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mil - prf - 19500/397g 1 april 2002 superseding mil - prf - 19500/397f 21 april 2000 performance specification semicon ductor device, transistor, pnp, silicon types 2n3743, 2n4930, and 2n4931 jan, jantx, jantxv, jans, janhc, and jankc this specification is approved for use by all departments and agencies of the department of defense. 1. scope 1.1 scope . this specif ication covers the performance requirements for pnp, silicon, high - voltage transistor. four levels of product assurance are provided for each device type as specified in mil - prf - 19500. two levels of product assurance for die are provided for each unencaps ulated device type as specified in mil - prf - 19500 * 1.2 physical dimensions . see figure 1 (to - 39) and figures 2 and 3 for janhc and jankc (die) dimensions. 1.3 maximum ratings . type p t (1) t a = +25 c p t (2) t c = +25 c v cbo v ebo v ceo i c t j and t stg w w v dc v dc v dc ma dc c 2n3743 1.0 5 300 5 300 200 - 65 to +200 2n4930 1.0 5 200 5 200 200 - 65 to +200 2n4931 1.0 5 250 5 250 200 - 65 to +200 (1) derate linearly at 5.71 mw/ c above t a > +25 c. (2) derate linearly at 28.6 mw/ c abo ve t c > +25 c. amsc n/a fsc 5961 distribution statement a . approved for public release; distribution is un limited. inch - pound the documentation and process conversion measures necessary to comply with this revision shall be completed by 1 july 2002. beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: commander, defense supply center columbus, attn: dscc - vac, post office box 3990, columbus, oh 43216 - 5000, by using the standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter.
mil - prf - 19500/397g 2 1.4 primary electrical characteristics at t a = +25 c . limits |h fe | h fe1 (1) h fe4 (1) v be(sat)2 (1) v ce(sat)1 (1) c obo i c = 10 ma dc i c = 0.1 ma dc i c = 30 ma dc i c = 30 ma dc i c = 30 ma dc i e = 0 v ce = 20 v dc v ce = 10 v dc v ce = 10 v dc i b = 3 ma dc i b = 3 ma dc v cb = 20 v dc f = 20 mhz f 3 0.1 mhz v dc v dc pf min 2.0 30 50 max 8.0 200 1.2 1.2 15 (1) pulsed (see 4.5.1). 2. applicable documents 2.1 general . the documents listed in this section are spec ified in sections 3 and 4 of this specification. this section does not include documents cited in other sections of this specification or recommended for additional information or as examples. while every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents . 2.2.1 specifications, standards and handbooks . the following specifications, standards and handbooks form a part of this document to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specificati ons and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil - prf - 19500 - semiconductor devices, general specification for. standard department of defense mil - std - 750 - test metho ds for semiconductor devices. (unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the document automation and production services (daps), building 4d (dpm - dodssp), 700 robbins avenue, philadelphia, pa 19111 - 5094.) 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
mil - prf - 19500/397g 3 dimensions symbol inches millimeters note min max min max cd .305 .335 7.75 8.51 ch .240 .260 6.12 6.60 hd . 335 .370 8.51 9.40 lc .200 tp 5.08 tp 7 ld .016 .019 0.41 0.48 8,9 ll 0.500 0.750 12.7 19.0 lu .016 .019 0.41 0.48 8,9 l1 .050 1.27 8,9 l2 .250 6.35 8,9 p .100 2.54 6 q .030 0.76 5 tl .029 .045 0.74 1.14 3,4 tw .028 .034 0.71 0.86 3, 4 r .010 0.25 a 45 tp 45 tp notes: 1. dimension are in inches. 2. metric equivalents are given for general information only. 3. beyond r (radius) maximum, tw shall be held for a minimum length of .011 (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. cd shall not vary more than .010 inch (0.25 mm) in zone p. this zone is controlled for automatic handling. 7. leads at gauge plane .054 +.001 - .000 inch (1.37 +0.03 - 0.0 0 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods or by the gauge and gauging procedure. 8. dimension lu app lies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. diameter is uncontrolled in l 1 and beyond ll minimum. 9. all three leads. 10. the collector shall be internally connected to the case. 11. dimension r (radius) applies to both i nside corners of tab. 12. in accordance with ansi y14.5m, diameters are equivalent to f x symbology. 13. lead 1 = emitter, lead 2 = base, lead 3 = collector. figure 1. physical dimensions (to - 39) .
