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MW6IC1940NBR1 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifier the mw6ic1940nb wideband integrated circuit is designed with on--chip matching that makes it usable from 1920 to 2000 mhz. this multi--stage structure is rated for 26 to 32 volt operation and covers all typical cellular base station modulation formats. final application ? typical 2--carrier w--cdma performance: v dd =28volts,i dq1 = 200 ma, i dq2 = 440 ma, p out = 4.5 watts avg., f = 1922.5 mhz, channel bandwidth = 3.84 mhz, par = 8.5 db @ 0.01% probability on ccdf. power gain ? 28.5 db power added efficiency ? 13.5% im3 @ 10 mhz offset ? --43 dbc in 3.84 mhz bandwidth acpr @ 5 mhz offset ? -- 46 dbc in 3.84 mhz bandwidth driver applications ? typical 2--carrier w--cdma performance: v dd =28volts,i dq1 = 200 ma, i dq2 = 350 ma, p out = 26 dbm, full frequency band (1920--2000 mhz), channel bandwidth = 3.84 mhz, par = 8.5 db @ 0.01% probability on ccdf. power gain ? 27 db im3 @ 10 mhz offset ? --59 dbc in 3.84 mhz bandwidth acpr @ 5 mhz offset ? -- 62 dbc in 3.84 mhz bandwidth ? capable of handling 3:1 vswr, @ 28 vdc, 1960 mhz, 40 watts cw output power ? stable into a 3:1 vswr. all spurs below --60 dbc @ 100 mw to 20 w cw p out . features ? characterized with series equival ent large--signal impedance parameters and common source scattering parameters ? on--chip matching (50 ohm input, dc blocked, >3 ohm output) ? integrated quiescent current temperature compensation with enable/disable function (1) ? integrated esd protection ? 225 c capable plastic package ? designed for lower memory effects and wide instantaneous bandwidth applications ? rohs compliant ? in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. figure 1. functional block diagram figure 2. pin connections (top view) gnd nc rf in v gs1 gnd rf out / v ds2 gnd 1 2 3 4 5 6 7 8 16 15 14 13 12 v gs2 9 10 gnd 11 quiescent current temperature compensation (1) v ds1 rf in v gs1 rf out /v ds2 v gs2 v ds1 nc nc nc v ds1 nc nc v ds1 note: exposed backside of the package is the source terminal for the transistors. 1. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes -- an1977 or an1987. document number: mw6ic1940n--2 rev. 4.1, 12/2009 freescale semiconductor technical data MW6IC1940NBR1 1920--2000 mhz, 40 w, 28 v 2xw--cdma rf ldmos wideband integrated power amplifier case 1329--09 to--272 wb--16 plastic ? freescale semiconductor, inc., 2006--2009. a ll rights reserved.
2 rf device data freescale semiconductor MW6IC1940NBR1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +68 vdc gate--source voltage v gs --0.5, +6 vdc storage temperature range t stg --65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c input power p in 20 dbm table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case w--cdma application stage 1, 28 vdc, i dq1 = 200 ma (p out = 4.5 w avg.) stage 2, 28 vdc, i dq2 = 440 ma r jc 2.1 1.2 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1b (minimum) machine model (per eia/jesd22--a115) a (minimum) charge device model (per jesd22--c101) iv (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in freescale wideband 1920--2000 mhz test fixture, 50 ohm system) v dd =28vdc,i dq1 = 200 ma, i dq2 = 440 ma, p out = 4.5 w avg., f1 = 1922.5 mhz, f2 = 1932.5 mhz, 2--carrier w--cdma, 3.84 mhz channel bandwidth @ 5 mhz offset. im3 measured in 3.84 mhz channel bandwidth @ 10 mhz offset. par = 8.5 db @ 0.01% probability on ccdf. power gain g ps 26 28.5 31.5 db power added efficiency pae 12.5 13.5 ? % intermodulation distortion im3 ? -- 4 3 -- 4 0 dbc adjacent channel power ratio acpr ? -- 4 6 -- 4 3 dbc input return loss irl ? -- 1 5 -- 1 0 db 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. (continued)
MW6IC1940NBR1 3 rf device data freescale semiconductor table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1 = 210 ma, i dq2 = 370 ma, 1920--2000 mhz video bandwidth @ 40 w pep p out whereim3=--30dbc (tone spacing from 100 khz to vbw) ? imd3 = imd3 @ vbw frequency -- imd3 @ 100 khz <1 dbc (both sidebands) vbw ? 30 ? mhz quiescent current accuracy over temperature with 18 k ? gate feed resistors (--10 to 85 c) (1) ? i qt ? 5 ? % gain flatness in 30 mhz bandwidth @ p out =1wcw g f ? 0.75 ? db average deviation from linear phase in 30 mhz bandwidth @p out =1wcw ? 1 ? average group delay @ p out = 1 w cw including output matching delay ? 2.5 ? ns part--to--part insertion phase variation @ p out =1wcw, six sigma window ? ? 10 ? typical performances (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq1 = 240 ma, i dq2 = 440 ma, 1920--2000 mhz saturated pulsed output power (12 sec(on), 1% duty cycle) p sat ? 60 ? w 1. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes -- an1977 or an1987.
