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1 sp2209e ds/06 sp2209e high esd dual port rs-232 transceivers ? copyright 2000 sipex corporation description the rugged, high esd sp2209e device is a complete dual rs-232 port integrated onto a single integrated circuit. six drivers and ten receivers provide designers a dual port solution fully meeting the eia/tia-232 and itu-t v.28/v.24 communication protocols and can be implemented in applications such as personal desktop computers and workstations. features include high transmission rates, low power consumption, an internal charge-pump power supply that requires only two capacitors, space saving 38-pin tssop package dimensions, and compatibility with the eu directive on electromagnetic compatibility. this device is ideal for operation in electrically harsh environments or where rs-232 cables are frequently being plugged and unplugged. this device is also immune to high rf field strengths without special shielding precautions. sp2209e high esd dual port rs-232 transceiver n meets true eia/tia-232-f standards n complies with 89/336/eec emc directive n single +12v power supply n <5ma low power cmos operation n 100 m a low standby current n operates with +3v or +5v logic n allows +3.3v to +5v standby supply n two complete serial ports, 6 drivers and 10 receivers n one receiver on each port active in standby n failsafe receiver outputs n 460kbps minimum data rate n guaranteed laplink ? - compatible n ideal for high speed rs-232 applications n 0.1 m f charge pump capacitors n low emi emissions (en55022) n pin compatible to adm2209e device n enhanced esd specifications: +15kv human body model +15kv en61000-4-2 air discharge +8kv en61000-4-2 contact discharge n fast transient burst (eft) immunity (en61000-4-2) ?
sp2209e ds/06 sp2209e high esd dual port rs-232 transceivers ? copyright 2000 sipex corporation 2 absolute maximum ratings these are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. exposure to absolute maximum rating conditions for extended periods of time may affect reliability and cause permanent damage to the device. v dd ...................................................... -0.3v to +14.0v v stby ........................................................ -0.3v to +7v input voltages t x ina........................................-0.3v to (v stby + 0.3v) t x inb........................................-0.3v to (v stby + 0.3v) r x ina.................................................................. +15v r x inb.................................................................. +15v unless otherwise noted, the following specifications apply for v dd = +12.0v + 10%, v stby = +3.3v + 5% or +5v + 10%, c1 = c2 = 0.1 m f, and t amb = t min to t max . specifications output voltages t x outa.............................................................. +15v t x outb.............................................................. +15v r x outa...................................-0.3v to (v stby + 0.3v) r x outb...................................-0.3v to (v stby + 0.3v) short-circuit duration t x outa....................................................continuous t x outb....................................................continuous storage temperature........................-65 c to +150 c power dissipation per package 38-pin tssop (derate 14.3mw/ o c above +70 o c).. ...1200mw r e t e m a r a p. n i m. p y t. x a ms t i n us n o i t i d n o c s c i t s i r e t c a r a h c c d t n e r r u c y l p p u s5a m , v 1 . 2 r o v 4 . 0 t a s t u p n i r e v i r d l l a , d a o l o n v 5 1 - r o v 5 1 + t a s t u p n i r e v i e c e r l l a v , t n e r r u c y l p p u s y b d n a t s y b t s 0 0 10 0 2 m a v t a s t u p n i r e v i r d l l a , d a o l o n y b t s n e p o r o e g a t l o v d l o h s e r h t c i g o l t u p n i w o l h g i h1 . 2 4 . 0vt b m a 5 2 = o c t n e r r u c e g a k a e l t u p n i0 15 2 m a v 0 t a t u p n i r e v i r d w o l e g a t l o v t u p t u o2 . 04 . 0vi l o a m 6 . 1 + = h g i h e g a t l o v t u p t u o4 . 2vi h o 0 4 - = m a t n e r r u c e g a k a e l t u p t u o+ 5 0 . 0+ 5 m a v d d r t p e c x e ( , v 0 = 5 r d n a a t u o 5 ) b t u o cmos logic inputs and receiver outputs