mil - prf - 19500/397g 4 letter dimensions i nches millimeters min max min max a .041 .041 1.04 1.04 c .041 .041 1.04 1.04 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. the physical characteristics of the die are: thickness: .006 inch (0.15 mm) to .012 inch (0.30 mm). top metal: aluminum 17,500 ? minimum, 20,000 ? nominal. back metal: gold 2,500 ? minimum, 3,000 ? nominal. back side: collector. bonding pad: b = .004 inch (0.10 mm) x .005 inch (0.13 mm). e = .004 inch (0.10 mm) x .0055 inch (0.14 mm). figure 2. janhc and jankc (a - version) die dimensions .
mil - prf - 19500/397g 5 1. chip size: 40 x 40 mils 1 mil. 2. chip thickness: 10 1.5 mil. 3. top metal: aluminum 15,000 ? minimum, 18,000 ? nominal. 4. back metal: a. al/ti/ni/ag 12k ? /3k ? /7 k ? /7k ? min.,15k ? /5k ? /10k ? /10k ? nom. b. gold 2,500 ? minimum, 3,000 ? nominal. c. eutectic mount ? no gold. 5. backside: collector 6. bonding pad: b = 6 x 8 mils, e = 6 x 4 mils. figure 3. janhc and jankc (b - version) die dimensions .
mil - prf - 19500/397g 6 3. requ irements 3.1 general . the requirements for acquiring the product described herein shall consist of this document and mil - prf - 19500. 3.2 qualification . devices furnished under this specification shall be products that are manufactured by a manufactur er authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (qml) before contract award (see 4.2 and 6.3). 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil - prf - 19500. 3.4 interface and physical dimensions . interface and physical dimensions shall be as specified in mil - prf - 19500, and on figure 1 (to - 39) and figures 2 and 3 for janhc and jankc (die) herein. 3.4.1 lead finish . lead fin ish shall be solderable in accordance with mil - prf - 19500, mil - std - 750, and herein. where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 marking . marking shall be in accordance with mil - prf - 19500. 3.6 electrical performance characteristics . unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4 and table i. 3.7 electrical test requirements . the electrical test requirements shall be group a as specified herein. 3.8 marking . marking shall be in accordance with mil - prf - 19500, except for the ub suffix package. marking on the ub package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo. the prefixes jan, jantx, jantxv, and jans can be abbreviated as j, jx, jv, and js respectively. the "2n" prefix and the "ub" suffix can also be omitted. 3.9 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. verification 4.1 classification of inspections . the inspection requirements specified herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4). 4.2 qualification inspection . qualification inspection shall be in accordance with mil - prf - 19500 and table ii herein. * 4.2.1 janhc and jankc qualification . janhc and jankc qualification i nspection shall be in accordance with mil - prf - 19500. * 4.2. 2 group e qualification . group e qualification shall be performed herein for qualification or requalification only. in case qualification was awarded to a prior revision of the associated speci fication that did not request the performance of table ii tests, the tests specified in table ii herein shall be performed by the first inspection lot to this revision to maintain qualification.
mil - prf - 19500/397g 7 * 4.3 screening (jans, jantx, and jantxv levels only) . sc reening shall be in accordance with table iv of mil - prf - 19500, and as specified herein. the following measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. screen (see ta ble iv of mil - prf - 19500) measurement jans level jantx and jantxv levels 3c thermal impedance, method 3131 of mil - std - 750. thermal impedance, method 3131 of mil - std - 750. 9 i cbo1 not applicable 11 i cbo1 and h fe4 i cbo1 and h fe4 d i cbo = 10 0 percent of initial value or 50 na dc, whichever is greater 12 see 4.3.1 see 4.3.1 13 subgroups 2 and 3 of table i herein; subgroup 2 of table i herein; d i cbo1 = 100 percent of initial d i cbo1 = 100 percent of initial value or 50 na dc, whiche ver is greater; d h fe4 = 15 percent value or 50 na dc, whichever is greater; d h fe4 = 20 percent * 4.3.1 power burn - in conditions . power burn - in conditions are as follows: v cb 3 30 v dc, t a = +30 c 5 c. note: no heatsink or forced air cooling on th e devices shall be permitted. p t adjusted to achieve t j of +175 c minimum. * 4.3.2 screening (janhc and jankc) . screening of janhc and jankc die shall be in accordance with mil - prf - 19500, ?discrete semiconductor die/chip lot acceptance?. burn - in durat ion for the jankc level follows jans requirements; the janhc follows jantx requirements. 4.4 conformance inspection . conformance inspection shall be in accordance with mil - prf - 19500 and as specified herein. 4.4.1 group a inspection . group a inspecti on shall be conducted in accordance with mil - prf - 19500, and table i herein. electrical measurements (end - points) shall be in accordance with the applicable inspections of table i, subgroup 2 herein. 4.4.2 group b inspection . group b inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables via (jans) and vib (jan, jantx, and jantxv) of mil - prf - 19500 and 4.4.2.1 and 4.4.2.2 herein. electrical measurements (end - points) shall be in accordance with the applica ble inspections of table i, subgroup 2 herein.
