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| inchange semiconductor product specification silicon pnp power transistors 2SB754 description ? ? with to-3p(i) package ? complement to type 2sd844 ?high collector current :i c =-7a ? low collector saturation voltage ? high power dissipation applications ? high current switching applications ? power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -50 v v ceo collector-emitter voltage open base -50 v v ebo emitter-base voltage open collector -5 v i c collector current -7 a i e emitter current 7 a t a =25 ?? 2.5 p c collector power dissipation t c =25 ?? 60 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors 2SB754 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -50 v v (br)ebo emitter-base breakdown voltage i e =-10ma; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-4.0a; i b =-0.4a -0.2 -0.4 v v be base-emitter voltage i c =-4a ; v ce =-1v -0.9 -1.2 v i cbo collector cut-off current v cb =-50v; i e =0 -10 | a i ebo emitter cut-off current v eb =-5v; i c =0 -10 | a h fe-1 dc current gain i c =-1a ; v ce =-1v 70 240 h fe-2 dc current gain i c =-4a ; v ce =-1v 30 f t transition frequency i c =-1a ; v ce =-5v 10 mhz c ob collector output capacitance i e =0;f=1mhz ; v cb =-10v 300 pf ? h fe-1 classifications o y 70-140 120-240 inchange semiconductor product specification 3 silicon pnp power transistors 2SB754 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) inchange semiconductor product specification 4 silicon power transistors 2SB754 |
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