3 sp2209e ds/06 sp2209e high esd dual port rs-232 transceivers ? copyright 2000 sipex corporation specifications (continued) unless otherwise noted, the following specifications apply for v dd = +12.0v + 10%, v stby = +3.3v + 5% or +5v + 10%, c1 = c2 = 0.1 m f, and t amb = t min to t max . parameter min. typ. max. units conditions kbps driver outputs output voltage swing +5.0 +9.0 v all driver outputs loaded with 3k w to gnd output resistance 300 w v dd = v stby = 0v, v out = +2v output short-circuit current +5 +15 +30 ma one driver output shorted, v in = 0.8v, v out = 0v receiver inputs input voltage range -15 +15 v input threshold low 0.4 1.45 v input threshold high 1.7 2.4 v input hysteresis 0.25 v input resistance 3 5 7 k w v in = +15v timing characteristics driver maximum data rate 460 r l = 3k w to 7k w , c l = 50pf to 470pf 460 r l = 3k w to 7k w , c l = 50pf to 1000pf kbps t amb = 0 o c to +85 o c, v stby = 5v + 10% only 920 r l = 3k w to 7k w , c l = 50pf to 470pf, v stby = 5v + 5%, v dd = 12v + 5% driver propagation delay t phl 1.0 m sr l = 3k w , c l = 1000pf, refer to figures 3 and 5 t plh 1.0 r l = 3k w , c l = 1000pf, refer to figures 3 and 5 driver transition-region 6 16 r l = 3k w to 7k w , c l = 50pf to 470pf slew rate 4 16 v/ m sr l = 3k w to 7k w , c l = 50pf to 1000pf v stby = 5v + 10% only, measurements taken from -3.0v to +3.0v or +3.0v to -3.0v receiver maximum data rate 460 c l = 150pf 920 c l = 150pf, v stby = 5v + 5% only receiver propagation delay t phl (r1x - r4x) 0.4 0.75 c l = 150pf, refer to figures 4 and 6 t plh (r1x -r4x) 0.4 0.75 m sc l = 150pf, refer to figures 4 and 6 t phl (r5x) 1.0 2.0 c l = 150pf, refer to figures 4 and 6 t plh (r5x) 1.0 2.0 c l = 150pf, refer to figures 4 and 6 receiver output rise time 30 ns refer to figures 4 and 6 receiver output fall time 30 ns refer to figures 4 and 6 operating characteristics operating voltage range, v dd +10.8 +12.0 +13.2 v standby voltage range, v stby +3.15 +5.5 v operating temperature, t amb -40 +85 o c
sp2209e ds/06 sp2209e high esd dual port rs-232 transceivers ? copyright 2000 sipex corporation 4 table 1. device pin description e m a nn o i t c n u fr e b m u n n i p r 5 a t u o. a t r o p r o f t u p t u o r e v i e c e r l e v e l c i g o l s o m c / l t t v 5 + o t v 3 . 3 + 1 r 4 a t u o. a t r o p r o f t u p t u o r e v i e c e r l e v e l c i g o l s o m c / l t t v 5 + o t v 3 . 3 + 2 r 3 a t u o. a t r o p r o f t u p t u o r e v i e c e r l e v e l c i g o l s o m c / l t t v 5 + o t v 3 . 3 + 3 r 2 a t u o. a t r o p r o f t u p t u o r e v i e c e r l e v e l c i g o l s o m c / l t t v 5 + o t v 3 . 3 + 4 r 1 a t u o. a t r o p r o f t u p t u o r e v i e c e r l e v e l c i g o l s o m c / l t t v 5 + o t v 3 . 3 + 5 t 3 a n i. a t r o p r o f t u p n i r e v i r d l e v e l c i g o l s o m c / l t t v 5 + o t v 3 . 3 + 6 t 2 a n i. a t r o p r o f t u p n i r e v i r d l e v e l c i g o l s o m c / l t t v 5 + o t v 3 . 3 + 7 t 1 a n i. a t r o p r o f t u p n i r e v i r d l e v e l c i g o l s o m c / l t t v 5 + o t v 3 . 3 + 8 y b t sr s r e v i e c e r r o f y l p p u s r e w o p y b d n a t s v 5 + o t v 3 . 