mil - prf - 19500/397g 8 * 4.4.2.1 group b inspection, table via (jans) of mil - prf - 19500 . subgroup method condition b4 1037 v ce = 30 v dc, 2,000 cycles. b5 1027 (note: if a failure occurs, resubmission shall be at the test conditions of the original sample). v cb = 10 v dc; p d 3 100 percent of maximum rated p t (see 1.3). option 1: 96 hours minimum, sample size in accordance with table via of mil - prf - 19500, adjust t a or p d to achieve t j = +275 c minimum. option 2: 216 ho urs, sample size = 45, c = 0; adjust t a or p d to achieve t j = +225 c minimum. 4.4.2.2 group b inspection, (jan, jantx, and jantxv) . 1 / step method condition 1 1039 steady - state life: test condition b, 340 hours, v cb = 10 to 30 v dc, t j = 175 c min. no heat sink shall be permitted. n = 45 devices, c = 0. 2 1039 the steady - state life test of step 1 shall be extended to 1,000 hours for each die design. samples shall be selected from a wafer lot every twelve months of wafer production, howev er, group b shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 high - temperature life (non - operating), t a = +200 c. n = 22, c = 0. 4.4.2.3 group b sample selection . samples selected from group b inspection shall meet all of the following requirements: a. for jan, jantx, and jantxv samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. for jans, samples shall be selected from each inspection lot. see mil - prf - 19500. b. must be chosen from an inspection lot that has been submitted to and passed group a, subgroup 2, conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (s ubgroups b4 and b5 for jans, and group b for jan, jantx, and jantxv) may be pulled prior to the application of final lead finish. 4.4.3 group c inspection, group c inspection shall be conducted in accordance with the conditions specified for subgroup te sting in table vii of mil - prf - 19500 and in 4.4.3.1 (jans).and 4.4.3.2 (jan, jantx, and jantxv) herein for group c testing. electrical measurements (end - points) shall be in accordance with group a, subgroup 2. __________ 1 / separate samples may be used for each step. in the event of a group b failure, the manufacturer may double the sample size from either the failed assembly lot or from another assembly lot from the same wafer lot. if the new ?assembly lot? option is exercised, the failed assembly lo t shall be scrapped.
mil - prf - 19500/397g 9 4.4.3.1 group c inspection, table vii (jans) of mil - prf - 19500 . subgroup method condition c2 2036 test condition e. c6 1026 v cb = 10 to 30 v dc; t j = + 175 c minimum. no heat sink or forced - air cooling on the devices shall be permitted. * 4.4.3.2 group c inspection, table vii (jan, jantx, and jantxv) of mil - prf - 19500 . subgroup method condition c2 2036 test condition e. c5 3131 see 4.5.2. c6 not applicable 4.4.3.3 group c sample selection . samples for subgroups in group c shall be chosen at random from any lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group a tests for conformance inspection. testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. * 4.4.4 group e inspection . group e inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix e, table ix of mil - prf - 19500 and as specified herein. electrical measurements (end - points) shall be in accordance with table i, subgroup 2 herein. 4.5 methods of ins pection . methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 pulse measurements . conditions for pulse measurement shall be as specified in section 4 of mil - std - 750. * 4.5.2. thermal resistance . thermal resist ance measurements shall be conducted in accordance with method 3131 of mil - std - 750. the limit of r q jc(max) shall be 35 c/w. a. i m measurement ................................ ................................ ........ 10 ma. b. v ce measurement voltage (same as v h ) ................................ . 25 v dc. c. i h collector heating current ................................ ....................... 0.2 a dc. d. v h collector - emitter heating voltage ................................ ......... 25 v dc. e. t h heating time ................................ ................................ ........ 1 second minimum. f. t md measurement delay time ................................ .................... 50 m s maximum. g. t sw sampling window time ................................ ........................ 10 m s maximum.
