UG06A thru ug06d vishay semiconductors formerly general semiconductor document number 88757 www.vishay.com 14-feb-02 1 miniature ultrafast plastic rectifier 1.0 (25.4) min. 1.0 (25.4) min. 0.125 (3.18) 0.115 (2.92) 0.100 (2.54) 0.090 (2.29) 0.025 (0.635) 0.023 (0.584) dia dia. mpg06 maximum ratings & thermal characteristics ratings at 25? ambient temperature unless otherwise specified. parameters symbols UG06A ug06b ug06c ug06d units maximum repetitive peak reverse voltage v rrm 50 100 150 200 v maximum rms voltage v rms 35 70 105 140 v maximum dc blocking voltage v dc 50 100 150 200 v maximum average forward rectified current at 0.375 i f(av) 0.6 a (9.5mm) lead length at t l = 75? peak forward surge current 8.3 ms single half sine-wave i fsm 40 a superimposed on rated load (jedec method) at t l = 75? typical thermal resistance (1) r ja 97 ?/w r jl 28 operating junction and storage temperature range t j , t stg -55 to +150? ? electrical characteristics ratings at 25? ambient temperature unless otherwise specified. parameters symbols UG06A ug06b ug06c ug06d units maximum instantaneous forward voltage at 0.6a v f 0.95 v maximum dc reverse current t a = 25? i r 5.0 a at rated dc blocking voltage t a =100? 100 maximum reverse recovery time at i f =0.5a, i r =1.0a, i rr =0.25a t rr 15 ns maximum reverse recovery time t j = 25? t rr 25 ns i f =0.6a, v r =30v, di/dt=50a/ s, i rr =10% i rm t j = 100? 35 maximum recovered stored charge t j = 25? q rr 8.0 nc i f =0.6a, v r =30v, di/dt=50a/ s, i rr =10% i rm t j = 100? 20 typical junction capacitance at 4v, 1mhz c j 9.0 pf notes: (1) thermal resistance from junction to ambient and junction to lead at 0.375 (9.5mm) lead length p.c.b. mounted with 0.2 x 0.2 (5.0 x 5.0mm) copper pads (2) pulse test: 300 s pulse width, 1% duty cycle dimensions in inches and (millimeters) features ?plastic package has underwriters laboratories flammability classification 94v-0 ?ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes ?ultrafast recovery time for high efficiency ?excellent high temperature switching ?soft recovery characteristics ?glass passivated junction ?high temperature soldering guaranteed: 250?/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension mechanical data case: void free molded plastic body over glass passivated chip terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: 0.0064 oz., 0.181 g reverse voltage 50 to 200v forward current 0.6a
UG06A thru ug06d vishay semiconductors formerly general semiconductor www.vishay.com document number 88757 2 14-feb-02 ratings and characteristic curves (t a = 25? unless otherwise noted) temperature ( c) fig. 1 ? maximum forward current derating curves average forward rectified current (a) fig. 3 ? typical instantaneous forward characteristics instantaneous forward voltage (v) instantaneous forward current (a) percent of rated peak reverse voltage (%) instantaneous reverse leakage current ( a) fig. 4 ? typical reverse leakage characteristics fig. 6 ? typical junction capacitance number of cycles at 60 h z reverse voltage (v) fig. 2 ? maximum non-repetitive peak forward surge current peak forward surge current (a) junction temperature ( c) recovered charge / reverse recovery time, nc/ns junction capacitance, pf fig. 5 ? reverse switching characteristics 0 25 50 75 100 125 150 175 0 0.15 0.3 0.45 0.6 0.75 0.9 resistive or inductive load 0.375" (9.5mm) lead length t l lead temperature t a , ambient temperature p.c.b. mounted 0.2" x 0.2" (5 x 5mm) copper pads 1 10 100 1 10 100 t j = 75 c 8.3ms single half sine-wave (jedec method) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 100 t j = 100 c t j = 25 c pulse width = 300 s 1% duty cycle 0 20 40 60 80 100 0.01 0.1 1 10 100 1,000 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 i f = 0.6a v r =30v t rr q rr di/dt=20a/ s di/dt=150a/ s di/dt=100a/ s di/dt=50a/ s di/dt=150a/ s di/dt=100a/ s di/dt=20a/ s di/dt=50a/ s 0.1 1 10 100 1 10 100 t j = 25 c f = 1.0mh z vsig = 50mvp-p t j = 100 c t j = 25 c
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