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dual usb high-side power switch 10/23 /2007 rev.1.00 www.siliconstandard.com 1 features ? 110m ? (5v input) high-side mosfet switch. rements for rol their e at upstream port from dropping excessively. 500ma continuous load current per channel. 110 a typical on-state supply current. 1 a typical off-state supply current. current-limit / short circuit protection. thermal shutdown protection under overcurrent condition. undervoltage lockout ensures that switch is off at start up. output can be forced higher than input (off-state). open-drain fault flag. slow turn on and fast turn off. enable active-high or active-low. applications usb power management. hot plug-in power supplies. battery-charger circuit. description the SS6526 is a dual high-side power switch for self-powered and bus-powered universal serial bus (usb) applications. both high-side switches are mosfet with 110m ? r ds(on) , which meets usb voltage drop requi maximum transmission wire length. multi-purpose open-drain fault flag output indicates over-current limiting, thermal shutdown, or undervoltage lockout for each channel. output current is typically limited to 1a, and the thermal shutdown functions of the power switches independently cont channel under overcurrent condition. guaranteed minimum output rise time limits inrush current during hot plug-in as well as minimizing emi and prevents the voltag pb-free; rohs-compliant SS6526 www.datasheet.in
10/23 /2007 rev.1.00 www.siliconstandard.com 2 typical application circuit d+ d- gnd vb us ov ercu rren t in out a gnd ct l a flg a flg b ct l b ou t b aic 1526 usb co n t r o l l e r gnd on/of f 4 . 50 v to 5. 25v u p s t r eam v b u s 1 00m a m ax da t a d+ d- gnd vb us 0.0 1 f 33 f * + da t a 0.0 1 f 33 f * + da t a 0. 1 f 10k 10 k 33 f 5. 0 v vcc fer r i t e b ead ove rcurr ent vi n on / d+ d- gnd vb us ss 6 722 out in gnd + 1 f c in 10 f c ou t + + * 3 3 f , 16v t a nt alum , o r 10 0 f , 10v elec troly t ic bol d l i ne indi ca te hig h- c urre nt trac es t w o - p ort sel f-po w e red h ub ordering information packing t y pe t r : t a pe & reel tb : tu b e packag ing t y pe n: dip-8 s: so p- 8 o: m s op -8 c: com m e rc i a l g : lead f r ee com m er c ial cont rol polarit y 0: ac tive low 1: ac tive high example: ss 6 526- 0cstr active low version, in sop-8 package & taping & reel packing type (cn is not available in tr packing) ss6 526-1pstr active high version, in lead free sop-8 package & taping & reel packing type pin configura t i on di p- 8 so p- 8 to p vi ew gnd out a in out b flg b flg a ct l b ct l a 1 3 4 2 8 6 5 7 out b out a in gnd flg b flg a ct l b ct l a 1 3 4 2 8 6 5 7 ms o p - 8 to p vi ew ss6 526 - xxxxx SS6526 www.datasheet.in
10/23 /2007 rev.1.00 www.siliconstandard.com 3 absolute maximum ratings supply voltage (v in ) 7.0v fault flag v o l t age (v flg ) 7.0v fault flag cu rre nt (i flg ) 50ma cont rol input (v ct l ) -0.3v ~7v ope r ating t e mperature ra nge -40 c~ 85 c jun c tion t e m perature 125 c s t orage t e m perature ran g e -65 c ~ 15 0 c lead t e m perature (s olde ri ng, 10sec) 260 c ther mal r e si st an ce, ja (jun ction to a m bient) dip-8 100 c/w (assum e no ambient airfl o w , no heat si nk) sop-8 160 c/w msop-8 180 c/w ther mal r e si st an ce, jc (jun ction to case ) dip-8??? ?? ???? ?? ???..60 c /w sop-8? ?? ???? ?? ???? ?40 c /w msop-8? ? ???? ?? ???? ?.7 5 c /w absolu te ma ximum ratin g s are tho s e v a lues be y ond w h i c h the life of a dev i ce ma y be imp a ired. test circuit 10 ? s s6 526 0.1 f c1 of f on v cc +5 v 10 k r 1 r4 r4 ct la out a flga in flgb gnd ct lb out b of f on 10 ? 10 k r 2 SS6526 www.datasheet.in
