unisonic technologies co., ltd ud4809 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2008 unisonic technologies co., ltd qw-r502-177.a n-channel enhancement mode ? description this ud4809 n-channel mosfet is produced using utc advanced process which has been tailored to make the on-state resistance minimum and yet maintain low gate charge for superior switching performance especially. the ud4809 is well suited for where low in-line power loss is needed in a very small outline surface mount package, such as low voltage and battery powered applications. ? features * low r ds(on) * low capacitance * optimized gate charge ? symbol 1.gate 3.source 2.drain *pb-free plating product number: ud4809l ? ordering information ordering number pin assignment normal lead free plating package 1 2 3 packing ud4809-tn3-r UD4809L-TN3-R to-252 g d s tape reel ud4809-tn3-t ud4809l-tn3-t to-252 g d s tube
ud4809 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-177.a ? absolute maximum ratings (t a = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 gate-source voltage v gss 20 v continuous drain current (note 3) i d 9.0 a drain to source dv/dt dv/dt 6.0 v/ns power dissipation (note 3) p d 1.3 w junction temperature t j +150
storage temperature t stg -55 ~ +150
note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol min typ max unit junction-to-ambient (note 3) ja 116
/w junction-to-case jc 2.9
/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250a 30 v drain-source leakage current i dss v ds =24v, v gs =0 v 1.0 a gate-source leakage current i gss v ds =0 v, v gs = 20v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250 a 1.5 2.5 v i d =30 a 7.0 9.0 v gs =10~11.5 v i d =15 a 7.0 m ? i d =30 a 12 14 static drain-source on-resistance (note 2) r ds(on) v gs =4.5 v i d =15 a 11 m ? dynamic parameters input capacitance c iss 1456 output capacitance c oss 315 reverse transfer capacitance c rss v ds =12 v, v gs =0v, f=1mhz 200 pf switching parameters turn-on delay time t d(on) 12.3 turn-on rise time t r 21.3 turn-off delay time t d(off) 15.1 turn-off fall-time t f v gs =4.5v,v ds =15v, i d =15a, r g =3.0 ? 5.3 ns turn-on delay time t d(on) 7.0 turn-on rise time t r 22.7 turn-off delay time t d(off) 25.3 turn-off fall-time t f v gs =11.5v,v ds =15v, i d =15a, r g =3.0 ? 2.8 ns total gate charge q g(tot) 11 13 threshold gate charge q g(th) 2.5 gate-source charge q gs 4.8 gate-drain charge q gd v ds =15v, v gs =4.5v, i d =30a 5.0 nc source- drain diode ratings and characteristics diode forward voltage v sd i s =30a,v gs =0v 0.95 1.2 v source current (body diode) i s 43 a reverse recovery time t rr 19.5 ns reverse recovery time q rr v gs = 0 v, dis/dt= 100 a/ s, i s = 30 a 9.2 nc note: 1. pulse width limited by t j(max) 2. pulse test: pulse width 300 s, duty cycle 2%. 3. surface-mounted on fr4 board using the minimum recommended pad size.
ud4809 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-177.a ? typical characteristics drain current,i d (a) drain current,i d (a) drain to source on-resistance, r ds(on) (m $ ) drain to source on-resistance, r ds(on) (m $ ) drain to source leakage current, i dss (na) normalized drain-to-source resistance,r ds(on)
ud4809 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-177.a ? typical characteristics(cont.) v dd =15v i d =30a v gs =11.5v t d(off) t r t f t d(on) 1000 100 10 1 1 10 100 gate resistance,r g (ohms) resistive switching time variation vs. gate resistance v gs =0v t j =25 30 25 20 15 10 5 0 0.5 0.6 0.7 0.8 0.9 1.0 body diode forward voltage,v sd (v) body-diode characteristics gate to source voltage,v gs (v) c a p a c i t a n c e ( p f ) i d =15a 25 100 125 100 10 1 0.1 1 10 100 1000 175 150 125 100 75 50 25 0 20 40 60 80 100 120 junction temperature,t j ( ) drain current,i d (a) pulse width ( 0 s) avalanche characteristics maximum avalanche energy vs. starting junction temperature single pulse drain-to-source avalanche energy,e as (mj)
ud4809 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-177.a ? typical characteristics(cont.) drain current,i d (a) 1.0 0.1 0.01 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 time,t ( 0 s) thermal response normalized effective transient thermal resistance,r (t) d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse p (pk) t 1 t 2 r , jc (t)=r(t)r , jc d curves apply for power pulse train shown read time at t 1 t j(pk) -t c =p (pk) r , jc (t) duty cyclr,d=t 1 /t 2 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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