unisonic technologies co., ltd ut40n04 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2010 unisonic technologies co., ltd qw-r502-467.a n-channel logic level enhancement mode fidld effect transistor ? description the utc 40n04 is an n-channel enhancement mode fet using advanced technology to provide fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. ? features * low on-resistance * fast switching speed * halogen free ? symbol g d s ? ordering information pin assignment ordering number package 1 2 3 packing UT40N04G-TN3-R to-252 g d s tape reel note: g: gate, d: drain, s: source
ut40n04 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-467.a ? absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 40 v gate-source voltage v gs 20 v t c =25c 25 continuous drain current t c =70c i d 20 pulsed drain current (note 1) i dm 75 avalanche current i as 27 a avalanche energy l=0.1mh e as 37 mj t c =25c 30 power dissipation t c =70c p d 20 w operating junction temperature t j -55~150 c storage temperature t stg -55~150 c note:1. pulse width limited by maximum junction temperature. 2. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 40 c/w junction to case jc 4.1 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 40 v v ds =32v, v gs =0v 1 drain-source leakage current i dss v ds =30v, v gs =0v, t j =125c 10 a gate- source leakage current i gss v ds =0v, v gs =20v 250 na on-state drain current (note 1) i d(on) v ds =5v, v gs =10v 75 a on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2 2.4 3 v v gs =5v, i d =8a 26 50 v gs =7v, i d =8a 22 45 static drain-source on-state resistance (note 1) r ds(on) v gs =10v, i d =10a 19 29 m ? forward transconductance (note 1) g fs v ds =5v, i d =10a 30 s gate resistance r g v gs =0v, v ds =0v, f=1.0mhz 1.55 ? dynamic parameters input capacitance c iss 1150 output capacitance c oss 157 reverse transfer capacitance c rss v gs =0v, v ds =20v, f=1.0mhz 80 pf switching parameters (note 2) q g (v gs =10v) 19 total gate charge q g (v gs =4.5v) 9 gate to source charge q gs 4.5 gate to drain charge q gd v ds =0.5v (br)dss , i d =10a 3 nc turn-on delay time t d(on) 10 ns rise time t r 6 ns turn-off delay time t d(off) 26 ns fall-time t f v gs =10v, v ds =20v, i d -1a, r gs =6 ? , r l =1 ? 6 ns source- drain diode ratings and characteristics continuous current i s 23 a drain-source diode forward voltage (note 1) v sd i f =10a, v gs =0v 1.3 v reverse recovery time t rr 38 ns reverse recovery charge q rr i f =10a, di f /dt=100a/s 29 nc note: 1. pulsde test: pulse width 300sec, duty cycle 2%. 2. independent of o perating temperature.
ut40n04 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-467.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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