skyworks solutions, inc. [978] 241-7000 ? fax [978] 241-7906 ? email sales@skyworksinc.com ? www.skyworksinc.com 1 specifications subject to change without notice. 10/02a phemt gaas ic high power sp4t switch 0.1?2.5 ghz features 4 symmetric rf paths positive voltage control high ip3 excellent harmonic performance handles gsm power levels available in 100% rf tested chip form outline drawing AS192-000 v 4 j 4 j 3 v 3 v 2 j 2 j 1 v 1 ant 0.0417 (1.06 mm) 0.0387 (0.98 mm) 0.0261 (0.66 mm) 0.0209 (0.53 mm) 0.0156 (0.40 mm) 0.0030 (0.08 mm) 0.0000 (0.00 mm) 0.0000 (0.00 mm) 0.0031 (0.08 mm) 0.0045 (0.11 mm) 0.0337 (0.86 mm) 0.0351 (0.89 mm) 0.0382 (0.97 mm) description the AS192-000 is a reflective sp4t switch. it is an ideal switch for higher power applications. it can be used for gsm dual-band handset applications where both low loss, low current and small size are critical parameters. parameter frequency min. typ. max. unit insertion loss ant-j 1 , j 2 , j 3 , j 4 0.1?0.5 ghz 0.90 1.1 db 0.5?1.0 ghz 0.95 1.1 db 1.0?2.0 ghz 1.00 1.2 db 2.0?2.5 ghz 1.10 1.3 db isolation ant-j 1 , j 2 , j 3 , j 4 0.1?0.5 ghz 30 34 db 0.5?1.0 ghz 25 29 db 1.0?2.0 ghz 19 23 db 2.0?2.5 ghz 18 21 db vswr 0.1?1.0 ghz 1.3:1 1.0?2.5 ghz 1.4:1 electrical specifications at 25c (0, +4.5 v) parameter condition frequency min. typ. max. unit switching characteristics rise, fall (10/90% or 90/10% rf) 50 ns on, off (50% ctl to 90/10% rf) 100 ns video feedthru 50 mv ip3 13 dbm/tone +55 dbm 2nd and 3rd harmonics 34 dbm input 900 mhz +65 dbc control voltages v low = 0 v high = +4.5 v @ 200 a max. for rf power > 30 dbm v high = +3.0 v @ 200 a max. for rf power 20?30 dbm v high = +2.7 v @ 200 a max. for rf power < 20 dbm operating characteristics at 25c (0, +4.5 v) chip thickness 0.008 0.001 (0.203 0.025).
phemt gaas ic high power sp4t switch 0.1?2.5 ghz AS192-000 2 skyworks solutions, inc. [978] 241-7000 ? fax [978] 241-7906 ? email sales@skyworksinc.com ? www.skyworksinc.com specifications subject to change without notice. 10/02a ant v 1 j 1 j 2 v 2 v 3 j 3 j 4 v 4 pin out typical performance data notes: dc blocking caps required on rf lines for positive voltage operation bond pad metalization: gold backside metalization: none bond pad dimensions: 0.003 (0.075 mm) x 0.003 (0.075 mm) see application note, handling gaas mmic die. characteristic value rf input power 4 w > 0.5 ghz 0/+6 v control control voltage +6 v operating temperature -40c to +85c storage temperature -65c to +150c absolute maximum ratings 0 0.5 1.0 1.5 2.0 2.5 loss (db) frequency (ghz) typical insertion loss vs. frequency -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 0.5 1.0 1.5 2.0 2.5 vswr frequency (ghz) typical vswr 0 0.5 1.0 1.5 2.0 2.5 0 0.5 1.0 1.5 2.0 2.5 isolation (db) frequency (ghz) typical isolation vs. frequency -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 v 1 v 2 v 3 v 4 ant-j 1 ant-j 2 ant-j 3 ant-j 4 v high v low v low v low ins. loss isolation isolation isolation v low v high v low v low isolation ins. loss isolation isolation v low v low v high v low isolation isolation ins. loss isolation v low v low v low v high isolation isolation isolation ins. loss truth table v low = 0. v high = 4.5 to 5.0 v for rf power > 30 dbm. v high = 3.0 to 5.0 v for rf power 20?30 dbm. v high = 2.7 to 5.0 v for rf power < 20 dbm.
|