mil - prf - 19500/397g 10 table i. group a inspection . inspection 1 / mil - std - 750 symbol limit unit method conditions min max subgroup 1 2 / visual and mechanical examination 3 / 2071 n = 45 devices, c = 0 solderability 3 / 4 / 2026 n = 15 leads, c = 0 resistance to 3 / 4 / 5 / solvent 1022 n = 15 devices, c = 0 temp cycling 3 / 4 / 1051 test condition c, 25 cycles. n = 22 devices, c = 0 heremetic seal 4 / fine leak gross leak 1071 n = 22 devices, c = 0 electrical measurements 4 / group a, subgroup 2 bond strength 3 / 4 / 2037 preco ndition t a = +250 c at t = 24 hrs or t a = +300 c at t = 2 hrs, n = 11 wires, c = 0 subgroup 2 breakdown voltage, collector to base 3001 bias condition d, i c = 100 m a dc v (br)cbo 2n3743 2n4930 2n4931 300 200 250 v dc v dc v dc breakdown voltage, collector to emitter 3011 pulsed (see 4.5.1), bias condition d, i c = 1.0 ma dc v (br)ceo 2n3743 2n4930 2n4931 300 200 250 v dc v dc v dc breakdown voltage, emitter to base 3026 bias condition d, i e = 100 m a dc v ( br)ebo 5 v dc see footnotes at end of table.
mil - prf - 19500/397g 11 table i. group a inspection ? continued. inspection 1 / mil - std - 750 symbol limit unit method conditions min max subgroup 2 - continued collector to base cutoff current 3036 bi as condition d, i e = 0 i cbo1 250 na 2n3743 2n4930 2n4931 v cb = 250 v dc v cb = 150 v dc v cb = 200 v dc emitter to base cutoff current 3061 bias condition d, v eb = 4 v dc i ebo 150 na dc forward current transfer ratio 3076 pulsed (see 4 .5.1), i c = 0.1 ma dc, v ce = 10 v dc h fe1 30 forward current transfer ratio 3076 pulsed (see 4.5.1), i c = 1.0 ma dc, v ce = 10 v dc h fe2 40 forward current transfer ratio 3076 pulsed (see 4.5.1), i c = 10 ma dc, v ce = 10 v dc h fe3 40 forwar d current transfer ratio 3076 pulsed (see 4.5.1), i c = 30 ma dc, v ce = 10 v dc h fe4 50 200 forward current transfer ratio 3076 pulsed (see 4.5.1), i c = 50 ma dc, v ce = 20 v dc h fe5 30 collector to emitter voltage (saturated) 3071 pulsed (se e 4.5.1), i c = 30 ma dc, i b = 3 ma dc v ce(sat)1 1.2 v dc collector to emitter voltage (saturated) 3071 pulsed (see 4.5.1), i c = 10 ma dc, i b = 1 ma dc v ce(sat)2 1.0 v dc base emitter voltage (saturated) 3066 test condition a, i c = 10 ma dc, i b = 1 ma dc, pulsed (see 4.5.1) v be(sat)1 1.0 v dc base emitter voltage (saturated) 3066 test condition a, i c = 30 ma dc, i b = 3 ma dc, pulsed (see 4.5.1) v be(sat)2 1.2 v dc see footnotes at end of table.
mil - prf - 19500/397g 12 table i. group a inspection - continued. inspection 1 / mil - std - 750 symbol limit unit method conditions min max subgroup 3 high - temperature operation: t a = +125 c collector to base cutoff current 3036 bias condition d i cbo2 100 m a dc 2n3743 2n4930 2n4931 v cb = 250 v dc v cb = 150 v dc v cb = 200 v dc low - temperature operation: t a = - 55 c forward current transfer ratio 3076 pulsed (see 4.5.1), i c = 30 ma dc, v ce = 10 v dc h fe6 25 subgroup 4 open circuit (output capacita nce) 3236 v cb = 20 v dc, i e = 0, f 3 0.1 mhz c obo 15 pf input capacitance (output open circuited) 3240 v eb = 1 v dc, i c = 0, f 3 0.1 mhz c ibo 400 pf small - signal current gain 3306 v ce = 20 v dc, i c = 10 ma dc, f = 20 mhz |h fe | 2 8 small - signal current gain 3206 v ce = 10 v dc, i c = 10 ma dc, f = 1 khz h fe 30 300 subgroup 5 safe operating area (dc operation) 3051 t c = +25 c, t 3 1 second, 1 cycle test 1 i c = 50 ma dc, v ce = 20 v dc test 2 i c = 10 ma dc, v ce = 100 v dc test 3 2n3743 i c = 3.3 ma dc, v ce = 300 v dc 2n4930 i c = 5 ma dc, v ce = 200 v dc 2n4931 i c = 4 ma dc, v ce = 250 v dc electrical measurements see table i, group a, subgroup 2 herein 1 / for sampling plan, see mil - prf - 19500. 2 / for resubmission of failed subgroup a1, double the sample size of the failed test or sequence of tests. 3 / separate samples may be used. 4 / not required for jans. 5 / not required for laser marked devices.