3 + 5 r d n a a t u o 5 . b t u o9 v d d y l p p u s r e w o p v 2 1 + 0 1 + c. r o t i c a p a c p m u p - e g r a h c 1 c d e z i r a l o p e h t r o f l a n i m r e t e v i t i s o p 1 1 t 1 b n i. b t r o p r o f t u p n i r e v i r d l e v e l c i g o l s o m c / l t t v 5 + o t v 3 . 3 + 2 1 t 2 b n i. b t r o p r o f t u p n i r e v i r d l e v e l c i g o l s o m c / l t t v 5 + o t v 3 . 3 + 3 1 t 3 b n i. b t r o p r o f t u p n i r e v i r d l e v e l c i g o l s o m c / l t t v 5 + o t v 3 . 3 + 4 1 r 1 b t u o. b t r o p r o f t u p t u o r e v i e c e r l e v e l c i g o l s o m c / l t t v 5 + o t v 3 . 3 + 5 1 r 2 b t u o. b t r o p r o f t u p t u o r e v i e c e r l e v e l c i g o l s o m c / l t t v 5 + o t v 3 . 3 + 6 1 r 3 b t u o. b t r o p r o f t u p t u o r e v i e c e r l e v e l c i g o l s o m c / l t t v 5 + o t v 3 . 3 + 7 1 r 4 b t u o. b t r o p r o f t u p t u o r e v i e c e r l e v e l c i g o l s o m c / l t t v 5 + o t v 3 . 3 + 8 1 r 5 b t u o. b t r o p r o f t u p t u o r e v i e c e r l e v e l c i g o l s o m c / l t t v 5 + o t v 3 . 3 + 9 1 r 5 b n i. b t r o p r o f t u p n i r e v i e c e r 2 3 2 - s r 0 2 r 4 b n i. b t r o p r o f t u p n i r e v i e c e r 2 3 2 - s r 1 2 r 3 b n i. b t r o p r o f t u p n i r e v i e c e r 2 3 2 - s r 2 2 r 2 b n i. b t r o p r o f t u p n i r e v i e c e r 2 3 2 - s r 3 2 r 1 b n i. b t r o p r o f t u p n i r e v i e c e r 2 3 2 - s r 4 2 t 3 b t u o. b t r o p r o f t u p t u o r e v i r d 2 3 2 - s r 5 2 t 2 b t u o. b t r o p r o f t u p t u o r e v i r d 2 3 2 - s r 6 2 t 1 b t u o. b t r o p r o f t u p t u o r e v i r d 2 3 2 - s r 7 2 d n g. d n u o r g 8 2 - c. r o t i c a p a c p m u p - e g r a h c 1 c d e z i r a l o p e h t r o f l a n i m r e t e v i t a g e n 9 2 - v l a n i m r e t e v i t a g e n e h t t a p m u p e g r a h c e h t y b d e t a r e n e g t u p t u o v 2 1 - . r o t i c a p a c p m u p - e g r a h c 2 c d e z i r a l o p e h t f o 0 3
5 sp2209e ds/06 sp2209e high esd dual port rs-232 transceivers ? copyright 2000 sipex corporation figure 1. sp2209e pinout configuration r 4 inb 1 2 3 4 5 6 7 c- r 1 inb r 2 inb r 3 inb t 3 inb 8 9 10 11 12 13 14 t 1 outb t 2 outb t 3 outb t 1 inb t 2 inb r 5 inb sp2209e t 1 ina 15 16 17 18 19 t 2 outa t 1 outa t 3 ina t 2 ina 25 26 27 28 24 23 22 v dd v- 20 21 c+ 34 35 36 37 33 32 31 stby gnd 29 30 38 r 5 outa r 4 outa r 3 outa r 2 outa r 1 outa r 1 outb r 2 outb r 3 outb r 4 outb r 5 outb t 3 outa r 1 ina r 3 ina r 2 ina r 5 ina r 4 ina table 1. device pin description (continued) e m a nn o i t c n u fr e b m u n n i p t 1 a t u o. a t r o p r o f t u p t u o r e v i r d 2 3 2 - s r 1 3 t 2 a t u o. a t r o p r o f t u p t u o r e v i r d 2 3 2 - s r 2 3 t 3 a t u o. a t r o p r o f t u p t u o r e v i r d 2 3 2 - s r 3 3 r 1 a n i. a t r o p r o f t u p n i r e v i e c e r 2 3 2 - s r 4 3 r 2 a n i. a t r o p r o f t u p n i r e v i e c e r 2 3 2 - s r 5 3 r 3 a n i. a t r o p r o f t u p n i r e v i e c e r 2 3 2 - s r 6 3 r 4 a n i. a t r o p r o f t u p n i r e v i e c e r 2 3 2 - s r 7 3 r 5 a n i. a t r o p r o f t u p n i r e v i e c e r 2 3 2 - s r 8 3
sp2209e ds/06 sp2209e high esd dual port rs-232 transceivers ? copyright 2000 sipex corporation 6 figure 2. sp2209e typical operating circuit sp2209e 29 11 30 10 5k w 5k w 5k w 5k w 5k w c+ c- v- v dd 8 7 6 5 4 3 2 1 0.1 m f 0.1 m f + + 0.1 m f 31 32 33 34 35 36 37 38 rs-232 outputs rs-232 inputs ttl/cmos inputs ttl/cmos outputs +12v t 1 ina r 1 outa r 1 ina t 2 outa t 2 ina t 3 ina t 3 outa t 1 outa r 2 ina r 3 ina r 4 ina r 5 ina r 2 outa r 3 outa r 4 outa r 5 outa 5k w 5k w 5k w 5k w 5k w 12 13 14 15 16 17 18 19 27 26 25 24 23 22 21 20 rs-232 outputs rs-232 inputs ttl/cmos inputs ttl/cmos outputs t 1 inb r 1 outb r 1 inb t 2 outb t 2 inb t 3 inb t 3 outb t 1 outb r 2 inb r 3 inb r 4 inb r 5 inb r 2 outb r 3 outb r 4 outb r 5 outb gnd 28 + +3.3v 9 400k w 400k w 400k w 400k w 400k w 400k w 0.1 m f + stby c2 c1
