tsms3700 vishay telefunken 1 (6) rev. 2, 20-may-99 www.vishay.de ? faxback +1-408-970-5600 document number 81037 gaas infrared emitting diode in smt package description tsms3700 is a standard gaas infrared emitting diode in a miniature plcc2 package. its flat window provides a wide aperture, making it ideal for use with external optics. the diode is case compatible to the temt3700 photo- transistor, allowing the user to assemble his own optical interrupters. features smt ired with high radiant power low forward voltage compatible with automatic placement equipment eia and ice standard package suitable for infrared, vapor phase and wave- solder process available in 8 mm tape suitable for dc and high pulse current operation wide angle of half intensity j = 60 peak wavelength p = 950 nm high reliability matching to temt3700 phototransistor 94 8553 applications infrared source in tactile keyboards ir diode in low space applications matching with phototransistor temt3700 in reflective sensors pcb mounted infrared sensors infrared emitter for miniature light barriers
tsms3700 vishay telefunken 2 (6) rev. 2, 20-may-99 www.vishay.de ? faxback +1-408-970-5600 document number 81037 absolute maximum ratings t amb = 25 c parameter test conditions symbol value unit reverse voltage v r 5 v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1.5 a power dissipation p v 170 mw junction temperature t j 100 c operating temperature range t amb 55...+100 c storage temperature range t stg 55...+100 c soldering temperature t 10sec t sd 260 c thermal resistance junction/ambient on pc board r thja 450 k/w basic characteristics t amb = 25 c parameter test conditions symbol min typ max unit forward voltage i f = 100 ma, t p = 20 ms v f 1.3 1.7 v g i f = 1 a, t p = 100 s v f 1.8 v temp. coefficient of v f i f = 100ma tk vf 1.3 mv/k reverse current v r = 5 v i r 100 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 30 pf radiant intensity i f = 100 ma, t p = 20 ms i e 1.6 4.5 mw/sr y i f = 1.5 a, t p = 100 s i e 35 mw/sr radiant power i f = 100 ma, t p = 20 ms e 15 mw temp. coefficient of e i f = 100 ma tk e 0.8 %/k angle of half intensity j 60 deg peak wavelength i f = 100 ma p 950 nm spectral bandwidth i f = 100 ma 50 nm temp. coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 20 ma t r 800 ns i f = 1 a t r 400 ns fall time i f = 20 ma t f 800 ns i f = 1 a t f 400 ns
tsms3700 vishay telefunken 3 (6) rev. 2, 20-may-99 www.vishay.de ? faxback +1-408-970-5600 document number 81037 typical characteristics (t amb = 25 c unless otherwise specified) 020406080 0 50 100 150 200 250 p power dissipation ( mw ) v t amb ambient temperature ( c ) 100 94 8029 e r thja figure 1. power dissipation vs. ambient temperature 020406080 0 25 50 75 100 125 i forward current ( ma ) f t amb ambient temperature ( c ) 100 94 7916 e r thja figure 2. forward current vs. ambient temperature 0.01 0.1 1 10 1 10 100 1000 10000 t p pulse length ( ms ) 100 95 9985 i forward current ( ma ) f dc t p /t=0.005 0.5 0.2 0.1 0.01 0.05 0.02 t amb 60 c figure 3. pulse forward current vs. pulse duration 012 3 v f forward voltage ( v ) 4 94 7996 e 10 1 10 0 10 2 10 3 10 4 10 1 i forward current ( ma ) f figure 4. forward current vs. forward voltage 020406080 0.7 0.8 0.9 1.0 1.1 1.2 v relative forward voltage frel t amb ambient temperature ( c ) 100 94 7990 e i f = 10 ma figure 5. relative forward voltage vs. ambient temperature i f forward current ( ma ) 94 7956 e 10 3 10 1 10 2 10 4 10 0 0.1 1 10 100 i radiant intensity ( mw/sr ) e figure 6. radiant intensity vs. forward current
tsms3700 vishay telefunken 4 (6) rev. 2, 20-may-99 www.vishay.de ? faxback +1-408-970-5600 document number 81037 radiant power ( mw ) e i f forward current ( ma ) 94 8012 e 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 figure 7. radiant power vs. forward current 10 10 50 0 100 0 0.4 0.8 1.2 1.6 i ; e rel e rel t amb ambient temperature ( c ) 140 94 7993 e i f = 20 ma figure 8. rel. radiant intensity\power vs. ambient temperature 900 950 0 0.25 0.5 0.75 1.0 1.25 wavelength ( nm ) 1000 94 7994 e relative radiant power e rel i f = 100 ma figure 9. relative radiant power vs. wavelength 0.4 0.2 0 0.2 0.4 i relative radiant intensity e rel 0.6 94 8013 e 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 figure 10. relative radiant intensity vs. angular displacement
tsms3700 vishay telefunken 5 (6) rev. 2, 20-may-99 www.vishay.de ? faxback +1-408-970-5600 document number 81037 dimensions in mm 95 11315
tsms3700 vishay telefunken 6 (6) rev. 2, 20-may-99 www.vishay.de ? faxback +1-408-970-5600 document number 81037 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay-telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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