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d u a l e n h a n c e m e n t m o d e m o s f e t ( n a n d p - c h a n n e l ) c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 2 7 0 1 c g f e a t u r e s a p p l i c a t i o n s p o w e r m a n a g e m e n t i n n o t e b o o k c o m p u t e r , p o r t a b l e e q u i p m e n t a n d b a t t e r y p o w e r e d s y s t e m s p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n apm2701 handling code temp. range package code package code cg : jsot-6 operating junction temp. range c : -55 to 150 c handling code tr : tape & reel lead free code l : lead free device blank : original device apm2701cg : m71x xxxxx - date code lead free code t o p v i e w o f j s o t - 6 n - c h a n n e l 2 0 v / 3 a , r d s ( o n ) = 5 0 m w ( t y p . ) @ v g s = 4 . 5 v r d s ( o n ) = 9 0 m w ( t y p . ) @ v g s = 2 . 5 v p - c h a n n e l - 2 0 v / - 1 . 5 a , r d s ( o n ) = 1 4 5 m w ( t y p . ) @ v g s = - 4 . 5 v r d s ( o n ) = 1 8 0 m w ( t y p . ) @ v g s = - 2 . 5 v s u p e r h i g h d e n s e c e l l d e s i g n r e l i a b l e a n d r u g g e d l e a d f r e e a v a i l a b l e ( r o h s c o m p l i a n t ) n - c h a n n e l m o s f e t (1)g1 (5)s1 (6)d1 p - c h a n n e l m o s f e t (3)g2 (4)d2 (2)s2 n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e i n p l a t e t e r m i n a - t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s a n d c o m p a t i b l e w i t h b o t h s n p b a n d l e a d - f r e e s o l d i e r i n g o p e r a t i o n s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j s t d - 0 2 0 c f o r m s l c l a s s i f i c a - t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . jsot-6 g2 s2 d1 g1 1 2 3 6 4 5 s1 d2 top view
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 2 a p m 2 7 0 1 c g a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) n o t e : * s u r f a c e m o u n t e d o n 1 i n 2 p a d a r e a , t 1 0 s e c . symbol parameter n channel p channel unit v dss drain - source voltage 20 - 20 v gss gate - source voltage 10 10 v i d * continuous drain current 3 - 1.5 i dm * 300 m s pulsed drain current v gs = 4.5 v 10 - 6 a i s * diode continuous forward current 1 - 1 a t j maxi mum junction temperature 150 t stg storage temperature range - 55 to 150 c t a =25 c 0.83 p d * power dissipation t a =100 c 0.3 w r q ja * thermal resistance - junction to ambient 150 c / w apm 2701c g symbol parameter test condition min. typ. max. unit static characteristics v gs =0v, i ds =250 m a n - ch 20 bv dss drain - source breakdown voltage v gs =0v, i ds = - 250 m a p - ch - 20 v v ds = 16 v, v gs =0v 1 t j =85 c n - ch 30 v ds = - 16 v, v gs =0v - 1 i dss zero gate voltage drain current t j =85 c p - ch - 30 m a v ds =v gs , i ds =250 m a n - ch 0.45 0.6 1 v gs(th) gate threshold voltage v ds =v gs , i ds = - 250 m a p - ch - 0.45 - 0.6 - 1 v n - ch 100 i gss gate leakage current v gs = 10 v, v ds =0v p - ch 100 na v gs =4.5v, i ds = 3 a n - ch 50 70 v gs = - 4.5v, i ds = - 1.5 a p - ch 145 190 v gs =2.5v, i ds = 1.7 a n - ch 90 110 r ds(on) a drain - source on - s tate resistance v gs = - 2. 5v, i ds = - 1 a p - ch 180 235 m w
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 3 a p m 2 7 0 1 c g apm 2701c g symbol parameter test condition min. typ. max. unit static characteristics (cont.) i sd = 0.5 a, v gs =0v n - ch 0.7 1.3 v sd a diode forward voltage i sd = - 0.5 a, v gs =0v p - ch - 0.7 - 1.3 v dynamic characteristics b n - ch 2 7 0 c iss input capacitance p - ch 300 n - ch 70 c oss output capacitance p - ch 50 n - ch 5 0 c rss reverse transfer capacitance n - chann el v gs =0v, v ds = 1 0v , f requency =1.0mhz p - channel v gs =0v , v ds = - 1 0v , f requency =1.0mhz p - ch 30 pf n - ch 6 12 t d(on) turn - on delay time p - ch 6 10 n - ch 5 10 t r turn - on rise time p - ch 8 12 n - ch 12 23 t d(off) turn - off delay time p - ch 10 15 n - ch 6 12 t f turn - off fall time n - channel v dd = 10 v, r l = 10 w , i d s = 1 a, v gen = 4.5v , r g = 6 w p - channel v dd = - 10 v, r l =10 w , i d s = - 1 a, v gen = - 4.5v , r g =6 w p - ch 5 10 ns gate charge characteristics b n - ch 5 6.5 q g total gate charge p - ch 4 6 n - ch 0. 5 q gs gate - source charge p - ch 0.6 n - ch 1.6 q gd gate - drain charge n - channel v ds = 10 v, v gs = 4.5 v, i d s = 3 a p - channel v ds = - 10 v, v gs = - 4.5 v, i d s = - 1.5 a p - ch 1 nc n o t e s : a : p u l s e t e s t ; p u l s e w i d t h 3 0 0 m s , d u t y c y c l e 2 %. b : g u a r a n t e e d b y d e s i g n , n o t s u b j e c t t o p r o d u c t i o n t e s t i n g . e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 4 a p m 2 7 0 1 c g 1e-4 1e-3 0.01 0.1 1 10 30 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 150 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 t y p i c a l c h a r a c t e r i s t i c s i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) i d - drain current (a) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 n - c h a n n e l 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.1 1 10 100 0.01 0.1 1 10 50 rds(on) limit 1s t a =25 o c 10ms 300 m s 1ms 100ms dc normalized transient thermal resistance
