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Datasheet File OCR Text: |
savantic semiconductor product specification silicon npn power transistors 2SC1667 description with to-3 package low collector saturation voltage excellent safe operating area applications for use in high power audio amplifier applications and high voltage switching regulator circuits pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 90 v v ceo collector-emitter voltage open base 90 v v ebo emitter-base voltage open collector 7 v i c collector current 4 a p d total power dissipation t c =75 50 w t j junction temperature 175 t stg storage temperature -55~175 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC1667 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =50ma ;i b =0 90 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =3a; i b =0.3a 1.0 v v be sat base-emitter saturation voltage i c =3a; i b =0.3a 1.5 v i cbo collector cut-off current v cb =90v ; i e =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe dc current gain i c =1a ; v ce =4v 40 200 f t transition frequency i c =0.5a ; v ce =10v 10 mhz savantic semiconductor product specification 3 silicon npn power transistors 2SC1667 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
Price & Availability of 2SC1667 |
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