2.1 - 115 2.1 100v thru 500v, up to 6 amp, three phase mosfet half bridge 4 11 r1 supersedes 1 06 r0 three phase mosfet half bridge in a plastic sip package features ? isolated high density, low profile package ? 6 mosfets per package ? fast switching, low drive current ? heat sinkable ? low r ds(on) ? p-channel also available description this series of three phase mosfet half bridge products feature the latest advanced mosfet and packaging technology. they are ideally suited where small size, high performance and high reliability are required in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. om6415sp3 om6416sp3 om6413sp3 OM6414SP3 part number v ds r ds(on) i d(max) om6413sp3 100v .085 6a OM6414SP3 200v .180 4a om6415sp3 400v .55 2.5a om6416sp3 500v .85 2a schematic pin connection g s d g s d g s d g s d g s d g s d 1 3 4 5 6 9 10 11 12 14 15 16 17 18 maximum ratings (per mosfet) pin 1: v cc pin 5: source pin 9: gate pin 13: n/c pin 17: drain/source pin 2: n/c pin 6: drain/source pin 10: gate pin 14: gate pin 18: v cc pin 3: gate pin 7: n/c pin 11: source pin 15: gate pin 4: gate pin 8: n/c pin 12: drain/source pin 16: source note: pin 1 and pin 18 are common 1357911131517 2 4 6 8 10 12 14 16 18
2.1 - 116 om6413sp3 - om6416sp3 2.1 electrical characteristics: t c = 25 unless otherwise noted electrical characteristics: t c = 25 unless otherwise noted static p/n om6413sp3 static p/n OM6414SP3 parameter min. typ. max. units test conditions parameter min. typ. max. units test conditions bv dss drain-source breakdown 100 v v gs = 0, bv dss drain-source breakdown 200 v v gs = 0, voltage i d = 250 m a voltage i d = 250 m a v gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 m av gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 m a i gssf gate-body leakage forward 100 na v gs = 20 v i gssf gate-body leakage forward 100 na v gs = 20 v i gssr gate-body leakage reverse -100 na v gs = - 20 v i gssr gate-body leakage reverse - 100 na v gs = - 20 v i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, t c = 100 c t c = 100 c i d(on) on-state drain current 1 6av ds 2 v ds(on) , v gs = 10 v i d(on) on-state drain current 1 4av ds 2 v ds(on) , v gs = 10 v v ds(on) static drain-source on-state 1.275 1.425 v v gs = 10 v, i d = 6 a v ds(on) static drain-source on-state 1.4 1.8 v v gs = 10 v, i d = 4 a voltage 1 voltage 1 r ds(on) static drain-source on-state .085 .095 v gs = 10 v, i d = 6 a r ds(on) static drain-source on-state 0.14 0.18 v gs = 10 v, i d = 4 a resistance 1 resistance 1 r ds(on) static drain-source on-state .130 .155 v gs = 10 v, i d = 6 a, r ds(on) static drain-source on-state 0.28 0.36 v gs = 10 v, i d = 4 a, resistance 1 t c = 100 c resistance 1 t c = 100 c dynamic dynamic g fs forward transductance 1 6.0 7.2 s v ds 2 v ds(on) , i d = 6 a g fs forward transductance 1 6.0 9.0 s v ds 2 v ds(on) , i d = 4 a c iss input capacitance 1275 1600 pf v gs = 0 c iss input capacitance 1000 1600 pf v gs = 0 c oss output capacitance 550 800 pf v ds = 25 v c oss output capacitance 250 750 pf v ds = 25 v c rss reverse transfer capacitance 160 300 pf f = 1 mhz c rss reverse transfer capacitance 100 300 pf f = 1 mhz t d(on) turn-on delay time 16 30 ns v dd = 30 v, i d @ 15 a t d(on) turn-on delay time 17 30 ns v dd = 75 v, i d @ 10 a t r rise time 19 60 ns r g = 5 w , r l = 2 w t r rise time 52 60 ns r g = 5 w , r l = 7.3 w t d(off) turn-off delay time 42 80 ns t d(off) turn-off delay time 36 80 ns t f fall time 24 30 ns t f fall time 30 60 ns body-drain diode ratings and characteristics body-drain diode ratings and characteristics i s continuous source current - 6 a modified mospower i s continuous source current - 4 a modified mospower (body diode) symbol showing (body diode) symbol showing i sm source current 1 - 20 a the integral p-n i sm source current 1 - 25 a the integral p-n (body diode) junction rectifier. (body diode) junction rectifier. v sd diode forward voltage 1 - 2.5 v t c = 25 c, i s = -12 a, v gs = 0 v sd diode forward voltage 1 - 2 v t c = 25 c, i s = -9 a, v gs = 0 t rr reverse recovery time 400 ns t j = 150 c,i f = i s ,t rr reverse recovery time 350 ns t j = 150 c,i f = i s , dl f /ds = 100 a/ m s dl f /ds = 100 a/ m s 1 pulse test: pulse width 300 m sec, duty cycle 2%. 1 pulse test: pulse width 300 m sec, duty cycle 2%. (mosfet) switching times are essentially independent of operating temperature. (mosfet) switching times are essentially independent of operating temperature. g d s g d s