4 rf device data freescale semiconductor MW6IC1940NBR1 z7* 0.98 x 0.082 microstrip z8* 0.76 x 0.082 microstrip z9, z10 0.08 x 0.079 microstrip pcb taconic tlx8--0300, 0.030 , r =2.55 * variable for tuning z1 2.20 x0.09 microstrip z2 0.13 x0.04 microstrip z3 0.17 x0.41 microstrip z4* 0.20 x0.41 microstrip z5* 0.11 x0.41 microstrip z6* 0.06 x0.41 microstrip figure 3. MW6IC1940NBR1 test circuit schematic r1 r2 z2 rf input v g1 v g2 z3 rf output c10 c2 v d2 1 2 3 4 5 6 7 8 14 13 12 11 10 9 15 16 nc nc nc nc nc dut c1 v d1 z9 quiescent current temperature compensation z1 nc z10 z4 z7 z8 c11 c3 c5 c4 c7 c6 c9 z6 c8 z5 table 6. MW6IC1940NBR1 test circuit c omponent designations and values part description part number manufacturer c1, c2, c3 2.2 f chip capacitors c3225x5r1h225mt tdk c4, c5, c6, c7 0.5 pf chip capacitors atc100b0r5bt500xt atc c8 1.5 pf chip capacitor atc100b1r5bt500xt atc c9 0.2 pf chip capacitor atc100b0r2bt500xt atc c10, c11 10 pf chip capacitors atc100b100jt500xt atc r1 4.7 k ? , 1/4 w chip resistor crcw12064701fkea vishay r2 3.3 k ? , 1/4 w chip resistor crcw12063301fkea vishay
MW6IC1940NBR1 5 rf device data freescale semiconductor figure 4. MW6IC1940NBR1 test circuit component layout mw6ic1940nb rev. 0 v d1 v g1 v g2 v d2 c1 cut out area r1 r2 c10 c2 c4 c6 c8 c9 c5 c7 c11 c3
6 rf device data freescale semiconductor MW6IC1940NBR1 typical characteristics g ps , power gain (db) irl, input return loss (db) im3 (dbc), acpr (dbc) -- 2 2 -- 1 4 -- 1 8 -- 2 0 2000 irl g ps acpr im3 f, frequency (mhz) figure 5. 2--carrier w--cdma wideband performance @ p out = 4.5 watts avg. 1960 1940 1920 30 -- 5 1 14 13 12 11 10 -- 4 5 -- 4 7 pae, power added efficiency (%) 29 28 27 26 25 24 23 22 1980 -- 4 9 -- 1 6 v dd =28vdc,p out =4.5w(avg.) i dq1 = 200 ma, i dq2 = 440 ma, 2--carrier w--cdma, 10 mhz carrier spacing 3.84 mhz channel bandwidth par = 8.5 db @ 0. 01% probab ility ( ccdf) pae g ps , power gain (db) irl, input return loss (db) acpr (dbc), im3 (dbc) -- 2 0 -- 1 2 -- 1 6 -- 1 8 2000 irl g ps im3 f, frequency (mhz) figure 6. 2--carrier w--cdma wideband performance @ p out =26dbmavg. 1940 1910 1900 31 -- 7 0 3 2 1 -- 5 5 -- 6 0 pae, power added efficiency (%) 30 29 28 27 26 25 1950 -- 6 5 -- 1 4 v dd =28vdc,p out =26dbm(avg.) i dq1 = 200 ma, i dq2 = 350 ma, 2--carrier w--cdma, 10 mhz carrier spacing 3.84 mhz channel bandwidth par = 8.5 db @ 0. 01% probab ility ( ccdf) pae 1920 1930 1980 1990 1960 1970 acpr p out , output power (watts) pep 10 22 30 1 i dq2 = 660 ma v dd =28vdc,i dq1 = 200 ma f1 = 1955 mhz, f2 = 1965 mhz two--tone measurements, 10 mhz tone spacing 28 26 24 200 figure 7. two--tone power gain versus output power @ i dq1 = 200 ma g ps , power gain (db) 29 23 25 27 330 ma 550 ma 440 ma 220 ma p out , output power (watts) pep 10 22 30 1 i dq1 = 300 ma v dd =28vdc,i dq2 = 440 ma f1 = 1955 mhz, f2 = 1965 mhz two--tone measurements, 10 mhz tone spacing 28 26 24 200 figure 8. two--tone power gain versus output power @ i dq2 = 440 ma g ps , power gain (db) 29 23 25 27 150 ma 250 ma 200 ma 100 ma 100 100
