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technische information / technical information igbt-module igbt-modules fb10r06kl4gb1 v orl?ufi g preliminary elektrische eigenschaften /electrical properties h?chstzul?ssige werte /maximum rated values diode gleichrichter / diode rectifier periodische rckw. spitzensperrspannung repetitive peak reverse voltage t vj =25c v rrm 800 v durchla?strom grenzeffektivwert pro chip rms forward current per chip t c =80c i frmsm 23 a gleichrichter ausgang grenzeffektivstrom maximum rms current at rectifier output t c =80c i rmsmax 25 a sto?strom grenzwert t p = 10 ms, t vj = 25c i fsm 197 a surge forward current t p = 10 ms, t vj = 150c 158 a grenzlastintegral t p = 10 ms, t vj = 25c i 2 t 194 a 2 s i 2 t - value t p = 10 ms, t vj = 150c 125 a 2 s transistor wechselrichter / transistor inverter kollektor-emitter-sperrspannung collector-emitter voltage t vj =25c v ces 600 v kollektor-dauergleichstrom t c =80c i c,nom. 10 a dc-collector current t c = 25 c i c 15 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c =80c i crm 20 a gesamt-verlustleistung total power dissipation t c = 25c p tot 55 w gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v diode wechselrichter / diode inverter dauergleichstrom dc forward current i f 10 a periodischer spitzenstrom repetitive peak forw. current t p = 1 ms i frm 20 a grenzlastintegral i 2 t - value v r = 0v, t p = 10ms, t vj = 125c i 2 t 12 a 2 s transistor brems-chopper / transistor brake-chopper kollektor-emitter-sperrspannung collector-emitter voltage t vj =25c v ces 600 v kollektor-dauergleichstrom t c =80 c i c,nom. 10 a dc-collector current t c = 25 c i c 15 a periodischer kollektor spitzenstrom repetitive peak collector current t p = 1 ms, t c =80c i crm 20 a gesamt-verlustleistung total power dissipation t c = 25c p tot 55 w gate-emitter-spitzenspannung gate-emitter peak voltage v ges +/- 20v v diode brems-chopper / diode brake-chopper dauergleichstrom dc forward current i f 10 a periodischer spitzenstrom repetitive peak forw. current t p = 1 ms i frm 20 a prepared by: thomas passe date of publication: 2003-03-26 approved by: r. keggenhoff revision: 2.1 1(12)
technische information / technical information igbt-module igbt-modules fb10r06kl4gb1 vorl?ufig preliminary modul isolation / module isolation isolations-prfspannung insulation test voltage rms, f = 50 hz, t = 1 min. ntc connected to baseplate v isol 2,5 kv elektrische eigenschaften / electrical properties charakteristische werte / characteristic values diode gleichrichter / diode rectifier min. typ. max. durchla?spannung forward voltage t vj = 150c, i f = 10 a v f - 0,9 - v schleusenspannung threshold voltage t vj = 150c v (to) - 0,67 - v ersatzwiderstand slope resistance t vj = 150c r t -21- m ? sperrstrom reverse current t vj = 150c, v r = 800 v i r -5-ma modul leitungswiderstand, anschlsse-chip lead resistance, terminals-chip t c = 25c r aa'+cc' - 11 - m ? transistor wechselrichter / transistor inverter min. typ. max. kollektor-emitter s?ttigungsspannung v ge = 15v, t vj = 25c, i c = 10 a v ce sat - 1,95 2,55 v collector-emitter saturation voltage v ge = 15v, t vj = 125c, i c = 10 a - 2,2 - v gate-schwellenspannung gate threshold