2.1 - 117 om6413sp3 - om6416sp3 2.1 electrical characteristics: t c = 25 unless otherwise noted electrical characteristics: t c = 25 unless otherwise noted static p/n om6415sp3 static p/n om6416sp3 parameter min. typ. max. units test conditions parameter min. typ. max. units test conditions bv dss drain-source breakdown 400 v v gs = 0, bv dss drain-source breakdown 500 v v gs = 0, voltage i d = 250 m a voltage i d = 250 m a v gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 m av gs(th) gate-threshold voltage 2.0 4.0 v v ds = v gs , i d = 250 m a i gssf gate-body leakage forward 100 na v gs = 20 v i gssf gate-body leakage forward 100 na v gs = 20 v i gssr gate-body leakage reverse -100 na v gs = - 20 v i gssr gate-body leakage reverse - 100 na v gs = - 20 v i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 i dss zero gate voltage drain 0.1 0.25 ma v ds = max. rat., v gs = 0 current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, current 0.2 1.0 ma v ds = 0.8 max. rat., v gs = 0, t c = 100 c t c = 100 c i d(on) on-state drain current 1 2.5 a v ds 2 v ds(on) , v gs = 10 v i d(on) on-state drain current 1 2.0 a v ds 2 v ds(on) , v gs = 10 v v ds(on) static drain-source on-state 2.35 2.75 v v gs = 10 v, i d = 2.5 a v ds(on) static drain-source on-state 3.2 3.4 v v gs = 10 v, i d = 2 a voltage 1 voltage 1 r ds(on) static drain-source on-state 0.47 0.55 v gs = 10 v, i d = 2.5 a r ds(on) static drain-source on-state 0.8 0.85 v gs = 10 v, i d = 2 a resistance 1 resistance 1 r ds(on) static drain-source on-state 0.93 1.10 v gs = 10 v, i d = 2.5 a, r ds(on) static drain-source on-state 1.50 1.65 v gs = 10 v, i d = 2 a, resistance 1 t c = 100 c resistance 1 t c = 100 c dynamic dynamic g fs forward transductance 1 4.0 4.4 s v ds 2 v ds(on) , i d = 2.5 a g fs forward transductance 1 4.0 4.8 s v ds 2 v ds(on) , i d = 2 a c iss input capacitance 1150 1600 pf v gs = 0 c iss input capacitance 1225 1600 pf v gs = 0 c oss output capacitance 165 450 pf v ds = 25 v c oss output capacitance 200 350 pf v ds = 25 v c rss reverse transfer capacitance 70 150 pf f = 1 mhz c rss reverse transfer capacitance 85 150 pf f = 1 mhz t d(on) turn-on delay time 17 35 ns v dd = 175 v, i d @ 5 a t d(on) turn-on delay time 17 35 ns v dd = 200 v, i d @ 4 a t r rise time 12 15 ns r g = 5 w , r l = 35 w t r rise time 5 15 ns r g = 5 w , r l = 49 w t d(off) turn-off delay time 45 90 ns t d(off) turn-off delay time 42 90 ns t f fall time 30 35 ns t f fall time 14 30 ns body-drain diode ratings and characteristics body-drain diode ratings and characteristics i s continuous source current - 2.5 a modified mospower i s continuous source current - 2 a modified mospower (body diode) symbol showing (body diode) symbol showing i sm source current 1 - 10 a the integral p-n i sm source current 1 - 8 a the integral p-n (body diode) junction rectifier. (body diode) junction rectifier. v sd diode forward voltage 1 - 2 v t c = 25 c, i s = -5 a, v gs = 0 v sd diode forward voltage 1 - 2 v t c = 25 c, i s = -9 a, v gs = 0 t rr reverse recovery time 400 ns t j = 150 c,i f = i s ,t rr reverse recovery time 400 ns t j = 150 c,i f = i s , dl f /ds = 100 a/ m s dl f /ds = 100 a/ m s 1 pulse test: pulse width 300 m sec, duty cycle 2%. 1 pulse test: pulse width 300 m sec, duty cycle 2%. (mosfet) switching times are essentially independent of operating temperature. (mosfet) switching times are essentially independent of operating temperature. g d s g d s
om6413sp3 - om6416sp3 2.1 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 absolute maximum ratings (t c = 25c unless otherwise noted) parameter om6413 om6414 om6415 om6416 units v ds drain-source voltage 100 200 400 500 v v dgr drain-gate voltage (r gs = 1 m ) 100 200 400 500 v i d @ t c = 25c continuous drain current 6 4 2.5 2 a i dm pulsed drain current 1 30 25 20 15 a v gs gate-source voltage 20 20 20 20 v p d @ t c = 25c maximum power dissipation 50 50 50 50 w junction to case linear derating factor 0.5 0.5 0.5 0.5 w/c junction to ambient linear derating factor .020 .020 .020 .020 w/c t j operating and t stg storage temperature range -55 to 125 -55 to 125 -55 to 125 -55 to 125 c lead temperature (1/16" from case for 5 secs.) 225 225 225 225 c 1 pulse test: pulse width 300 sec. duty cycle 2%. 2 pan head screw, non-lubricated threads thermal resistance r thjc junction-to-case 2.00 c/w r thja junction-to-ambient 50 c/w free air operation mounting torque 3.0 lbf?in power rating mechanical outline .100 .100 17 plcs. .300 min. .400 .405 2.800 2.500 .810 .187 r 2 plcs. .075 r 2 plcs. .150 .150 .010 .060 .115 .240 max. .450 min. .018 18 plcs. 0 25 50 75 100 125 150 175 p d - power dissipation (watts) t c - case temperature (c) 150 125 100 75 50 25 0
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