high voltage - high power gan-hemt EGNB090MK edition 1.2 mar. 2010 1 features ? high voltage operation : v ds =50v ? high power : 51.0dbm (typ.) @ p3db ? high efficiency: 70%(typ.) @ p3db ? linear gain : 18db(typ.) @ f=0.9ghz ? proven reliability description sedi's gan-hemt offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power l-band amplifiers with 50v operation, and gives you higher gain. this device target applications are low current and wide band applications for high voltage. absolute maximum ratings item symbol condition rating unit drain-source voltage v ds 120 v gate-source voltage v gs -5 v total power dissipation p t tc=25 o c 150 w storage temperature t stg -65 to +175 o c channel temperature t ch 250 o c recommended operating condition(case temperature tc= 25 o c) item symbol condition limit unit dc input voltage v ds 50 v forward gate current i gf r g =5 ? <76.0 ma reverse gate current i gr r g =5 ? >-7.2 ma electrical characteristics (case temperature tc=25 o c) item symbol condition limit unit min. typ. max. pinch-off voltage v p v ds =50v i ds =36ma -1.0 -2.0 -3.5 v 3db gain compression power p 3db v ds =50v 50.0 51.0 - dbm drain efficiency d i ds(dc) =500ma - 70 - % linear gain g l f=0.9ghz 16 18 -db thermal resistance r th channel to case - 1.2 1.5 o c/w at 90w p dc
high voltage - high power gan-hemt EGNB090MK edition 1.2 mar. 2010 2 output power vs. frequency v ds =50v i ds(dc) =500ma output power and drain efficiency vs. input power v ds =50v i ds(dc) =500ma f=0.9ghz rf performance @f=0.9ghz fine tuned test fixture 34 36 38 40 42 44 46 48 50 52 54 0.75 0.80 0.85 0.90 0.95 1.00 1.05 frequency [ghz] output power [dbm] pin=22dbm pin=26dbm pin=30dbm pin=34dbm pin=38dbm 34 36 38 40 42 44 46 48 50 52 54 21 23 25 27 29 31 33 35 37 39 input power [dbm] output power [dbm] 0 10 20 30 40 50 60 70 80 90 100 drain effciency [%]
high voltage - high power gan-hemt EGNB090MK edition 1.2 mar. 2010 3 power derating curve 32 200 98 180 640 150 3796 125 mttf (years) channel temp (deg-c) confidence level=60% mttf calculation ? estimated mttf ? esd characteristic a machine model (per jeia/esd22-a115) 1b human body model (per jesd22-a114) class test methodology 1.0e+05 1.0e+06 1.0e+07 1.0e+08 1.0e+09 1.0e+10 80 100 120 140 160 180 200 channel temerature (deg-c) mttf (hour) 0 20 40 60 80 100 120 140 160 0 100 200 300 case temperqture total power dissipation [w]
high voltage - high power gan-hemt EGNB090MK edition 1.2 mar. 2010 4 s-parameters @v ds =50v i ds =500ma f=0.1 to 3.1 ghz z l = z s = 50 ohm marker : 0.9ghz -1 -0.8 -0.6 -0.4 -0.2 0 0. 2 0. 4 0. 6 0. 8 1 -1 0 1 +j50 s22 s11 +j100 +j25 0 -j100 - j 50 -j25 s22 s11 - 1 -0.75 -0.5 -0.25 0 0.25 0.5 0.75 1 - 1 -0.75 -0.5 -0.25 0 0.25 0. 5 0.75 1 +90 180 -90 0 s21 s12 scale for |s21| scale for|s12| 40 0.1 s21 s12 freq. ghz mag ang mag ang mag ang mag ang 0.10 0.95 -163.59 28.25 90.39 0.007 3.53 0.40 -154.94 0.20 0.95 -173.13 13.73 77.47 0.007 -6.40 0.44 -157.04 0.30 0.95 -176.51 8.78 68.19 0.006 -12.21 0.49 -156.28 0.40 0.95 -178.84 6.29 60.27 0.006 -11.45 0.54 -156.08 0.50 0.95 179.59 4.76 52.89 0.005 -15.58 0.60 -157.05 0.60 0.95 178.20 3.75 46.56 0.004 -12.27 0.64 -158.44 0.70 0.96 177.09 3.04 40.68 0.004 -9.22 0.69 -160.41 0.80 0.96 175.77 2.49 35.02 0.003 -5.30 0.72 -162.48 0.90 0.95 174.85 4.42 29.82 0.003 3.09 0.75 -164.53 1.00 0.96 173.67 1.78 24.92 0.003 20.77 0.78 -166.57 1.10 0.97 172.58 1.53 20.42 0.003 27.53 0.80 -168.49 1.20 0.97 171.65 1.32 16.02 0.003 30.98 0.82 -170.29 1.30 0.96 170.90 1.15 12.14 0.003 47.43 0.84 -172.09 1.40 0.97 170.21 1.02 8.06 0.004 53.69 0.85 -173.77 1.50 0.97 169.28 0.91 4.44 0.004 58.41 0.87 -175.52 1.60 0.97 168.10 0.81 0.53 0.004 57.70 0.88 -176.99 1.70 0.97 167.19 0.72 -3.10 0.005 58.09 0.89 -178.62 1.80 0.97 166.76 0.66 -6.25 0.006 64.81 0.90 -179.81 1.90 0.98 166.11 0.60 -8.91 0.006 62.86 0.91 178.90 2.00 0.98 165.23 0.56 -12.45 0.006 66.05 0.91 177.65 2.10 0.97 164.82 0.51 -15.26 0.007 66.05 0.92 176.51 2.20 0.97 164.01 0.48 -18.44 0.007 68.64 0.92 175.32 2.30 0.98 162.94 0.44 -22.22 0.008 63.50 0.93 174.16 2.40 0.98 162.66 0.41 -24.66 0.009 68.56 0.93 173.18 2.50 0.97 161.58 0.39 -27.48 0.009 66.77 0.94 172.08 2.60 0.98 161.52 0.37 -29.68 0.010 65.02 0.94 171.19 2.70 0.98 160.72 0.35 -32.99 0.010 65.50 0.94 170.33 2.80 0.98 160.09 0.33 -35.23 0.010 66.48 0.94 169.29 2.90 0.97 159.57 0.32 -38.92 0.011 66.34 0.94 168.30 3.00 0.97 159.08 0.31 -40.35 0.011 66.90 0.95 167.45 3.10 0.97 158.34 0.29 -43.59 0.012 67.67 0.95 166.20 s11s21s12s22 s12 s21
high voltage - high power gan-hemt EGNB090MK edition 1.2 mar. 2010 5 mk package outline metal-ceramic hermetic package
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