silicon bipolar mmic 5 ghz active double balanced mixer/if amp technical data features ? rf-if conversion gain from 0.05C 5 ghz ? if conversion gain from dc to 1 ghz ? low power dissipation: 65 mw at v cc = 5 v typical ? single polarity bias supply: v cc = 4 to 8 v ? load-insensitive performance ? conversion gain flat over temperature ? low lo power requirements: C5 dbm typical ? low cost plastic surface mount package iam-81008 plastic so-8 package pin configuration description the iam-81008 is a complete low power consumption, double balanced active mixer housed in a miniature low cost plastic surface mount package. it is designed for narrow or wide bandwidth commer- cial and industrial applications having rf inputs up to 5 ghz. operation at rf and lo frequencies less than 50 mhz can be achieved using optional external capacitors to ground. the iam-81008 is particularly well suited for applica- tions that require load-insensitive conversion and good spurious signal suppression with minimum lo and bias power consumption. typical applications include frequency down conversion, modulation, demodulation and phase detection. markets include fiber-optics, gps satelite navigation, mobile radio, and battery powered communications receivers. the iam series of gilbert multiplier- based frequency converters is fabricated using hps 10 ghz, f t , 25 ghz f max isosat?-i silicon bipolar process. this process uses nitride self alignment, submicrometer lithography, trench isolation, ion implantation, gold metallization and polyimide inter- metal dielectric and scratch protec- tion to achieve excellent perfor- mance, uniformity and reliability. c block c block c block c block v cc = 5 v v ee = 0 v lo input rf input if output 1 2 3 4 note: no external baluns are required. optional low
frequencies
rf ground optional low
lo ground
8 7 6 5 typical biasing configuration and functional block diagram 18 27 36 45
2 iam-81008 absolute maximum ratings parameter absolute maximum [1] device voltage 10 v power dissipation 2,3 300 mw rf input power +14 dbm lo input power +14 dbm junction temperature 150 c storage temperature C65 to 150 c thermal resistance: q jc = 80 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 4.4 mw/ c for t c > 82 c. iam-81008 part number ordering information part number devices per reel reel size iam-81008-tr1 1000 7" for more information, see tape and reel packaging for semmiconductor devices. iam-81008 electrical specifications [1] , t a = 25 c symbol parameters and test conditions: v cc = 5 v, z o = 50 w , lo =C5 dbm, rf = C20 dbm units min. typ. max. g c conversion gain rf = 2 ghz, lo = 1.75 ghz db 6.0 8.5 10 f 3 db rf rf bandwidth (g c 3 db down) if = 250 mhz ghz 3.5 f 3 db if if bandwidth (g c 3 db down) lo = 2 ghz ghz 0.6 p 1 db if output power at 1 db gain compression rf = 2 ghz, lo = 1.75 ghz dbm C6 ip 3 if output third order intercept point rf = 2 ghz, lo = 1.75 ghz dbm 3 nf ssb noise figure rf = 2 ghz, lo = 1.75 ghz db 17 rf port vswr f = 0.05 to 3.5 ghz 1.5:1 vswr lo port vswr f = 0.05 to 3.5 ghz 2.0:1 if port vswr f < 1 ghz 1.5:1 rf if rf feedthrough at if port rf = 2 ghz, lo = 1.75 ghz dbc C25 lo if lo leakage at if port lo = 1.75 ghz dbm C25 lo rf lo leakage at rf port lo = 1.75 ghz dbm C30 i cc supply current ma 10 13 16 note: 1. the recommended operating voltage range for this device is 4 to 8 v. typical performance as a function of voltage is on the following page.
3 iam-81008 typical performance, t a = 25 c, v cc = 5 v rf: C20 dbm at 2 ghz, lo: C5 dbm at 1.75 ghz (unless otherwise noted) ?0 ? 0 5 0 02 46 810 10 20 30 if p 1 db (dbm) 0 5 10 15 g c (db) i cc (ma) v cc (v) figure 1. conversion gain, if p 1 db and i cc current vs. v cc bias voltage. i cc g c p 1 db ?0 ? 0 5 5 ?5 ?5 +25 +85 +125 10 15 20 if p 1 db (dbm) 0 5 10 15 g c (db) i cc (ma) temperature (?) figure 2. conversion gain, if p 1 db and i cc current vs. case temperature. g c p 1 db i cc ? 0 5 10 g c (db) 0.1 0.2 0.5 1.0 2.0 5.0 10 rf frequency (ghz) figure 3. typical rf to if conversion gain vs. rf frequency, t a = 25? (low side lo). 1:1 2:1 3:1 4:1 vswr 0.1 1.0 10 frequency (ghz) figure 4. rf, lo and if port vswr vs. frequency. 0 2 4 6 8 10 g c (db) ?5 ? 0 ?0 5 lo power (dbm) figure 5. rf to if conversion gain vs. lo power.
if = 70 mhz
if = 1 ghz rf
lo
if ?0 ?0 ?0 ?0 0 rf to if (dbc)
lo to rf and if (dbm) 0.1 1.0 10 frequency (ghz) figure 7. rf feedthrough relative to if carrier, dbm lo to rf and if leakage vs. frequency. 0.01 0.1 1.0 2.0 frequency, rf?o (ghz) figure 6. rf to if conversion gain vs. if frequency. ? 0 2 4 6 8 10 g c (db) 012345 harmonic rf order
xmn = pif ?p(m*rf ?n*lo) figure 8. harmonic intermodulation suppression (db below desired output)
rf at 1 ghz, lo at 0.752 ghz, if at 0.248 ghz. ? 18
16
42
29
45 21
0
35
20
44
36 35
45
42
44
52
57 74
48
72
59
64
64 >75
>75
>75
>75
>75
>75 >75
>75
>75
>75
>75
>75 0
1
2
3
4
5 harmonic lo order lo = 2 ghz high side lo
low side lo rf to if
lo to if
lo to rf
package dimensions so-8 plastic package 5.84/6.20
(.230/.244) 3.80/4.00
(.1497/.1574) pin 1 1.27 (.050)
6x 4.72/5.00
(.186/.197) 0.10/0.25
(.004/.0098) 0.33/0.51
(.013/.020) 8x 1.35/1.75
(.0532/.0688) 0.19/0.25
(.0075/.0098) 0.41/1.27
(.016/.050) 0 /8 0.38 0.10
(.015 .004) x 45
0.10 (.004) note:
1. dimensions are shown in millimeters (inches). m810 www.hp.com/go/rf for technical assistance or the location of your nearest hewlett-packard sales office, distributor or representative call: americas/canada: 1-800-235-0312 or 408-654-8675 far east/australasia: call your local hp sales office. japan: (81 3) 3335-8152 europe: call your local hp sales office. data subject to change. copyright ? 1998 hewlett-packard co. obsoletes 5965-9107e printed in u.s.a. 5966-4982e (4/98)
|
