smd type ic www.kexin.com.cn 1 smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1. gate 2. drain 3. source 100v n-channel power trench mosfet KDD3680 features 25 a, 100 v. r ds(on) = 46m @v gs =10v r ds(on) = 51m @v gs =6v low gate charge (38 nc typical) fast switching speed high performance trench technology for extremely low r ds(on) high power and current handling capability absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 100 v gate to source voltage v gs 20 v drain current continuous (note 1) 25 a drain current pulsed 100 a power dissipation @ t c =25 (note 1) 68 power dissipation @ t a =25 (note 1a) 3.8 power dissipation @ ta=25 (note 1b) 1.6 operating and storage temperature t j ,t stg -55to175 thermal resistance junction to case r jc 2.2 /w thermal resistance junction to ambient r ja 96 /w i d p d w
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit single pulse drain-source avalanche energy w dss v dd =50v,i d = 6.1a (not 1) 245 mj maximum drain-source avalanche current i ar ( not 1) 6.1 a drain-source breakdown voltage b vdss v gs =0v,i d =250 a 100 v breakdown voltage temperature coefficient i d = 250 a, referenced to 25 -101 mv/ zero gate voltage drain current i dss v ds =80v,v gs =0v 10 a gate-body leakage, forward i gssf v gs =20v,v ds = 0 v 100 na gate-body leakage, reverse i gssr v gs =-20v,v ds =0v -100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 22.44 v gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 -6.5 mv/ v gs =10v,i d =6.1a 32 46 v gs =10v,i d =6.1a,tj=125 61 92 v gs =6v,i d =5.8 a, 34 51 on-state drain current i d(on) v gs =10v,v ds =5v 25 a forward transconductance g fs v ds =5v,i d =6.1a 25 s input capacitance c iss 1735 pf output capacitance c oss 176 pf reverse transfer capacitance c rss 53 pf turn-on delay time t d(on) 14 25 ns turn-on rise time tr 8.5 17 ns turn-off delay time t d(off) 63 94 ns turn-off fall time t f 21 34 ns total gate charge q g 38 53 nc gate-source charge q gs 8.1 nc gate-drain charge q gd 9.2 nc maximum continuous drain-source diode forward current i s 2.9 a drain-source diode forward voltage v sd v gs =0v,i s = 2.9 a (not 2) 0.73 1.3 v v ds =50v,i d =6.1a,v gs =10v (note 2) m r ds(on) static drain-source on-resistance v dd =50v,i d =1a,v gs =10v,r gen =10 v ds =50v,v gs =0v,f=1.0mhz KDD3680
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