MW6IC1940NBR1 7 rf device data freescale semiconductor typical characteristics figure 9. third order intermodulation distortion versus output power @ i dq1 = 200 ma -- 5 0 -- 2 0 i dq2 = 200 ma p out , output power (watts) pep 655 ma 10 -- 2 5 -- 3 0 -- 3 5 -- 4 0 -- 4 5 100 -- 6 0 -- 5 5 1 intermodulation d istortion (dbc) imd, third order v dd =28vdc,i dq1 = 200 ma f1 = 1955 mhz, f2 = 1965 mhz two--tone measurements, 10 mhz tone spacing 550 ma 330 ma 440 ma figure 10. third order intermodulation distortion versus output power @ i dq2 = 440 ma -- 5 0 -- 2 0 p out , output power (watts) pep 10 -- 2 5 -- 3 0 -- 3 5 -- 4 0 -- 4 5 100 -- 6 0 -- 5 5 1 intermodulation d istortion (dbc) imd, third order i dq1 = 100 ma 150 ma v dd =28vdc,i dq2 = 440 ma f1 = 1955 mhz, f2 = 1965 mhz two--tone measurements, 10 mhz tone spacing 300 ma 200 ma 250 ma 100 -- 6 0 -- 1 0 1 7th order p out , output power (watts) pep intermodulation d istortion (dbc) imd, v dd =28vdc,i dq1 = 200 ma, i dq2 = 440 ma f1 = 1955 mhz, f2 = 1965 mhz two--tone measurements, 10 mhz tone spacing 5th order 3rd order -- 2 0 -- 3 0 -- 4 0 10 figure 11. intermodulation distortion products versus output power -- 5 0 100 -- 3 6 -- 1 5 1 two--tone spacing (mhz) figure 12. intermodulation distortion products versus tone spacing intermodulation d istortion (dbc) imd, v dd =28vdc,p out = 40 w (pep), i dq1 = 200 ma, i dq2 = 440 ma, two--tone measurements (f1 + f2)/2 = center frequency of 1960 mhz im3--u -- 2 1 -- 2 4 -- 2 7 -- 3 0 -- 3 3 10 -- 1 8 im3--l p in , input power (dbm) 50 48 46 44 18 19 22 20 actual ideal p1db = 46.9 dbm (49 w) 49 45 47 21 23 24 figure 13. pulsed cw output power versus input power p out , output power (dbm) p3db = 47.4 dbm (55 w) p6db = 47.7 dbm (59 w) 51 52 53 54 25 26 27 28 29 v dd =28vdc i dq1 = 200 ma, i dq2 = 440 ma pulsed cw, 12 sec(on), 1% duty cycle f = 1965 mhz im3 ( dbc ), acpr ( dbc ) 0 -- 6 0 p out , output power (watts) avg. 45 -- 1 5 40 -- 2 0 35 -- 2 5 15 -- 3 0 5 -- 4 0 110 pae -- 3 5 10 figure 14. 2--carrier w--cdma acpr, im3, power gain and drain efficiency versus output power pae , power added efficiency (%), g ps , power gain (db) 25 20 -- 5 5 -- 4 5 g ps acpr im3 30 -- 5 0 v dd =28vdc,i dq1 = 200 ma, i dq2 = 440 ma f1 = 1955 mhz, f2 = 1965 mhz, 2--carrier w--cdma, 10 mhz carrier spacing, 3.84 mhz channel bandwidth, par = 8.5 db @ 0.01% probab ility ( ccdf) 60 0.5
8 rf device data freescale semiconductor MW6IC1940NBR1 typical characteristics 100 20 32 1 0 60 v dd =28vdc i dq1 = 200 ma, i dq2 = 440 ma f = 1960 mhz 10 30 28 26 24 22 50 40 30 20 10 p out , output power (watts) cw figure 15. power gain and power added efficiency versus output power g ps , power gain (db) pae, power added efficiency (%) pae g ps t c =--30 _ c 25 _ c 85 _ c -- 3 0 _ c 25 _ c 85 _ c p out , output power (watts) cw figure 16. power gain versus output power i dq1 = 200 ma i dq2 = 440 ma f = 1960 mhz v dd =24v 80 20 30 0 26 24 28 22 20 40 50 g ps , power gain (db) 10 30 28 v 32 v 60 70 