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 5 a p m 2 7 0 1 c g r ds(on) - on - resistance ( w ) d r a i n - s o u r c e o n r e s i s t a n c e i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s t r a n s f e r c h a r a c t e r i s t i c s v g s - g a t e - s o u r c e v o l t a g e ( v ) i d - drain current (a) normalized threshold voltage t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) 0 1 2 3 4 5 0 2 4 6 8 10 12 2.5v 2v 1.5v v gs = 3,4,5,6,7,8,9,10v 0 2 4 6 8 10 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 v gs =2.5v v gs =4.5v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0 1 2 3 4 5 6 7 8 9 10 t j =125 o c t j =25 o c t j =-55 o c -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i ds =250 m a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 6 a p m 2 7 0 1 c g v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (pf) v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) v gs - gate - source voltage (v) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r on @t j =25 o c: 50m w v gs = 4.5v i ds = 3a 0 4 8 12 16 20 0 100 200 300 400 500 frequency=1mhz crss coss ciss 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 t j =150 o c t j =25 o c 0 1 2 3 4 5 6 0 1 2 3 4 5 v ds = 10v i ds = 3a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 7 a p m 2 7 0 1 c g 1e-4 1e-3 0.01 0.1 1 10 30 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 150 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 t y p i c a l c h a r a c t e r i s t i c s -i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a - v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) -i d - drain current (a) p - c h a n n e l 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 120 140 160 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0.1 1 10 100 0.01 0.1 1 10 50 rds(on) limit 1s t a =25 o c 10ms 300 m s 1ms 100ms dc normalized transient thermal resistance
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 8 a p m 2 7 0 1 c g r ds(on) - on - resistance ( w ) d r a i n - s o u r c e o n r e s i s t a n c e - i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e - v d s - d r a i n - s o u r c e v o l t a g e ( v ) -i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s t r a n s f e r c h a r a c t e r i s t i c s - v g s - g a t e - s o u r c e v o l t a g e ( v ) -i d - drain current (a) normalized threshold voltage t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) 0 1 2 3 4 5 6 0.00 0.05 0.10 0.15 0.20 0.25 0.30 v gs = -2.5v v gs = -4.5v 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 1 2 3 4 5 6 t j =125 o c t j =25 o c t j =-55 o c -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i ds = -250 m a 0 1 2 3 4 5 0 1 2 3 4 5 6 -2v v gs = -3,-4,-5,-6,-7,-8,-9,-10v
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 9 a p m 2 7 0 1 c g - v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (pf) - v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d -i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) -v gs - gate - source voltage (v) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r on @t j =25 o c: 145m w v gs = -4.5v i ds = -1.5a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 6 t j =150 o c t j =25 o c 0 4 8 12 16 20 0 100 200 300 400 500 frequency=1mhz crss coss ciss 0 1 2 3 4 5 0 1 2 3 4 5 v ds = -10v i ds = -1.5a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 1 0 a p m 2 7 0 1 c g p a c k a g i n g i n f o r m a t i o n j s o t - 6 e b e1 e2 d a a2 a1 e k1 c l k e min. max. min. max. a 0.935 1.10 0.037 0.043 a1 0.01 0.10 0.0004 0.004 a2 0.925 1.00 0.036 0.039 b 0.25 0.40 0.010 0.016 c 0.10 0.20 0.004 0.008 d 2.95 3.10 0.116 0.122 e 2.50 3.00 0.098 0.118 e1 2.30 2.50 0.091 0.098 e2 2.65 3.05 0.104 0.120 e l 0.30 0.60 0.012 0.024 ? 0 8 0 8 ?1 dim 0.95 bsc 0.037 bsc 7 n0m. 7 n0m. millimeters inches
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 1 1 a p m 2 7 0 1 c g terminal material solder - plated copper (solder material : 90/10 or 63/37 snpb) , 100%sn lead solderability meets eia specification rsi86 - 91, ansi/j - std - 002 category 3. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p r e f l o w c o n d i t i o n ( i r / c o n v e c t i o n o r v p r r e f l o w ) c l a s s i f i c a t i n r e f l o w p r o f i l e s p h y s i c a l s p e c i f i c a t i o n s profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/se cond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 1 2 a p m 2 7 0 1 c g c a r r i e r t a p e & r e e l d i m e n s i o n s t ao e w po p ko bo d1 d f p1 test item method description solderability mil-std-883d-2003 245c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125c pct jesd-22-b, a102 168 hrs, 100% rh, 121c tst mil-std 883d-1011.9 -65c ~ 150c, 200 cycles r e l i a b i l i t y t e s t p r o g r a m table 1. snpb entectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. c l a s s i f i c a t i n r e f l o w p r o f i l e s ( c o n t . )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - j u n . , 2 0 0 6 w w w . a n p e c . c o m . t w 1 3 a p m 2 7 0 1 c g c o v e r t a p e d i m e n s i o n s application carrier width cover tape width devices per reel sot-23-6 8 5.3 3000 c a r r i e r t a p e & r e e l d i m e n s i o n s ( c o n t . ) a j b t2 t1 c application a b c j t1 t2 w p e 178 1 72 1.0 13.0 + 0.2 2.5 0.15 8.4 2 1.5 0.3 8.0+ 0.3 - 0.3 4 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sot - 23 - 6 3.5 0.05 1.5 +0.1 1.5 +0.1 4.0 0.1 2.0 0.1 3.15 0.1 3.2 0.1 1.4 0.1 0.2 0.03 ( m m ) c u s t o m e r s e r v i c e anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369

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