may 2011 doc id 17438 rev 4 1/14 14 STL21N65M5 n-channel 650 v, 0.175 , 17 a powerflat? (8x8) hv ultra low gate charge mdmesh? v power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description the device is a n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d STL21N65M5 710 v < 0.190 17 a (1) 1. the value is rated according to r thj-case 3 3 3 ' $ 0 o w e r & |