7 sp2209e ds/06 sp2209e high esd dual port rs-232 transceivers ? copyright 2000 sipex corporation description the sp2209e device is a rugged, high esd, complete dual rs-232 port integrated onto a single integrated circuit. six drivers and ten receivers provide a dual port solution fully meeting the eia/tia-232 and itu-t v.28/v.24 communication protocols and can be implemented in applications such as personal desktop computers and workstations. refer to figure 2 for a typical operating circuit. features include high transmission rates, low power consumption, space saving package dimensions, and compatibility with the eu directive on electromagnetic compatibility. em compatibility includes protection against radiated and conducted interference including high levels of electrostatic discharge. this device is ideal for operation in electrically harsh environments or where rs-232 cables are frequently being plugged and unplugged. this device is also immune to high rf field strengths without special shielding precautions. emissions are also controlled to within very strict limits. the sp2209e device features the inverter portion of sipex's proprietary and patented (u.s. 5,306,954) on-board charge pump circuitry that generates a -9v voltage level from a single +12v power supply. the sp2209e device can operate at data rates of at least 460kbps fully loaded. its low power cmos operation makes the sp2209e device an ideal choice for power sensitive designs. the sp2209e device has two receivers, one for each rs-232 port, that remains active in the standby mode to allow the monitoring of peripheral devices while the rest of the system is in a power-saving standby mode. this allows the sp2209e device to wake up the entire system when any communication is initiated in peripheral devices. the sp2209e device has a low standby current of 100 m a. theory of operation the sp2209e device is made up of four basic circuit blocks: 1. drivers, 2. receivers, 3. the sipex proprietary charge pump, and 4. standby circuitry. drivers the drivers are inverting level transmitters that convert ttl or cmos logic levels to eia/tia-232 levels with an inverted sense relative to the input logic levels. with v dd = +12v, the typical rs-232 output voltage swing is +9v with no load and +5v minimum fully loaded. unused driver input may be left unconnected with an internal pull-up resistor pulling the inputs high forcing the driver outputs into a low state. the driver outputs are protected against infinite short-circuits to ground without degradation in reliability. these drivers comply with the eia-tia-232f and all previous rs-232 versions. the drivers typically can operate at a minimum data rate of 460kbps fully loaded with 3k w in parallel with 1000pf, ensuring compatibility with pc-to-pc communication software. the sp2209e device is ideal for the new generation modem standards which require data rates greater than 460kbps. refer to figures 3 and 5 for driver propagation delay test circuit and waveforms, respectively. receivers the receivers convert eia/tia-232 levels to ttl or cmos logic output levels. should an unused receiver input be left unconnected, an internal 5k w pulldown resistor to ground will commit the output of the receiver to a high state. receiver inputs are also protected against overvoltages of up to +15v. refer to figures 4 and 6 for receiver propagation delay test circuit and waveforms, respectively.
