schottky barrier diode RBQ10NS45A l applications l dimensions unit : mm l land size figure (unit : mm) general rectification l features 1)cathode common dual type.(lpds) 2)low i r . l construction l structure silicon epitaxial planer l taping dimensions (unit : mm) l absolute maximum ratings (tc=25 c) symbol unit v rm v v r v io a i fsm a tj c tstg c l electrical characteristics tj=25c) symbol min. typ. max. unit conditions forward voltage v f - - 0.65 v i f =5a reverse current i r - - 0.15 ma v r =45v 50 forward current surge peak 60hz ? 1cyc) (*2) (*1) 60hz half sin wave, 1/2 io per diode. (*2) 60hz half sin wave, one cycle, non-repetitive at tj=25 c. average rectified forward current (*1) 10 parameter limits reverse voltage (repetitive) 45 reverse voltage (dc) 45 parameter junction temperature 150 storage temperature - 40 to + 150 bq10ns 45a rohm : lpds jeita : to263s manufacture year, week and day 1/4 2011.11 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RBQ10NS45A 0.01 0.1 1 10 0 100 200 300 400 500 600 700 800 forward voltage v f (mv) v f - i f characteristics forward current:i f (a) ta=25 c ta=125 c ta= - 25 c ta=75 c ta=150 c 0.01 0.1 1 10 100 1000 10000 100000 0 10 20 30 40 50 reverse voltage v r (v) v r - i r characteristics reverse current:i r ( m a) ta= - 25 c ta=25 c ta=75 c ta=125 c ta=150 c 1 10 100 1000 0 5 10 15 20 25 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz 500 510 520 530 540 550 560 570 580 590 600 ave:551.5mv v f dispersion map forward voltage:v f (mv) ta=25 c i f =5a n=30pcs 0 5 10 15 20 25 30 reverse current:i r ( m a) i r dispersion map ta=25 c v r =45v n=30pcs ave:12.2 m a 450 460 470 480 490 500 510 520 530 540 550 ave:489.8pf ta=25 c f=1mhz v r =0v n=10pcs capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RBQ10NS45A 0 100 200 300 8.3ms 1cyc i fsm i fsm disresion map peak surge forward current:i fsm (a) ave:127.5a 0 5 10 15 20 25 30 ave:10.8ns ta=25 c i f =0.5a i r =1a irr=0.25*i r n=10pcs trr dispersion map reverse recovery time:trr(ns) 0 50 100 150 200 250 300 1 10 100 peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 8.3ms i fsm 1cyc 8.3ms 0 50 100 150 200 250 300 1 10 100 t i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - a ) rth(j - c ) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 0 2 4 6 8 10 0 5 10 15 20 forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics dc d=1/2 sin( q = 180) 3/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RBQ10NS45A 0 0.5 1 1.5 2 0 10 20 30 40 50 sin( q = 180) dc d=1/2 reverse power dissipation:p r (w) reverse voltage:v r (v) v r - p r characteristics 0 5 10 15 20 25 30 0 25 50 75 100 125 150 sin( q = 180) dc d=1/2 ambient temperature:ta( c ) derating curve(io - ta) average rectified forward current:io(a) v r io t tj=150 c d=t/t t v r =20v 0a 0v 0 5 10 15 20 25 30 0 25 50 75 100 125 150 average rectified forward current:io(a) case temperature:tc( c ) derating curve(io - tc) sin( q = 180) dc d=1/2 v r io t tj=150 c d=t/t v r =20v 0a 0v t 0 5 10 15 20 25 30 ave:4.9kv c=100pf r=1.5k w c=200pf r=0 w ave:23.3kv electrostatic discharge test esd(kv) esd dispersion map 4/4 2011.11 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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