voltage v ce = v ge , t vj = 25c, i c = 0,35ma v ge(to) 4,5 5,5 6,5 v eingangskapazit?t input capacitance f = 1mhz, t vj = 25c v ce = 25 v, v ge = 0 v c ies - 0,8 - nf kollektor-emitter reststrom collector-emitter cut-off current gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge =20v, t vj =25c i ges - - 400 na einschaltverz?gerungszeit (ind. last) i c = i nenn , v cc = 300 v turn on delay time (inductive load) v ge = 15v, t vj = 25c, r g = 82 ohm t d,on -32-ns v ge = 15v, t vj = 125c, r g = 82 ohm - 30 - ns anstiegszeit (induktive last) i c = i nenn , v cc = 300 v rise time (inductive load) v ge = 15v, t vj = 25c, r g = 82 ohm t r -26-ns v ge = 15v, t vj = 125c, r g = 82 ohm - 28 - ns abschaltverz?gerungszeit (ind. last) i c = i nenn , v cc = 300 v turn off delay time (inductive load) v ge = 15v, t vj = 25c, r g = 82 ohm t d,off - 234 - ns v ge = 15v, t vj = 125c, r g = 82 ohm - 230 - ns fallzeit (induktive last) i c = i nenn , v cc = 300 v fall time (inductive load) v ge = 15v, t vj = 25c, r g = 82 ohm t f -10-ns v ge = 15v, t vj = 125c, r g = 82 ohm - 30 - ns einschaltverlustenergie pro puls i c = i nenn , v cc = 300 v turn-on energy loss per pulse v ge = 15v, t vj = 125c, r g = 82 ohm e on - 0,36 - mj l s = 80 nh abschaltverlustenergie pro puls i c = i nenn , v cc = 300 v turn-off energy loss per pulse v ge = 15v, t vj = 125c, r g = 82 ohm e off - 0,44 - mj l s = 80 nh kurzschlu?verhalten t p 10s, v ge 15v, r g = 82 ohm sc data t vj 125c, v cc = 360 v i sc -40- a di/dt = 400 a/s v ge = 0v, t vj =25c, v ce = 600v ma i ces - 5,0 - 2(12)
technische information / technical information igbt-module igbt-modules fb10r06kl4gb1 vorl?ufig preliminary elektrische eigenschaften / electrical properties charakteristische werte / characteristic values min. typ. max. modulinduktivit?t stray inductance module l ce - - 40 nh modul leitungswiderstand, anschlsse-chip lead resistance, terminals-chip t c = 25c r cc'+ee' - 10 - m ? diode wechselrichter / diode inverter min. typ. max. durchla?spannung v ge = 0v, t vj = 25c, i f = 10 a v f - 1,85 2,25 v forward voltage v ge = 0v, t vj = 125c, i f = 10 a - 1,9 - v rckstromspitze i f =i nenn , - di f /dt = 600 a/us peak reverse recovery current v ge = -10v, t vj = 25c, v r = 300 v i rm -11- a v ge = -10v, t vj = 125c, v r = 300 v - 12 - a sperrverz?gerungsladung i f =i nenn , - di f /dt = 600 a/us recovered charge v ge = -10v, t vj = 25c, v r = 300 v q r - 0,35 - as v ge = -10v, t vj = 125c, v r = 300 v - 0,71 - as abschaltenergie pro puls i f =i nenn , - di f /dt = 600 a/us reverse recovery energy v ge = -10v, t vj = 25c, v r = 300 v e rec - 0,05 - mj v ge = -10v, t vj = 125c, v r = 300 v - 0,12 - mj transistor brems-chopper / transistor brake-chopper min. typ. max. kollektor-emitter s?ttigungsspannung v ge = 15v, t vj = 25c, i c = 10,0 a v ce sat - 1,95 2,55 v collector-emitter saturation voltage v ge = 15v, t vj = 125c, i c = 10,0 a - 2,2 - v gate-schwellenspannung gate threshold voltage v ce = v ge , t vj = 25c, i c = 0,35ma v ge(to) 4,5 5,5 6,5 v eingangskapazit?t input capacitance f = 1mhz, t vj = 25c v ce = 25 v, v ge = 0 v c ies - 0,8 - nf kollektor-emitter reststrom collector-emitter cut-off current gate-emitter reststrom