sp2209e ds/06 sp2209e high esd dual port rs-232 transceivers ? copyright 2000 sipex corporation 8 a c 3k w 1000pf v out v in t x +3v 0v driver output v oh v ol 1.5v 1.5v t phl t plh t skew = | t phl - t plh | driver input t f +3v 0v -3v +3v -3v t r data t ransmission rate > 460kbps, t f < 5ns, t r < 5ns a c 150pf v out v in r x +3v -3v receiver output v oh v ol 0v 0v t phl t plh t skew = | t phl - t plh | receiver input t f 80% 50% 20% 80% 20% t r data t ransmission rate > 460kbps, t f < 200ns, t r < 200ns figure 3. driver propagation delay and transition time test circuit figure 4. receiver propagation delay and transition time test circuit figure 5. driver propagation delays figure 6. receiver propagation delays
9 sp2209e ds/06 sp2209e high esd dual port rs-232 transceivers ? copyright 2000 sipex corporation one receiver in each rs-232 port can be kept active by a low current, +3.3v to +5v power supply while the rest of the channels are pow- ered down. this allows the sp2209e device to monitor peripheral devices while the rest of the system is in a power-saving standby mode. the sp2209e device can be implemented as a power management device to wake up the entire system when any communication is initiated in peripheral devices. the sp2209e device has a low standby current of 100 m a. since receiver input is usually from a transmission line where long cable lengths and system interference can degrade the signal, the inputs have a typical hysteresis margin of 300mv. this ensures that the receiver is virtually immune to noisy transmission lines and inputs with slow transition times. charge pump the charge pump is a sipex Cpatented design (u.s. 5,306,954) and uses a unique approach compared to older lessCefficient designs. the charge pump requires two external capacitors using a twoCphase voltage shifting technique with a 200khz internal oscillator to attain a -9v power supply. refer to figure 7 for the internal charge pump circuit. the internal power supply consists of a charge pump that provides output voltages of at least +5v regardless of the input voltage (v dd ). this is important to maintain compliant rs-232 levels regardless of power supply fluctuations. a description of each phase follows. c1 c2 s1 s2 s4 s3 c2- v dd v c2- = -v dd figure 7. charge pump circuit figure 8. charge pump waveforms
sp2209e ds/06 sp2209e high esd dual port rs-232 transceivers ? copyright 2000 sipex corporation 10 esd tolerance the sp2209e device incorporates ruggedized esd cells on all driver output and receiver input pins. the esd structure is improved over our previous family for more rugged applications and environments sensitive to electro-static phase 1 v dd charge storage s1 and s2 are closed. s3 and s4 are open. during this phase of the clock cycle, the positive side of capacitor, c1, is connected to v dd . the negative side of c1 is connected to gnd. c1 is charged to +v dd . phase 2 v dd transfer s1 and s2 are open. s3 and s4 are closed. the negative side of the capacitor, c2, is connected to c2-. the positive side of c2 is connected to gnd. this transfers a negative generated voltage to c2. a negative voltage is built up on the negative side of c2 with each cycle of the oscillator. if the current drawn is small, the output voltage at c2- will be close to -v dd . as the current drawn at c2- increases, the output voltage will decrease in magnitude. the charge pump cycle will continue as long as the operational conditions for the internal oscillator are present. refer to figure 8 for the internal charge pump waveforms. standby circuitry the sp2209e device incorporates power saving, on board standby circuitry. the standby current is typically less than 100 m a. the sp2209e device automatically enters a standby mode when the v dd power supply is removed. an internal comparator generates an internal shutdown signal that disables the internal oscillator disengaging the charge pump. refer to figure 9 for the internal standby detection circuit. the inverted output v- goes to ground. all driver outputs are disabled. the inputs of receivers 1 through 4 for both ports a and b are at high impedance. receiver 5 for both ports a and b remain fully active as power management receiver lines to system peripherals that may come online during the standby mode. v dd v stby internal shutdown signal figure 9. internal standby detection circuit discharges