IRFPS3810 hexfet ? power mosfet the hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. s d g parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 170 i d @ t c = 100c continuous drain current, v gs @ 10v 120 a i dm pulsed drain current 670 p d @t c = 25c power dissipation 580 w linear derating factor 3.8 w/c v gs gate-to-source voltage 30 v e as single pulse avalanche energy 1350 mj i ar avalanche current 100 a e ar repetitive avalanche energy 58 mj dv/dt peak diode recovery dv/dt 2.3 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings parameter typ. max. units r jc junction-to-case ??? 0.26 r cs case-to-sink, flat, greased surface 0.24 ??? c/w r ja junction-to-ambient ??? 40 thermal resistance v dss = 100v r ds(on) = 0.009 ? i d = 170a description 04/26/02 www.irf.com 1 advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated super - 247? pd - 93912b
IRFPS3810 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.11 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.009 ? v gs = 10v, i d = 100a v gs(th) gate threshold voltage 3.0 ??? 5.0 v v ds = 10v, i d = 250a g fs forward transconductance 52 ??? ??? s v ds = 50v, i d = 100a ??? ??? 25 a v ds = 100v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 30v gate-to-source reverse leakage ??? ??? -100 na v gs = -30v q g total gate charge ??? 260 390 i d = 100a q gs gate-to-source charge ??? 49 74 nc v ds = 80v q gd gate-to-drain ("miller") charge ??? 160 250 v gs = 10v t d(on) turn-on delay time ??? 24 ??? v dd = 50v t r rise time ??? 270 ??? i d = 100a t d(off) turn-off delay time ??? 45 ??? r g = 1.03 ? t f fall time ??? 140 ??? v gs = 10v between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 6790 ??? v gs = 0v c oss output capacitance ??? 2470 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 990 ??? ? = 1.0mhz, see fig. 5 c oss output capacitance ??? 10740 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 1180 ??? v gs = 0v, v ds = 80v, ? = 1.0mhz c oss eff. effective output capacitance ??? 2210 ??? v gs = 0v, v ds = 0v to 80v nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns 5.0 13 i dss drain-to-source leakage current repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) i sd 100a, di/dt 350a/s, v dd v (br)dss , t j 175c notes: starting t j = 25c, l = 0.27mh r g = 25 ? , i as = 100a. (see figure 12) pulse width 400s; duty cycle 2%. s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 100a, v gs = 0v t rr reverse recovery time ??? 220 330 ns t j = 25c, i f = 100a q rr reverse recoverycharge ??? 1640 2460 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 170 670 a c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss calculated continuous current based on maximum allowable junction temperature. package limitation current is 105a.
IRFPS3810 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 1000 0.1 1 10 100 50 s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.0v 5.5v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 0.1 1 10 100 50 s pulse width t = 175 c j top bottom vgs 15v 12v 10v 8.0v 7.0v 6.0v 5.5v 5.0v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 5 6 7 8 9 10 11 12 13 v = 50v 50 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 170a
IRFPS3810 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 100 200 300 400 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 100a v = 20v ds v = 50v ds v = 80v ds 1 10 100 v ds , drain-to-source voltage (v) 0 5000 10000 15000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 10 100 1000 0.2 0.8 1.4 2.0 2.6 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 1000 10000 i d , drain-to-source current (a) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
IRFPS3810 www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 40 80 120 160 200 t , case temperature ( c) i , drain current (a) c d limited by package
IRFPS3810 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 500 1000 1500 2000 2500 3000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 41a 71a 100a
IRFPS3810 www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer *
IRFPS3810 8 www.irf.com super-247? package outline b ? 1.60 [.063] 12 0.25 [.010] b a 3 0.13 [.005] 2.35 [.092] 1.65 [.065] 2.15 [.084] 1.45 [.058] 5.50 [.216] 4.50 [.178] e e 3x 1.60 [.062] 1.45 [.058] 16.10 [.632] 15.10 [.595] 20.80 [.818] 19.80 [.780] 14.80 [.582] 13.80 [.544] 4.25 [.167] 3.85 [.152] 5.45 [.215] 1.30 [.051] 0.70 [.028] 13.90 [.547] 13.30 [.524] 16.10 [.633] 15.50 [.611] 4 0.25 [.010] ba 4 3.00 [.118] 2.00 [.079] a 2x r max. section e-e 2x 1.30 [.051] 1.10 [.044] 3x 1. dimens ioning and t ole rancing per as me y14.5m-1994. 2. dimens ions are s hown in millime t ers [inches ] 3. cont r ol l ing dime ns ion: mil l ime t e r not e s: 4. out line conf orms t o je dec out line t o-274aa 3 - s ource 2 - drain 1 - gat e 4 - drain 3 - emitter 4 - colle ct or 1 - gat e 2 - colle ct or l e ad as s i gnme nt s mos f e t igbt c data and specifications subject to change without notice. this product has been designed and qua lified for the industria l market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/02
|
