7mbr 100sb-060 igbt pim 600v 6x100a+chopper power integrated module (pim) features ? pt-technology ? solderable package ? high short circuit withstand-capability ? small temperature dependence of the turn-off switching loss ? low losses and soft switching equivalent circuit outline drawing absolute maximum ratings ( t c =25c) items symbols test conditions ratings units collector-emitter voltage v ces 600 gate -emitter voltage v ges 20 v i c continuous 100 collector current i c pulse 1ms 200 a -i c pulse 100 inverter collector power dissipation p c 1 device 360 w repetitive peak reverse voltage v rrm 800 v average output current i o 50hz/60hz sinus wave 100 surge current (non repetitive) i fsm 700 a rectifier i 2 t (non repetitive) t j =150c, 10 ms, sinus wave 2450 a 2 s collector-emitter voltage v ces 600 gate ?emitter voltage v ges 20 v i c continuous 50 collector current i c pulse 1ms 100 a collector power dissipation p c 1 device 200 w brake chopper repetitive peak reverse voltage v rrm 600 v operating junction temperature t j +150 storage temperature t stg -40 +125 c isolation voltage v iso a.c. 1min. 2500 v mounting screw torque* 3.5 nm note: *:recommendable value; 2.5 3.5 nm (m5)
7mbr 100sb-060 igbt pim 600v 6x100a+chopper electrical characteristics ( t j =25c ) items symbols test conditions min. typ. max. units zero gate voltage collector current i ces v ge =0v v ce =600v 1.0 ma gate-emitter leackage current i ges v ce =0v v ge = 20v 200 na gate-emitter threshold voltage v ge(th) v ge =20v i c =100ma 5.5 7.8 8.5 v ge =15v chip 1.8 v collector-emitter saturation voltage v ce(sat) i c = 100a terminal 2.15 2.6 input capacitance c ies f=1mhz, v ge =0v, v ce =10v 10000 pf t on v cc = 300v 0.45 1.2 turn-on time t r,x i c = 100a 0.25 0.6 t r,i v ge = 15v 0.08 t off r g =24 ? 0.40 1.0 turn-off time t f inductive load 0.05 0.35 igbt s chip 1.6 diode forward on-voltage v f i f =100a terminal 1.95 2.7 v inverter frd reverse recovery time t rr i f =100a 300 ns chip 1.1 forward voltage v fm i f =100a terminal 1.2 1.5 v rectifier reverse current i rrm v r =800v 1.0 ma zero gate voltage collector current i ces v ge =0v v ce =600v 1.0 ma gate-emitter leackage current i ges v ce =0v v ge = 20v 200 na collector-emitter saturation voltage v ce(sat) v ge =15v chip 1.80 i c =50a terminal 2.05 2.5 v t on v cc = 300v 0.45 1.2 turn-on time t r,x i c = 50a 0.25 0.6 t off v ge = 15v 0.40 1.0 turn-off time t f r g =51 ? 0.05 0.35 s brake chopper reverse current i rrm v r =600v 1.0 ma t= 25c 5000 resistance r t=100c 465 495 520 ? ntc b value b t=25 / 50c 3305 3375 3450 k thermal characteristics items symbols test conditions min. typ. max. units inverter igbt 0.31 inverter frd 0.70 brake igbt 0.63 c/w thermal resistance (1 device) r th(j-c) rectifier diode 0.47 contact thermal resistance r th(c-f) with thermal compound 0.05
7mbr 100sb-060 igbt pim 600v 6x100a+chopper
7mbr 100sb-060 igbt pim 600v 6x100a+chopper
7mbr 100sb-060 igbt pim 600v 6x100a+chopper
7mbr 100sb-060 igbt pim 600v 6x100a+chopper specification is subject to change without notice january 1999 b
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