3000 -- 3 0 30 1000 -- 2 0 10 s21 f, frequency (mhz) figure 17. broadband frequency response s11 20 5 10 0 -- 5 0 -- 1 0 -- 1 0 -- 1 5 2500 2000 1500 v dd =28vdc p out =23dbmcw i dq1 = 200 ma i dq2 = 440 ma s11 (db) s21 (db) -- 2 0 2000 22 34 1800 t c =--30 _ c 25 _ c 85 _ c 32 30 28 26 24 1840 1880 1920 f, frequency (mhz) figure 18. power gain versus frequency g ps , power gain (db) v dd =28vdc,p out =4.5wavg. i dq1 = 200 ma, i dq2 = 440 ma two--tone measurements 1960 250 10 10 90 t j , junction temperature ( c) figure 19. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd =28vdc,p out = 4.5 w avg., and pae = 13.5%. mttf calculator available at http://www.freescale.com/rf. select tools/software/application software/calculators to access the mttf calculators by product. 10 8 10 7 10 6 110 130 150 170 190 mttf (hours) 210 230 1st stage 2nd stage 10 9
MW6IC1940NBR1 9 rf device data freescale semiconductor z o =50 ? z load z source f = 1880 mhz f = 2040 mhz f = 1880 mhz f = 2040 mhz v dd =28vdc,i dq1 = 200 ma, i dq2 = 440 ma, p out =4.5wavg. f mhz z source ? z load ? 1880 69.33 + j26.65 3.65 -- j5.717 1900 65.20 + j19.39 3.55 -- j5.95 1920 61.07 + j12.13 3.45 -- j6.18 1940 56.93 + j4.87 3.35 -- j6.42 1960 52.80 -- j2.39 3.25 -- j6.65 1980 48.67 -- j9.65 3.15 -- j6.88 2000 44.53 -- j16.91 3.05 -- j7.12 2020 40.40 -- j24.17 2.95 -- j7.35 2040 36.27 -- j31.43 2.85 -- j7.583 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 20. series equivalent source and load impedance z source z load input matching network device under test output matching network
10 rf device data freescale semiconductor MW6IC1940NBR1 table 7. common source scattering parameters (v dd =28v,i dq1 = 200 ma, i dq2 = 440 ma, t c =25 c, 50 ohm system) f mhz s 11 s 21 s 12 s 22 |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 1.00 0.196 --167 0.014 --146 0.001 67 0.994 172 1.05 0.331 --176 0.026 --164 0.001 79 0.991 172 1.10 0.419 170 0.041 178 0.001 67 0.990 171 1.15 0.461 157 0.057 160 0.001 66 0.990 170 1.20 0.474 145 0.068 147 0.001 55 0.990 169 1.25 0.467 134 0.084 144 0.001 56 0.989 168 1.30 0.446 122 0.116 143 0.001 56 0.987 167 1.35 0.411 109 0.171 138 0.001 59 0.987 166 1.40 0.365 94 0.256 131 0.001 39 0.986 165 1.45 0.312 78 0.384 122 0.001 45 0.984 164 1.50 0.255 56 0.580 111 0.001 78 0.982 163 1.55 0.205 29 0.879 98 0.001 116 0.980 161 1.60 0.173 -- 6 1.345 85 0.001 101 0.977 159 1.65 0.172 -- 4 5 2.121 70 0.001 130 0.973 157 1.70 0.191 -- 8 0 3.478 53 0.001 125 0.968 153 1.75 0.217 -- 1 1 0 6.197 33 0.002 141 0.958 147 1.80 0.236 --144 13.515 5 0.003 157 0.920 130 1.85 0.154 136 39.126 -- 6 9 0.009 129 0.453 23 1.90 0.090 -- 1 1 7 20.507 --160 0.006 66 0.816 --159 1.95 0.081 --143 12.215 170 0.005 54 0.881 --178 2.00 0.026 --151 9.054 147 0.003 47 0.892 175 2.05 0.049 -- 3 1 7.340 126 0.003 48 0.894 172 2.10 0.119 -- 3 1 6.199 105 0.002 41 0.895 170 2.15 0.198 -- 4 2 5.298 85 0.002 57 0.895 169 2.20 0.270 -- 5 2 4.537 66 0.002 60 0.896 168 2.25 0.334 -- 6 1 3.875 47 0.002 66 0.899 167 2.30 0.391 -- 