i f = i s -di/dt = 100 a/ m s, v r = 100 v 0.7 m c i rm 7a dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-247 ad outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 ixfh 58n20q ixft 58n20q to-268 outline min. recommended footprint dimensions in mm and inches
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