and associated transients. the improved esd tolerance is at least +15kv without damage nor latch-up. there are different methods of esd testing applied: a) mil-std-883, method 3015.7 b) en61000-4-2 air-discharge c) en61000-4-2 direct contact the human body model has been the generally accepted esd testing method for semiconductors. this method is also specified in mil-std-883, method 3015.7 for esd testing. the premise of this esd test is to simulate the human bodys potential to store electro-static energy and discharge it to an integrated circuit. the simulation is performed by using a test model as shown in figure 10 . this method will test the ics capability to withstand an esd transient during normal handling such as in manufacturing areas where the ics tend to be handled frequently. the en61000-4-2, formerly iec801-2, is generally used for testing esd on equipment and systems. for system manufacturers, they must guarantee a certain amount of esd protection since the system itself is exposed to the outside environment and human presence. the premise with en61000-4-2 is that the system is required to withstand an amount of static electricity when esd is applied to points and surfaces of the
11 sp2209e ds/06 sp2209e high esd dual port rs-232 transceivers ? copyright 2000 sipex corporation equipment that are accessible to personnel during normal usage. the transceiver ic receives most of the esd current when the esd source is applied to the connector pins. the test circuit for en61000-4-2 is shown on figure 11 . there are two methods within en61000-4-2, the air discharge method and the contact discharge method. with the air discharge method, an esd voltage is applied to the equipment under test (eut) through air. this simulates an electrically charged person ready to connect a cable onto the rear of the system only to find an unpleasant zap just before the person touches the back panel. the high energy potential on the person discharges through an arcing path to the rear panel of the system before he or she even touches the system. this energy, whether discharged directly or through air, is predominantly a function of the discharge current rather than the discharge voltage. variables with an air discharge such as approach speed of the object carrying the esd potential to the system and humidity will tend to change the discharge current. for example, the rise time of the discharge current varies with the approach speed. the contact discharge method applies the esd current directly to the eut. this method was devised to reduce the unpredictability of the esd arc. the discharge current rise time is constant since the energy is directly transferred without the air-gap arc. in situations such as hand held systems, the esd charge can be directly discharged to the equipment from a person already figure 10. esd test circuit for human body model holding the equipment. the current is transferred on to the keypad or the serial port of the equipment directly and then travels through the pcb and finally to the ic. the circuit model in figures 10 and 11 represent the typical esd testing circuit used for all three methods. the c s is initially charged with the dc power supply when the first switch (sw1) is on. now that the capacitor is charged, the second switch (sw2) is on while sw1 switches off. the voltage stored in the capacitor is then applied through r s , the current limiting resistor, onto the device under test (dut). in esd tests, the sw2 switch is pulsed so that the device under test receives a duration of voltage. for the human body model, the current limiting resistor (r s ) and the source capacitor (c s ) are 1.5k w an 100pf, respectively. for en61000-4-2, the current limiting resistor (r s ) and the source capacitor (c s ) are 330 w an 150pf, respectively. the higher c s value and lower r s value in the en61000-4-2 model are more stringent than the human body model. the larger storage capacitor injects a higher voltage to the test point when sw2 is switched on. the lower current limiting resistor increases the current charge onto the test point. applications with six drivers and ten receivers, the sp2209e device is ideal for applications requiring two rs-232 ports such as in desktop or portable computers. refer to figure 13 . for typical db9 serial ports for data terminal equipment (dte) r r c c c c s s r r s s sw1 sw1 sw2 sw2 r c device under test dc power source c s r s sw1 sw2