mil - prf - 19500/397g 13 * table ii. group e inspection (all quality levels) ? for qualification only . inspection mil - std - 750 qualification method conditions subgroup 1 temperature cycling (air to air) 1051 test condition c, 500 cycles 45 devi ces c = 0 hermetic seal fine leak gross leak 1071 electrical measurements see group a, subgroup 2 herein. subgroup 2 intermittent life 1037 v cb = 10 v dc, 6,000 cycles. 45 devices c = 0 electrical measurements see g roup a, subgroup 2 herein. subgroup 3 and 4 not applicable subgroup 5 barometric pressure (2n3743 and 2n4931 only) 1001 pressure = 8 mmhg, normal mounting, t = 60 seconds minimum. 5 devices c = 0 subgroup 6 and 7 not applicable su bgroup 8 reverse stability 1033 condition a for devices 3 400 v condition b for devices < 400 v 45 devices c = 0
mil - prf - 19500/397g 14 5. packaging 5.1. packaging . for acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). when actual packaging of materiel is to be perfor med by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging activity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense agency's automated packaging files, cd - rom products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 intended use . the notes specified in mil - prf - 19500 are applicable to this specification. 6.2 acquisition req uirements . acquisition documents must specify the following: a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2.1). c. th e lead finish as specified (see 3.4.1). d. type designation and quality assurance level. e. packaging requirements (see 5.1). 6.3 qualification . with respect to products requiring qualification, awards will be made only for products which are, at the t ime of award of contract, qualified for inclusion in qualified manufacturers' list (qml) whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. information pertaining to qu alification of products may be obtained from defense supply center, columbus, attn: dscc/vqe, p.o. box 3990, columbus, oh 43216 - 5000. 6.4 substitution information . devices form this specification supersedes the following commercial part or identifyin g number (pin). this information in no way implies that manufacturers? pin?s are suitable as a substitute for the military pin. military pin superseded commercial types 2n3743 sun1446h, ss4238h 2n4930 sun1446h, ss5152h 2n4931 sun1446h, st1390h, st147h
mil - prf - 19500/397g 15 6.5 suppliers of janhc and jankc die . the qualified die suppliers with the applicable letter version (example, JANHCA2N3743) will be identified on the qualified manufacturer?s list. janc ordering information pin manufacturers 33178 43611 2n37 43 JANHCA2N3743, jankca2n3743 janhcb2n3743, jankcb2n3743 2n4930 janhca2n4930, jankca2n4930 janhcb2n4930, jankcb2n4930 2n4931 janhca2n4931, jankca2n4931 janhcb2n4931, jankcb2n4931 6.6 changes from previous issue . the margins of this revision are ma rked with an asterisk to indicate where changes from the previous issue were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notations. bidders and contractors are cautioned to ev aluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. custodians: preparing activity: army - cr dla - cc navy - ec air force - 11 (project 5961 - 256 0) nasa - na dla - cc review activities: army - ar, av, mi navy - as, mc air force ? 19, 71
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the d ocument number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a reply within 30 days from receipt of the form. note: this form may not be used to req uest copies of documents, nor to request waivers, or clarification of requirements on current contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual re quirements. i recommend a change: 1. document number mil - prf - 19500/397g 2. document date 1 april 2002 1. document title semiconductor device, transistor, pnp, silicon types 2n3743, 2n4930, and 2n4931 jan, jantx, jantxv, jans, janhc, and jankc 4. nature of change (identify paragraph number and include proposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614 - 692 - 0510 850 - 0510 614 - 692 - 6939 alan.barone@dscc.dla.mil c. address defense supply center columbus, attn: dscc - vac p.o. box 3990 columbus, oh 43216 - 5000 if you do not receive a reply within 45 days, contact: defense standar dization program office (dlsc - lm) 8725 john j. kingman, suite 2533 fort belvoir, va 22060 - 6221 telephone (703) 767 - 6888 dsn 427 - 6888 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

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