10/23 /2007 rev.1.00 www.siliconstandard.com 4 electrical characteristics (v in = 5v, t a =25 c, unless otherwise specified.) (note 1) parameters conditions min. typ. max. unit supply cu rre n t v ctl =logic ?0?, out = o pe n v ctl =logic ?1?, out = o pe n 0.75 1 10 5 160 a cont rol input v olt age v ctl =logic ?0? v ctl =logic ?1? 2.4 0.8 v cont rol input cu rre nt v ctl =logic ?0? v ctl =logic ?1? 0.01 0.01 1 1 a cont rol input ca p a cit an c e 1 pf output mos f et re sist an ce 1 10 150 m ? output t u rn-on ri se dela y r l = 10 ? each output 100 s output t u rn-on ri se t i m e r l = 10 ? each output 1000 2500 s output t u rn-of f delay r l = 10 ? each output 0.8 20 s o u t p u t tu r n - o f f f a l l ti m e r l = 10 ? each output 0.7 20 s output lea ka ge cu rrent 10 a cu rre nt limit thre sh old 0.6 1.0 1.25 a over t empe r ature shut do wn thre sh old t j i n crea sing t j de c r ea sin g 135 125 c erro r flag o u tput resi st a n c e v in = 5v , i l = 10 ma v in = 3.3v , i l =10 m a 10 15 25 40 ? erro r flag of f current v flg = 5v 0.01 1 a uvlo th re sh old v in i n crea sin g v in decrea si ng 2.6 2.4 v note 1: s pecification s are pro d u c tion tested at t a =2 5 c. s p e c ifications ove r the -40 c to 85 c ope rati ng temperature range are a s sure d by de si gn, ch aracte rization and correlation wit h s t atistical quality cont rol s (sq c ). SS6526 www.datasheet.in
10/23 /2007 rev.1.00 www.siliconstandard.com 5 typical performance characteristics fig. 1 on resistance vs. supply voltage on resistance (m ? ) supply voltage (v) 3.0 3 .5 4.0 4 .5 5.0 5.5 104 106 108 110 112 114 116 118 rl=47 ? t a =25 c te m p eratur e ( c ) fig. 2 o u tpu t o n re s i st an ce v s . t e m perat ure -40 - 20 0 2 0 4 0 6 0 8 0 100 80 90 100 110 120 130 140 150 o n r e sist anc e ( m ? ) rl=47 ? t a =25 c fig. 3 u v lo t hresh old v olta ge v s . t em perat ure te m p eratur e ( c ) thres h o l d volt age (v) -40 - 20 0 2 0 4 0 6 0 8 0 100 2.0 2.2 2.4 2.6 2.8 3.0 ri s i ng fa llin g f i g . 4 o n - s ta te s u p p ly c u r r e n t v s . s u p p l y v o l t a g e su ppl y volt age (v) 34 56 7 60 80 10 0 12 0 14 0 16 0 8 bo t h sw i t c h e s o n su ppl y c u rren t ( a) -40 - 20 0 2 0 4 0 6 0 8 0 100 80 90 100 110 120 130 bo th sw itch e s o n fig. 5 o n state c u rrent v s . t e mper ature t emp eratur e ( c) suppl y c u rre nt ( a) f i g . 6 of f - st a t e c u rrent v s . t e m p era t ure t e m p erat ure ( c) supp ly c u rre n t ( a) - 4 0 - 2 0 0 2 04 0 6 08 0 10 0 0 0. 02 0. 04 0. 06 0. 08 0. 10 bo t h sw i t c h e s o f f SS6526 www.datasheet.in
10/23 /2007 rev.1.00 www.siliconstandard.com 6 typical performance characteristics (continued) fig. 7 off-state current vs. supply voltage supply voltage (v) 34 5 6 7 0 0. 02 0. 04 0. 06 0. 08 0. 10 8 bo t h sw i t c h e s o f f supp ly c u rre n t ( a) f ig. 8 c ont rol t h re s h o ld v s . sup p ly vol t ag e su ppl y volt age (v) en ab le v o lt a g e 3. 0 3. 5 4. 0 4. 5 5. 0 5. 5 1. 0 1. 1 1. 2 1. 3 1. 4 1. 5 1. 6 1. 7 v en ri si n g v en f a llin g ti m e ( m s ) fig. 9 t u rn-on, t u rn-off chara c ter i s t ic s 0.0 0.5 1.0 1 .5 2.0 2 .5 6 control (v) 1 3 5 -1 0 2 4 o u tput (v) rl=47 ? fl g i out 1a fig. 10 current limit r esponse v out SS6526 www.datasheet.in
