1 d a t a s h e e t : c 3 d 0 4 0 6 0 f r e v . d C3D04060F Csilicon carbide schottky diode z -r ec ? r ectifier (f ull -p ak ) v rrm = 600 v i f(avg) = 4 a q c = 8.5 nc features ? 600-volt schottky rectifer ? optimized for pfc boost diode application ? zero reverse recovery current ? zero forward recovery voltage ? high-frequency operation ? temperature-independent switching behavior ? extremely fast switching ? positive temperature coeffcient on v f ? fully isolated case benefts ? replace bipolar with unipolar rectifers ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway ? no additional isolation required applications ? switch mode power supplies ? power factor correction - typical pfc p out : 150w-300w ? motor drives package maximum ratings symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 600 v v rsm surge peak reverse voltage 600 v v dc dc blocking voltage 600 v i f(avg) average forward current 4 a t c =95?c, dc i frm repetitive peak forward surge current 21 13 a t c =25?c, t p = 10 ms, half sine wave, d=0.3 t c =110?c, t p = 10 ms, half sine wave, d=0.3 i fsm non-repetitive peak forward surge current 30 25 a t c =25?c, t p = 10 ms, half sine wave, d=0.3 t c =110?c, t p = 10 ms, half sine wave, d=0.3 i fsm non-repetitive peak forward surge current 110 a t c =25?c, t p = 10 s, pulse p tot power dissipation 13.1 5.7 w t c =25?c t c =110?c t j , t stg operating junction and storage temperature -55 to +175 ?c to-220 mounting torque 1 8.8 nm lbf-in m3 screw 6-32 screw pin 1 pin 2 case part number package marking C3D04060F to-220-f2 c3d04060 to-220-f2 subject to change without notice. www.cree.com
2 C3D04060F rev. d electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.5 1.8 1.7 2.4 v i f = 4 a t j =25c i f = 4 a t j =175c i r reverse current 10 20 50 100 a v r = 600 v t j =25c v r = 600 v t j =175c q c total capacitive charge 8.5 nc v r = 600 v, i f = 4 a d i /d t = 500 a/ s t j = 25c c total capacitance 251 22 21 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz note: 1. this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit r jc thermal resistance from junction to case 11.5 c/w typical performance 0 1 2 3 4 5 6 7 8 9 10 0 100 200 300 400 500 600 700 800 900 1000 i r reverse current (ua) v r reverse voltage (v) d4_25c d4_75c d4_125c d4_175c 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i f forward voltage (a) v f forward voltage (v) d1_25c d1_75c d1_125c d1_175c figure 1. forward characteristics figure 2. reverse characteristics t j = 25c t j = 75c t j = 125c t j = 175c i f forward current (a) v f forward voltage (v) 8 7 6 5 4 3 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 9 8 7 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 900 1000 t j = 25c t j = 75c t j = 125c t j = 175c i r reverse current ( a) v r reverse voltage (v)
3 C3D04060F rev. d 6 8 10 12 14 peak forward current (a) C3D04060F current derating 0 2 4 6 8 10 12 14 25 50 75 100 125 150 175 i f(peak) peak forward current (a) t c case temperature ( c) C3D04060F current derating typical performance 14 12 10 8 6 4 2 0 figure 3. current derating figure 4. capacitance vs. reverse voltage figure 5. transient thermal impedance 25 50 75 100 125 150 175 i f(peak) peak forward current (a) 20% duty* 30% duty* 50% duty* 70% duty* dc t c case temperature ( c ) * frequency > 1khz 1e1 1e0 e-1 e-2 1e-5 1e-4 1e-3 1e-2 1e-1 1e0 1e1 1e2 1e3 time (s) zth (c/w) 120 100 80 60 40 20 0 1 10 100 1000 c capacitance (pf) v r reverse voltage (v ) 0 20 40 60 80 100 120 1 10 100 1000 c capacitance (pf) v r reverse voltage (v) d3_4a_fp d3_4a_fp
4 C3D04060F rev. d 16 14 12 10 8 6 4 2 0 power dissipation (w) t c case temperature ( c ) 25 50 75 100 125 150 175 figure 6. power derating typical performance package dimensions package to-220-f2 pin 1 pin 2 case pos inches millimeters min max min max a .177 .193 4.5 4.9 b .092 .108 2.34 2.74 c .248 .272 6.3 6.9 d .098 .114 2.5 2.9 e .390 .406 9.9 10.3 f .118 .134 3.0 3.4 g .122 .137 3.1 3.5 h .617 .633 15.67 16.07 l .039 .055 1.0 1.4 m .016 .031 0.4 0.8 n .185 .217 4.7 5.5 p 0 .154 0 3.9 s .476 .508 12.1 12.9 t .016 .031 0.4 0.8 note: 1. dimension l, m, t apply for solder dip finish a b c d t e f g h l m n s p
5 5 C3D04060F rev. d this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems, or weapons systems. copyright ? 2009-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks and z-rec is a trademark of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power recommended solder pad layout part number package marking C3D04060F to-220-f2 c3d04060 the levels of environmentally sensitive, persistent biologically toxic (pbt), persistent organic pollutants (pop), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2002/95/ec on the restriction of the use of certain hazardous substances in electrical and electronic equipment (r ohs), as amended through april 21, 2006. to-220-f2 diode model v t r t diode model csd10060 vf t = v t + if*r t v t= 0.92 + (t j * - 1.35*10 - 3 ) r t= 0.052 + (t j * 0.29*10 - 3 ) note: t j = diode junction temperature in degrees celcius vf t = v t +if*r t v t = 0.98+(t j * -1.8*10 -3 ) r t = 0.10+(t j * 9.16*10 -4 )
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