7 0 3.282 29 0.002 68 0.905 167 2.35 0.441 -- 7 8 2.771 13 0.002 75 0.913 166 2.40 0.485 -- 8 5 2.330 -- 3 0.002 74 0.921 166 2.45 0.523 -- 9 2 1.965 -- 1 7 0.002 73 0.930 165 2.50 0.557 -- 9 7 1.661 -- 3 1 0.002 67 0.937 165 2.55 0.587 --103 1.413 -- 4 3 0.002 73 0.944 164 2.60 0.617 --109 1.213 -- 5 5 0.003 76 0.950 163 2.65 0.643 -- 1 1 4 1.044 -- 6 6 0.002 76 0.955 162 2.70 0.665 -- 1 1 9 0.905 -- 7 7 0.003 78 0.959 162 2.75 0.687 --124 0.789 -- 8 8 0.003 75 0.961 161 2.80 0.706 --129 0.693 -- 9 9 0.003 74 0.963 160 2.85 0.723 --134 0.610 --109 0.003 74 0.966 160 2.90 0.737 --139 0.538 --120 0.003 78 0.967 159 2.95 0.751 --143 0.475 --130 0.003 79 0.969 158 (continued)
MW6IC1940NBR1 11 rf device data freescale semiconductor table 7. common source scattering parameters (v dd =28v,i dq1 = 200 ma, i dq2 = 440 ma, t c =25 c, 50 ohm system) (continued) f mhz s 11 s 21 s 12 s 22 |s 11 | ? |s 21 | ? |s 12 | ? |s 22 | ? 3.00 0.763 --147 0.418 --141 0.003 80 0.968 158 3.05 0.774 --152 0.367 --152 0.004 75 0.969 157 3.10 0.785 --156 0.319 --162 0.004 80 0.966 157 3.15 0.796 --159 0.278 --173 0.004 75 0.967 156 3.20 0.806 --163 0.239 177 0.004 77 0.965 156 3.25 0.815 --166 0.206 167 0.005 75 0.964 155 3.30 0.825 --170 0.176 157 0.005 73 0.964 155 3.35 0.833 --173 0.151 148 0.005 74 0.962 154 3.40 0.841 --176 0.128 140 0.005 71 0.961 154 3.45 0.849 --178 0.110 132 0.005 71 0.958 153 3.50 0.856 179 0.095 125 0.005 65 0.957 153 3.55 0.864 177 0.081 117 0.005 63 0.955 152 3.60 0.872 174 0.070 111 0.006 66 0.952 152 3.65 0.877 172 0.061 104 0.006 60 0.950 151 3.70 0.885 170 0.053 99 0.006 61 0.946 151 3.75 0.891 169 0.047 93 0.006 57 0.943 150 3.80 0.898 167 0.041 89 0.006 57 0.941 150 3.85 0.902 166 0.037 84 0.006 52 0.938 149 3.90 0.911 164 0.033 80 0.006 55 0.934 149 3.95 0.915 163 0.030 76 0.007 54 0.932 148 4.00 0.921 162 0.028 72 0.007 55 0.928 148
12 rf device data freescale semiconductor MW6IC1940NBR1 package dimensions
MW6IC1940NBR1 13 rf device data freescale semiconductor
14 rf device data freescale semiconductor MW6IC1940NBR1
MW6IC1940NBR1 15 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family ? an3263: bolt down mounting method for high power rf transistors and rfics in over--molded plastic packages ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 0 nov. 2006 ? initial release of data sheet 1 jan. 2007 ? updated verbiage on typical performances table, p. 2 ? updated part numbers in table 6, component desi gnations and values, to rohs compliant part numbers, p. 3 ? added new figure 13, pulsed cw output power versus input power, p. 6 ? added new figure 18, power gain versus frequency, p. 7 ? replaced figure 19, mttf versus junction te mperature with updated graph. removed amps 2 and listed operating characteristics and location of mttf calculator for device, p. 7 ? updated product documentation adding an1907 and an3263, p. 17 2 dec. 2008 ? modified data sheet to reflect rf test reduction de scribed in product and proc ess change notification number, pcn13232, p. 1, 2 ? changed 220 c to 225 c in capable plastic package bullet, p. 1 ? added footnote 1 to quiescent current temperature bu llet under features section and to callout in fig. 1, functional block diagram, p. 1 ? changed storage temperature range in max ratings table from --65 to +200 to --65 to +150 for standardization across products, p. 2 ? added case operating temperature limit to th e maximum ratings table and set limit to 150 c, p. 2 ? operating junction temperature increased from 200 c to 225 c in maximum ratings table and related ?continuous use at maximum temperature will affect mttf? footnote added, p. 2 ? updated verbiage on typical performances table, p. 3 ? updated part numbers in table 6, component designati ons and values, to latest rohs compliant part numbers, p. 4 ? adjusted scale for fig. 11, intermodulation distortion products versus output power, to show wider dynamic range, p. 7 ? added new figure 13, pulsed cw output power versus input power, p. 7 ? added new figure 18, power gain versus frequency, p. 8 ? replaced figure 19, mttf versus junction te mperature with updated graph. removed amps 2 and listed operating characteristics and location of mttf calculator for device, p. 8 ? replaced case outline 1329--09, issue l, with 1329--09, issue m, p. 12--14. added pin numbers 1 through 17. ? replaced case outline 1329a--03 with 1329a--04, issue f, p. 1, 15--17. added pin numbers 1 through 17. corrected mm dimension l for gull--wing foot from 4.90--5.06 min--max to 0.46--0.61 min--max. corrected l1 mm dimension from .025 bsc to 0.25 bsc. added jedec standard package number. ? updated product documentation adding an1907 and an3263, p. 18 2.1 jan. 2010 ? corrected data sheet to reflect rf test reduction frequency described in product and process change notification number, pcn13232, p. 1, 2 (continued)
16 rf device data freescale semiconductor MW6IC1940NBR1 revision history (continued) revision date description 3 mar. 2009 ? data sheet revised to reflect part status change of mw6ic1940gnbr1, p. 1, 4--5, including use of applicable overlay. ? updated product documentation removing an1907 and an3263, p. 15 3.1 dec. 2009 ? corrected data sheet to reflect rf test reduction frequency described in product and process change notification number, pcn13232, p. 1, 2 ? rev. 3.1 (mw6ic1940gnbr1) data sheet archived. part no longer manufactured. see rev. 4.1 for MW6IC1940NBR1. 4 mar. 2009 ? data sheet revised to reflect part status change (see rev. 3.1 for archived mw6ic1940gnbr1 data sheet), p. 1, 4--5 ? updated product documentation adding an3789, p. 15 4.1 dec. 2009 ? corrected data sheet to reflect rf test reduction frequency described in product and process change notification number, pcn13232, p. 1, 2
MW6IC1940NBR1 17 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems int ended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006--2009. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mw6ic1940n--2 rev. 4.1, 12/2009

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