gate-emitter leakage current v ce = 0v, v ge = 20v, t vj = 25c i ges - - 400 na diode brems-chopper / diode brake-chopper min. typ. max. durchla?spannung t vj = 25c, i f = 10,0 a v f - 1,85 2,25 v forward voltage t vj = 125c, i f = 10,0 a - 1,9 - v ntc-widerstand / ntc-thermistor min. typ. max. nennwiderstand rated resistance t c = 25c r 25 -5- k ? abweichung von r 100 deviation of r 100 t c = 100c, r 100 = 493 ? ? r/r -5 5 % verlustleistung power dissipation t c = 25c p 25 20 mw b-wert b-value r 2 = r 1 exp [b(1/t 2 - 1/t 1 )] b 25/50 3375 k v ge = 0v, t vj = 25c, v ce = 600v ma - 5,0 - 3(12)
technische information / technical information igbt-module igbt-modules fb10r06kl4gb1 vorl?ufig preliminary thermische eigenschaften / thermal properties min. typ. max. innerer w?rmewiderstand gleichr. diode/ rectif. diode paste =1w/m*k r thjh - 2,6 - k/w thermal resistance, junction to heatsink trans. wechselr./ trans. inverter grease =1w/m*k - 2,8 - k/w diode wechselr./ diode inverter - 4,3 - k/w trans. bremse/ trans. brake - 2,8 - k/w diode bremse/ diode brake - 4,3 - k/w innerer w?rmewiderstand gleichr. diode/ rectif. diode r thjc - - 2,4 k/w thermal resistance, junction to case trans. wechselr./ trans.inverter - - 2,2 k/w diode wechselr./ diode inverter - - 3,1 k/w trans. bremse/ trans. brake - - 2,2 k/w diode bremse/ diode brake - - 3,1 k/w bergangs-w?rmewiderstand gleichr. diode/ rectif. diode paste =1w/m*k r thch - 0,4 - k/w thermal resistance, case to heatsink trans. wechselr./ trans. inverter grease =1w/m*k - 0,8 - k/w diode wechselr./ diode inverter - 1,5 - k/w trans. bremse/ trans. brake - 0,8 - k/w diode bremse/ diode brake - 1,5 - k/w h?chstzul?ssige sperrschichttemperatur maximum junction temperature t vj - - 150 c betriebstemperatur operation temperature t op -40 - 125 c lagertemperatur storage temperature t stg -40 - 125 c mechanische eigenschaften / mechanical properties innere isolation internal insulation al 2 o 3 cti comperative tracking index 225 anpre?kraft f. mech. befestigung pro feder mounting force per clamp gewicht weight g36g kriechstrecke creepage distance 13,5 mm luftstrecke clearance distance 12 mm kriechstrecke creepage distance 7,5 mm luftstrecke clearance distance 7,5 mm 40...80 fn terminal - terminal terminal to terminal kontakt - khlk?rper terminal to heatsink 4(12)
technische information / technical information igbt-module igbt-modules fb10r06kl4gb1 vorl?ufig preliminary i c [a] v ce [v] i c [a] v ce [v] ausgangskennlinienfeld wechselr. (typisch) i c = f (v ce ) output characteristic inverter (typical) v ge = 15 v 0 2 4 6 8 10 12 14 16 18 20 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 tj = 25c tj = 125c 0 2 4 6 8 10 12 14 16 18 20 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 vge = 8v vge = 9v vge = 10v vge = 12v vge = 15v vge = 20v ausgangskennlinienfeld wechselr. (typisch) i c = f (v ce ) output characteristicinverter (typical) t vj = 125c 5(12)
technische information / technical information igbt-module igbt-modules fb10r06kl4gb1 vorl?ufig preliminary i c [a] v ge [v] i f [a] v f [v] durchla?kennlinie der freilaufdiode wechselr. (typisch) i f = f (v f ) forward characteristic of fwd inverter (typical) 0 2 4 6 8 10 12 14 16 18 20 5,00 6,00 7,00 8,00 9,00 10,00 11,00 12,00 tj = 25c tj = 125c bertragungscharakteristik wechselr. (typisch) i c = f (v ge ) transfer characteristic inverter (typical) v ce = 20 v 0 2 4 6 8 10 12 14 16 18 20 0,00 0,50 1,00 1,50 2,00 2,50 3,00 tj = 25c tj = 125c 6(12)