sp2209e ds/06 sp2209e high esd dual port rs-232 transceivers ? copyright 2000 sipex corporation 12 device pin human body iec1000-4-2 tested model air discharge direct contact level driver outputs +15kv +15kv +8kv 4 receiver inputs +15kv +15kv +8kv 4 figure 11. esd test circuit for en61000-4-2 table 2. transceiver esd tolerance levels to data circuit terminating equipment (dce) interface implementation, 2 data lines, txd and rxd, and 6 control lines, rts, dtr, dsr, cts, and ri, are required. the straight-through pinout for data lines in the sp2209e device allows a simplified pcb layout allowing ground lines to separate the signal lines and ground planes to be placed beneath the ic without the complication of a multi-layer pcb layout. a receiver from each port, r 5 ina and r 5 inb, are active while the rest of the channels are powered down. this allows the sp2209e device to monitor peripheral devices while the rest of the system is in a power-saving standby mode. fail-safe receiver outputs are pulled high if the receiver inputs are left unconnected or at zero input. the sp2209e device can be implemented as a power management device to wake up the entire system when any communication is initiated in peripheral devices. the sp2209e device has a low standby current of 100 m a. a standard serial mouse can be powered from the sp2209e drivers. two driver outputs connected in parallel and set to v oh can be used to supply power to the v+ pin of the mouse. the third driver is set to vol to link current from the v- terminal. typical mouse specifications are 10ma at +6v and 5ma at -6v. laplink compatibility the sp2209e can operate up to 460kbps data rate under maximum driveload conditions of c l = 1000pf and r l = 3k w at minimum power supply voltages. r r s s and and r r v v add up to 330 add up to 330 w w f f or iec1000-4-2. or iec1000-4-2. r s and r v add up to 330 w for iec1000-4-2. contact-discharge module contact-discharge module r r v v r r c c c c s s r r s s sw1 sw1 sw2 sw2 r c device under test dc power source c s r s sw1 sw2 r v contact-discharge module figure 12. esd test waveform for en61000-4-2 t=0ns t=30ns 0a 15a 30a t i
13 sp2209e ds/06 sp2209e high esd dual port rs-232 transceivers ? copyright 2000 sipex corporation figure 13. dual serial port application with two db9 connectors 6 7 8 9 1 2 3 4 5 db-9 connector com1 5k w 5k w 5k w 5 4 3 34 35 36 r 1 outa r 1 ina r 2 ina r 3 ina r 2 outa r 3 outa 8 7 31 32 t 1 ina t 2 outa t 2 ina t 1 outa 6 33 t 3 ina t 3 outa 5k w 2 37 r 4 ina r 4 outa 5k w 1 38 r 5 ina r 5 outa txd cts dtr ri rxd dsr dcd rts txd cts dtr ri rxd dsr dcd rts 6 7 8 9 1 2 3 4 5 db-9 connector com2 5k w 5k w 5k w 15 16 17 24 23 22 r 1 outb r 1 inb r 2 inb r 3 inb r 2 outb r 3 outb 12 13 27 26 t 1 inb t 2 outb t 2 inb t 1 outb 14 25 t 3 inb t 3 outb 5k w 18 21 r 4 inb r 4 outb 5k w 19 20 r 5 inb r 5 outb txd cts dtr ri rxd dsr dcd rts txd cts dtr ri rxd dsr dcd rts sp2209e super i/o chip 29 11 30 c+ c- v- 0.1 m f + 0.1 m f gnd 28 + stby 9 0.1 m f 10 v dd +3.3v to +5v 400k w 400k w 400k w 400k w 400k w 400k w 0.1 m f + +12v +
sp2209e ds/06 sp2209e high esd dual port rs-232 transceivers ? copyright 2000 sipex corporation 14 package: plastic thin small outline (tssop) dimensions (mm) minimum/maximum a a1 ? l b e a a1 b d e e e2 l ? e2 d (- /1.10) (0.05/0.15) (0.17/0.27) (9.60/9.80) (4.30/4.50) (0.50 bsc) (3.20 bsc) (0.50/0.75) 0 /8 38Cpin e
15 sp2209e ds/06 sp2209e high esd dual port rs-232 transceivers ? copyright 2000 sipex corporation model temperature range package types sp2209eey -40 c to +85 c 38-pin tssop ordering information corporation signal processing excellence sipex corporation reserves the right to make changes to any products described herein. sipex does not assume any liability aris ing out of the application or use of any product or circuit described hereing; neither does it convey any license under its patent rights nor the rights of others. sipex corporation headquarters and sales office 22 linnell circle billerica, ma 01821 tel: (978) 667-8700 fax: (978) 670-9001 e-mail: sales@sipex.com sales office 233 south hillview drive milpitas, ca 95035 tel: (408) 934-7500 fax: (408) 935-7600 please consult the factory for pricing and availability on a tape-on-reel option.

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