utc 2sC2328A npn epitaxial silicon transistor utc unisonic technologies co., ltd. 1 qw-r211-008,a audio power amplifier features *collector dissipation pc=1 w *3 w output application *complement of 2sa928a to-92nl 1 1: emitter 2: collector 3: base absolute maximum ratings (ta=25 c, unless otherwise specified) parameter symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5 v collector dissipation pc 1 w collector current ic 2 a junction temperature t j 150 c storage temperature t stg -55 ~ +150 c electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo ic=100 a,i e =0 30 v collector-emitter breakdown voltage bv ceo ic=10ma,i b =0 30 v emitter-base breakdown voltage bv ebo i e =1ma,ic=0 5 v collector cut-off current i cbo v cb =30v,i e =0 100 na emitter cut-off current i ebo v be =5v,ic=0 100 na dc current gain(note) h fe v ce =2v,ic=500ma 100 320 base-emitter on voltage v be (on) v ce =2v,ic=500ma 1 v collector-emitter saturation voltage v ce (sat) ic=1.5a,i b =0.03a 2 v output capacitace cob v cb =10v, i e =0,f=1mhz 30 pf current gain bandwidth product f t v ce =2v,ic=500ma 120 mhz classification of hfe rank o y range 100-200 160-320
utc 2sC2328A npn epitaxial silicon transistor utc unisonic technologies co., ltd. 2 qw-r211-008,a typical characteristic curves 0246810121416 0 200 400 600 800 1000 1200 1400 i b =7ma i b =6ma i b =5ma i b =4ma i b =3ma i b =2ma i b =1ma v ce (v),collector-emitter voltage i c (ma),collector current fig.1 static characteristic 0 0.2 0.4 0.6 0.8 1.0 1.2 0 200 400 600 800 1000 1200 1400 v be (v),base-emitter voltage i c (ma),collector current fig.2 base-emitter on vlotage 1.4 v ce =2v 1 3 10 30 100 300 1000 3000 10 30 50 100 300 500 1000 ic(ma),collector current hfe dc current gain fig.3 dc current gain v ce =2v 1 3 10 30 100 300 1000 3000 0.01 0.03 0.05 0.1 0.3 0.5 1 ic(ma),collector current v ce (sat)(v),saturation voltage fig.4 collector-emitter saturation voltage ic=50l b ta=25c 3 0 20 40 60 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1.0 1.2 ta(c),ambient temperature p d (w),power dissipation fig.5 power derating 0.3 0.01 v ce (v), collector emitter voltage i d (ma),collector current fig.6 safe operating area 0.5 1 0.1 3 5 10 30 0.03 0.05 0.1 0.3 0.5 1 3 5 50 100 ic(max) ic(max) pulse ta=25c d.c operation 1s 1ms v ceo max
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