10/23 /2007 rev.1.00 www.siliconstandard.com 7 block diagram ctlb flgb flga ctla outa charge pu m p t herm a l s hut dow n charge pu m p driver uv lo current li m i t driv e r in po w e r n - mo sf e t cu r r e n t lim i t ou tb po w e r n - m o sf et cs cs pin descriptions pin 1: ctla - controls the turn-on/turn-off of channel a mosfet with ttl as a control input. active high for s s 6 526-1 a nd active lo w for ss6 526-0. pin 2: flga - an active-low and open-drained fault flag output for channel a. flga is an indicator for current limit when ctla is active. in normal mode operation (ctla or/and cltb is active), it also can indicate thermal shutdown or undervoltage. pin 3: flgb - an active-low and open-drained fault flag output for channel b. flgb is an indicator for current limit when ctlb is active. in normal mode operation (ctlb or/and clta is active), it also can indicate thermal shutdown or undervoltage. pin 4: ctlb - controls the turn-on/turn-off of channel b mosfet with ttl as a control input. active high for ss6 526-1 a n d ac tive lo w for ss6 526-0 . pin 5: outb - channel b mosfet switch output. pin 6: gnd - chip power ground. pin 7: in - power supply input. pin 8: outa - channel a mosfet switch output. SS6526 www.datasheet.in
10/23 /2007 rev.1.00 www.siliconstandard.com 8 application information error flag an error flag is an open-drained output of an n-channel mosfet. flg output is pulled low to signal the following fault conditions: input undervoltage, output current limit, and thermal shutdown. current limit the current limit threshold is preset internally. it protects the output mosfet switches from damage resulting from undesirable short circuit conditions or excess inrush current, which is often encountered during hot plug-in. the low limit of the current limit threshold of the ss 6 526 allows a minimum current of 0.6a through the mosfet switches. the error flag signals when any current limit conditions occur. thermal shutdown when temperature of ss 6 526 exceeds 135 c for any reasons, the thermal shutdown function turns both mosfet switches off and signals the error flag. a hysteresis of 10 c prevents the mosfets from turning back on until the chip temperature drops below 125 c. however, if thermal shutdown is triggered by chip temperature rise resulti ng from overcurrent fault condition of either one of the mosfet switches, the thermal shutdown function will only turn off the switch that is in overcurrent condition and the other switch can still remain its normal operation. in other words, the thermal shutdown function of the two switches is independent of each other in the case of overcurrent fault. supply filtering a 0.1 f to 1 f bypass capacitor from in to gnd, located near the device, is strongly recommended to control supply transients. without a bypass capacitor, an output short may cause sufficient ringing on the input (from supply lead inductance) to damage internal control circuitry. transient requirements usb supports dynamic attachment (hot plug-in) of peripherals. a current surge is caused by the input capacitance of down stream device. ferrite beads are recommended in series with all power and ground connector pins. ferrite beads reduce emi and limit the inrush current during hot-attachment by filtering high-frequency signals. short circuit transient bulk capacitance provides the short-term transient current needed during a hot-attachment event. a 33 f/16v tantalum or a 100 f/10v electrolytic capacitor mounted close to downstream connector each port should provide transient drop protection. printed circuit layout the power circuitry of usb printed circuit boards requires a customized layout to maximize thermal dissipation and to minimize voltage drop and emi. SS6526 www.datasheet.in
