bcw69 and bcw70 vishay semiconductors formerly general semiconductor document number 88174 www.vishay.com 09-may-02 1 new product small signal transistor (pnp) features ?pnp silicon epitaxial planar transistors ?suited for low level, general purpose applications. ?low current, low voltage. ?as complementary types, bcw71 and bcw72 npn transistors are recommended. maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5.0 v collector current i c 100 ma peak collector current i cm 200 ma peak base current i bm 200 ma power dissipation p tot 250 mw thermal resistance junction to ambient air r ja 500 (1) c/w junction temperature t j 150 c storage temperature range t stg 65 to +150 c note: (1) mounted on fr-4 printed-circuit board. mechanical data case: sot-23 plastic package weight: approx. 0.008g marking code: bcw69 = h1 bcw70 = h2 packaging codes/options: e8/10k per 13 reel (8mm tape), 30k/box e9/3k per 7 reel (8mm tape), 30k/box .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) to-236ab (sot-23) dimensions in inches and (millimeters) pin configuration 1 = base 2 = emitter 3 = collector 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) mounting pad layout
bcw69 and bcw70 vishay semiconductors formerly general semiconductor www.vishay.com document number 88174 2 09-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit bcw69 v ce = 5 v, i c = 10 a 90 dc current gain bcw70 h fe 150 bcw69 v ce = 5 v, i c = 2 ma 120 260 bcw70 215 500 collector-emitter saturation voltage v cesat i c = 10 ma, i b = 0.5 ma 80 300 mv i c = 50 ma, i b = 2.5 ma 150 base-emitter saturation voltage v besat i c = 10 ma, i b = 0.5 ma 720 mv i c = 50 ma, i b = 2.5 ma 810 base-emitter voltage v be v ce = 5 v, i c = 2 ma 600 750 mv v cb = 20 v, v eb = 0 100 na collector cut-off current i cbo v cb = 20 v, v eb = 0, 10 a t a = 100 c gain-bandwidth product f t v ce = 5 v, i c = 10 ma 100 mhz f = 100 mhz collector-base capacitance c cbo v cb = 10 v, f = 1 mhz, i e = 0 4.5 pf v ce =5v, i c = 200 a, noise figure f r s =2 k ? , f = 100 khz, 26db b = 200 hz
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