technische information / technical information igbt-module igbt-modules fb10r06kl4gb1 vorl?ufig preliminary 300 v 82 ohm e [mws] i c [a] 300 v e [mws] r g [ ? ] schaltverluste wechselr. (typisch) e on = f (i c ), e off = f (i c ), e rec = f (i c ) v cc = switching losses inverter (typical) t j = 125c, v ge = 15 v, r gon = r goff = 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 80 100 120 140 160 180 200 eon eoff erec schaltverluste wechselr. (typisch) e on = f (r g ), e off = f (r g ), e rec = f (r g ) switching losses inverter (typical) t j = 125c, v ge = +-15 v , i c = i nenn , v cc = 0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 0 2 4 6 8 101214161820 eon eoff erec 7(12)
technische information / technical information igbt-module igbt-modules fb10r06kl4gb1 vorl?ufig preliminary z thjh [k/w] t [s] 82 ohm i c [a] v ce [v] transienter w?rmewiderstand wechselr. z thjh = f (t) transient thermal impedance inverte r 0,100 1,000 10,000 0,001 0,01 0,1 1 10 zth-igbt zth-fwd i 1 2 3 4 igbt: r i [k/w]: 185e-3 922,6e-3 722,7e-3 969,7e-3 ? i [s]: 3e-6 79,9e-3 10,3e-3 226,8e-3 fwd: r i [k/w]: 280,9e-3 1,41 1,1 1,51 ? i [s]: 3e-6 78,7e-3 10,16e-3 225,6e-3 sicherer arbeitsbereich wechselr. (rbsoa) i c = f (v ce ) reverse bias save operating area inverter (rbsoa) t vj = 125c, v ge = 15v, r g = 0 5 10 15 20 25 0 100 200 300 400 500 600 700 ic,modul ic,chip 8(12)
technische information / technical information igbt-module igbt-modules fb10r06kl4gb1 vorl?ufig preliminary i c [a] v ce [v] i f [a] v f [v] 0 2 4 6 8 10 12 14 16 18 20 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 tj = 25c tj = 125c durchla?kennlinie der brems-chopper-diode (typisch) i f = f (v f ) forward characteristic of brake-chopper-fwd ( t y pical ) ausgangskennlinienfeld brems-chopper-igbt (typisch) i c = f (v ce ) output characteristic brake-chopper-igbt (typical) v ge = 15 v 0 2 4 6 8 10 12 14 16 18 20 0,00 0,50 1,00 1,50 2,00 2,50 3,00 tj = 25c tj = 125c 9(12)
technische information / technical information igbt-module igbt-modules fb10r06kl4gb1 vorl?ufig preliminary i f [a] v f [v] r[ ? ] t c [c] durchla?kennlinie der gleichrichterdiode (typisch) i f = f (v f ) forward characteristic of rectifier diode (typical) 0 2 4 6 8 10 12 14 16 18 20 0,00 0,20 0,40 0,60 0,80 1,00 1,20 tj = 25c tj = 150c ntc- temperaturkennlinie (typisch) r = f (t) ntc- temperature characteristic (typical) rtyp 100 1000 10000 100000 0 20 40 60 80 100 120 140 10(12)
technische information / technical information igbt-module igbt-modules fb10r06kl4gb1 vorl?ufig preliminary schaltplan/ circuit diagram geh?useabmessungen/ package outlines bohrplan / drilling layout 11(12)
technische information / technical information igbt-module igbt-modules fb10r06kl4gb1 geh?useabmessungen forts. / package outlines contd. mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid in combination with the belon g in g technical note s 12(12)

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