features ?2.5gb/s apd receiver module in industry standard mini-dil package ?-34 dbm sensitivity (typ.) ?-4 dbm overload (typ.) ?integral thermistor ?integral gaas ic preamp ?differential electrical output applications this 40 ghz gain bandwidth product apd detector preamp is intended to function as an optical receiver in long haul sonet, sdh, and dwdm systems operating at 2.5 gb/s. the device operates in both the 1,310 and 1,550nm wavelength windows. the nominal 10k ? integral thermistor allows accurate monitoring of the apd temperature and facilitates the design of the apd bias control circuits. the detector preamplifier is dc coupled with a differential electrical output. description the FRM5W231BS incorporates a 30 micron ingaas avalanche photodiode (apd) detector, a gaas ic transimpedance preamplifier, and a thermistor in a mini-dil type package. the apd is processed with modern movpe techniques resulting in reliable performance over a wide range of operating conditions. the lens coupling system and the single mode fiber are assembled using nd: yag welding techniques. edition 1.1 june 2002 1 ingaas-apd/preamp receiver FRM5W231BS parameter symbol storage temperature t stg -40 to +85 c operating case temperature -40 to +85 c t op supply voltage 0 to +6.5 v v dd apd reverse voltage 0 to v b v v r apd reverse current 2ma i r(peak) ratings unit absolute maximum ratings (t c =25 c, unless otherwise specified)
2 ingaas-apd/preamp receiver FRM5W231BS parameter symbol optical & electrical characteristics (t c =25 c, =1.31/1.55 m, v dd =+5.0v unless otherwise specified) unit limits max. min. typ. test conditions apd responsivity a/w r13 - 0.75 0.85 1,310nm, m=1 r15 - 0.80 0.85 1,550nm, m=1 v 5.0 power supply voltage v dd 5.25 4.75 k ? 10.0 thermistor resistance r th 10.5 9.5 k 3900 thermistor b constant b 4000 3800 ma - power supply current i dd 70 - maximum overload p o1 p o2 dbm - - -7 -5 -6 -4 (note 3) (note 4) -31.0 - -33.0 tc=25 c tc=-40 to +85 c sensitivity p r dbm -34.0 -32.0 - 2.488gb/s, nrz, prbs=2 23 -1, b.e.r.=10 -10, rext=13db, vr is set at optimum value. bandwidth bw ghz - 1.8 2.0 ac-coupled, rl=50 ? , m=10, -3dbm from 1mhz temperature coefficient of v b v/ c 0.08 0.15 0.12 (note 2) ac transimpedance zt k ? -- 2.0 ac-coupled, f=100mhz, rl=50 ? equivalent input noise current in - 9.0 8.0 ac-coupled, rl=50 ?, average in bw apd breakdown voltage v b v 40 65 50 i d =10 a optical return loss orl db 30 - - note: (1) since vb may vary from device to device, vb data is attached to each device for reference. (2) = ? vb/ ? tc. (3) p o1 is defined by 10% distortion of the output waveform on the ground level in an ac-coupling condition at a multiplication factor (m) is 3. (4) p o2 is defined as the maximum overload where the ber of 10 - 10 is maintained by changing only the vr condition to obtain m=3. the other conditions are the same as those of minimum sensitivity. hz pa/
fig. 1 apd detector-preamp response as a function of frequency with multiplication level as a parameter. relative response (3db/div) 123 m=3 =1,550nm v dd =5.0v ac-coupled rl=50 ? pin=-30dbm ta=25 c m=10 m=12 0 frequency, f (ghz) bit error rate pin (dbm) v dd =5.0v m=optimum ac-coupled rl=50 ? 2.488gb/s prbs=2 31 -1 duty 50% mark density 50% -40 -35 -30 10 -10 10 -11 10 -8 10 -7 10 -6 10 -5 10 -4 10 -12 10 -9 fig. 2 bit error rate at 1,550nm and a 2.488 gb/s nrz 2 23-1 prbs for various case temperatuires. t a =-20 c t a =25 c t a =85 c 3 ingaas-apd/preamp receiver FRM5W231BS
4 ingaas-apd/preamp receiver FRM5W231BS fig. 3 output wave form tc=25?, rl=50 ? , pin=-30dbm, vdd=5.0v, m=12 100psec/div fig. 4 output wave form tc=25?, rl=50 ? pin=-7dbm, vdd=-5.2v, m=3 100psec/div
1.20.07 (0.5) 0.30.05 ? 4.10.2 ? 0.90.1 9.770.15 see lead detail (r0.7) 0.500.15 11.370.15 24.12.0 0.40.05 (p2.54x3) 7.620.2 0~10 detail of lead 7.370.15 1000 min. 5.2max. (2.0) (0.5) (#1) (#4) (#5) (#8) to p vi e w pin description 1. vr 2. ground 3. out + 4. ground 5. thermistor 6. out - 7. ground 8. vdd 5 ingaas-apd/preamp receiver FRM5W231BS fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution do not put this product into the mouth. do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. ? 2001 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0200m200 bs package unit: mm for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu quantum devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj united kingdom tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 fujitsu quantum devices singapore pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-23770226 fax: +852-23763269 fujitsu quantum devices limited business development division 11th floor, hachioji daiichi-seimei bldg. 3-20-6 myojin-cho hachioji-city, tokyo 192-0046, japan tel: +81-426-43-5885 fax: +81-426-43-5582
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