10/23 /2007 rev.1.00 www.siliconstandard.com 9 application circuit ct l a 1 fl g a 2 fl g b 3 ct l b 4 ou tb 5 gn d 6 in 7 ou ta 8 ai c 1 5 2 6 0. 1uf 4. 7uf us b c ont r ol l e r 33u f bu s p o w e r e d h u b v bus gn d us b hos t ca b l e ca b l e vbus gn d dow n s t r e a m us b de v i c e fig. 1 1 sof t s t art (single chan nel) ct l a 1 fl g a 2 fl g b 3 ct l b 4 outb 5 gn d 6 in 7 outa 8 ss6 526 0. 1uf 4. 7uf us b c ontr o lle r 33u f vbus gn d us b host ca b l e 33uf us b de vic e us b de vic e u s b peri p h eral fig. 12 inrush curre nt-limit applicati on SS6526 www.datasheet.in
10/23 /2007 rev.1.00 www.siliconstandard.com 10 physical dimensions (unit: mm) h l d e h e c b a1 0.5 0 0. 25 0. 40 0 1. 27 8 1.2 7 bs c 4. 80 5. 80 3. 80 0. 33 0. 19 0. 10 5.0 0 6. 20 4. 00 0.5 1 0.2 5 0.2 5 s y m b o l a sop-8 mill imet ers 1. 35 mi n . 1. 75 max. a l vi ew b 0.2 5 bas e m etal g aug e p l an e wi th pla t ing a1 b c d e aa h e h x 45 s e e view b sop-8 se at i n g pl an e note: 1.refer to jede c ms-012aa. 2.dimension ?d? does not include mo ld flash, protrusions or gate burrs. mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3.dimension ?e? does not includ e inter-lead flash or protrusions. inter-lead flash o r prot rusion s hall not exceed 1 0 mil per side. 4.controlling dimension is millim e ter , converted in ch dimensions are not necessari ly e x act. SS6526 www.datasheet.in
10/23 /2007 rev.1.00 www.siliconstandard.com 11 dip-8 gauge plane 0. 38 a a1 a2 l d1 a b2 a e eb ea e1 d e d with plating se ct ion a - a base m e tal c 2. 5 4 b s c e l eb ea 2. 92 7. 6 2 b s c 3. 8 1 10 .92 d 9. 01 e e1 d1 7. 62 6. 1 0 0. 13 c b2 b 0. 20 1. 1 4 0. 36 10 .16 8. 26 7. 1 1 0. 3 5 1.7 8 0. 5 6 mi ll imet ers min. s y m b o l a1 a2 a 0. 38 2. 92 max. 4. 95 5. 3 3 di p- 8 note: 1.refer to jede c ms-001ba. 2.dimension d, d1 a nd e1 do not include mold flash o r protrusions. mold flash or protr u sion shall not exceed 10 mil. 3.controlling dimension is millim e ter , converted in ch dimensions are not necessari ly e x act. SS6526 www.datasheet.in
SS6526 10/ 2 3 /2007 rev.1.00 www.siliconstandard.com 12 information furnished by silicon standard corporation is believed to be accurate and reliable. however, silicon standard corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. silicon standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. no license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of silicon standard corporation or any third parties. msop-8 a a1 a2 vi ew b l 0.2 5 se ct io n a - a bas e me tal with p l atin g b c e d a e a e1 see v i ew b e l c e e1 d a2 b a1 0. 65 b s c 0. 40 0 0. 7 0 6 4. 90 b s c 0. 13 2. 9 0 2. 9 0 0. 75 0. 25 0. 05 0. 2 3 3. 1 0 3. 1 0 0. 9 5 0. 4 0 0. 1 5 s y m b o l a ms o p - 8 mi lli me te rs mi n. 1. 10 m ax. note: 1. refer to jedec mo-187aa. 2. dimension ?d? does not include mo ld flash, protr u sions or gat e burrs. mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. dimension ?e? does not includ e inter-lead flash or protr u sions. inter-lead flash and protrusions shall not excee d 10 mil pe r side. 4. cont rolling dimension is millim eter , converted inch dimensions are not necessari ly e x act. www.datasheet.in

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