to-92l plastic-encapsulate transistors 2SC2236 transistor (npn) feature complementary to 2sa966 and 3 watts o utput applications. maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current -continuous 1.5 a p c collector power dissipation 0.9 w t j junction temperature 150 t stg storage temperature -55 ~+ 150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions m in typ max unit collector-base breakdown voltage v(br) cbo i c = 1ma , i e =0 30 v collector-emitter breakdown voltage v(br) ceo i c = 10ma , i b =0 30 v emitter-base breakdown voltage v(br) ebo i e = 1ma, i c =0 5 v collector cut-off current i cbo v cb =30v , i e =0 0.1 a emitter cut-off current i ebo v eb =5v , i c =0 0.1 a dc current gain h fe v ce =2 v, i c = 500ma 100 320 collector-emitter saturation voltage v ce(sat) i c = 1.5 a, i b = 0.03a 2 v base-emitter voltage v be i c = 500 ma, v ce = 2v 1 v transition frequency f t v ce = 2v, i c = 500ma 120 mhz collector output capacitance c ob v cb = 10v, i e = 0,f=1mhz 30 pf classification of h fe rank o y range 100-200 160-320 to-92l 1. emitter 2. collector 3. base tiger electronic co.,ltd a,jun,2011
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