3.1 - 147 3.1 500 volt, 5 and 10 amp, n-channel igbt with a soft recovery diode in a hermetic metal package 4 11 r2 supersedes 2 07 r1 insulated gate bipolar transistor (igbt) in a hermetic to-254aa package features ? isolated hermetic metal package ? high input impedance ? low on-voltage ? high current capability ? fast turn-off ? low conductive losses ? available screened to mil-s-19500, tx, txv and s levels ? free wheeling diode ? ceramic feedthroughs available description this power module includes an igbt power transistor which features a high impedance insulated gate and the low on-resistance characteristics of bipolar transistor with a free wheeling diode connected across the emitter and collector. these devices are ideally suited for motor drives, ups converters, power supplies and resonant power converters. maximum ratings @ 25c unless specified otherwise OM6508SA om6509sa part i c (cont.) v (br)ces v ce (sat) (typ.) t f (typ.) q q jc p d t j number @ 90c, a v v ns c/w w c OM6508SA 5 500 2.8 400 3.8 35 150 om6509sa 10 500 2.8 400 3.0 42 150 schematic .144 dia. .050 .040 .260 .249 .685 .665 .800 .790 .545 .535 .550 .510 .045 .035 .550 .530 .150 typ. .150 typ. .005 collector emitter 123 ceg gate mechanical outline standard products are supplied with glass feedthroughs. for ceramic feedthroughs, add the letter c to the part number. exa mple - omxxxxcsa. igbts are also available in z-tab, dual and quad pak styles - please call the factory for more information. package options mod pak z-tab 6 pin sip pin connection pin 1: collector pin 2: emitter pin 3: gate
OM6508SA - om6509sa 3.1 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 preliminary data: OM6508SA igbt characteristics parameter - off (see note 1) min. typ. max. units test conditions v (br)ces collector emitter 500 v v ce = 0 breakdown voltage i c = 250 a i ces zero gate voltage 0.25 ma v ce = max. rat., v ge = 0 drain current 1.0 ma v ce = 0.8 max. rat., v ge = 0 t c = 125c i ges gate emitter leakage 100 na v ge = 20 v current v ce = 0 v parameter - on v ge(th) gate threshold voltage 2.0 4.0 v v ce = v ge , i c = 250 a v ce(sat) collector emitter 3.0 v v ge = 15 v, i c = 5 a saturation voltage t c = 25c v ce(sat) collector emitter 2.8 3.0 v v ge = 15 v, i c = 5 a saturation voltage t c = 100c dynamic g fs forward transductance 2.0 s v ce = 20 v, i c = 5 a c ies input capacitance 260 pf v ge = 0 c oes output capacitance 50 pf v ce = 25 v c res reverse transfer capacitance 20 pf f = 1 mhz switching-resistive load t d(on) turn-on time 37 ns v cc = 400 v, i c = 5 a t r rise time 150 ns v ge = 15 v, r g = 47 switching-inductive load t r(volt) off voltage rise time .35 s v ceclamp = 400 v, i c = 5 a t f fall time .81 s v ge = 15 v, r g = 100 t cross cross-over time 1.2 s l = 0.1 mh, t j = 100c e off turn-off losses .95 mj diode characteristics v f maximum forward voltage 1.5 v i f = 8 a, t c = 25c 1.4 v i f = 8 a, t c = 150c i r maximum reverse current 150 a v r = 600 v, t c = 25c 1.5 ma v r = 480 v, t c = 125c t rr reverse recovery time 35 ns i f = 1 a, d i / d t = -15 a /s v r = 30 v, t j = 25c note 1: limited by diode i r characteristic. preliminary data: om6509sa igbt characteristics parameter - off (see note 1) min. typ. max. units test conditions v (br)ces collector emitter 500 v v ce = 0 breakdown voltage i c = 250 a i ces zero gate voltage 0.25 ma v ce = max. rat., v ge = 0 drain current 1.0 ma v ce = 0.8 max. rat., v ge = 0 t c = 125c i ges gate emitter leakage 100 na v ge = 20 v current v ce = 0 v parameter - on v ge(th) gate threshold voltage 2.0 4.0 v v ce = v ge , i c = 250 a v ce(sat) collector emitter 3.0 2.7 v v ge = 15 v, i c = 10 a saturation voltage t c = 25c v ce(sat) collector emitter 2.8 3.0 v v ge = 15 v, i c = 10 a saturation voltage t c = 100c dynamic g fs forward transductance 2.5 s v ce = 20 v, i c = 10 a c ies input capacitance 950 pf v ge = 0 c oes output capacitance 140 pf v ce = 25 v c res reverse transfer capacitance 80 pf f = 1 mhz switching-resistive load t d(on) turn-on time 150 ns t r rise time 1000 ns v cc = 400 v, i c = 10 a t d(off) turn-off delay time 700 ns v ge = 15 v, r g = 100 t f fall time 1500 ns switching-inductive load t d(off) turn-off delay time 1.2 s v ceclamp = 350 v, i c = 10 a t f fall time 1.5 s v ge = 15 v, r g = 100 t cross cross-over time 2.0 s l = 180 h, t j = 100c e off turn-off losses 4.0 mj diode characteristics v f maximum forward voltage 1.4 v i f = 16 a, t c = 25c 1.5 v i f = 16 a, t c = 150c i r maximum reverse current 500 a v r = 600 v, t c = 25c 3.0 ma v r = 480 v, t c = 125c t rr reverse recovery time 35 ns i f = 1 a, d i / d t = -15 a /s v r = 30 v, t j = 25c note 1: limited by diode i r characteristic.
|
