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| inchange semiconductor product specification silicon npn power transistors 2SD1666 description ? with to-220f package ? complement to type 2sb1133 ?high reliability ? wide area of safe operation applications ? for low-frequency and general-purpose amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions max unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 60 v v ebo emitter-base voltage open collector 6 v i c collector current 3 a i cm collector current-peak 8 a t a =25 ?? 2 p c collector dissipation t c =25 ?? 25 w t j junction temperature 150 ?? t stg storage temperature -40~150 ?? fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1666 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ;r be = ?t 60 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 60 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 6 v v cesat collector-emitter saturation voltage i c =2a; i b =0.2a 0.6 1.0 v v be base-emitter on voltage i c =0.5a ; v ce =5v 0.7 1.0 v i cbo collector cut-off current v cb =40v; i e =0 100 | a i ebo emitter cut-off current v eb =4v; i c =0 100 | a h fe-1 dc current gain i c =0.5a ; v ce =5v 70 280 h fe-2 dc current gain i c =3a ; v ce =5v 20 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 60 pf f t transition frequency i c =0.5a ; v ce =5v 8 mhz ? h fe-1 classifications q r s 70-140 100-200 140-280 inchange semiconductor product specification 3 silicon npn power transistors 2SD1666 package outline fig.2 outline dimensions inchange semiconductor product specification 4 silicon npn power transistors 2SD1666 |
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