schottky barrier diode RB751VM-40 l applications l dimensions (unit : mm) l land size figure (unit : mm) high speed switching l features 1)ultra small mold type. (umd2) 2)low i r 3)high reliability l construction silicon epitaxial l structure l taping specifications (unit : mm) l absolute maximum ratings (ta=25c) symbol unit v rm v v r v io ma i fsm ma tj c tstg c l electrical characteristics (ta=25c) symbol min. typ. max. unit conditions v f - - 0.37 v i f =1ma i r - - 0.5 a v r =30v ct - 2 - pf v r =1v , f=1mhz storage temperature - 40 to + 150 parameter forward voltage reverse current capacitance between terminals average rectified forward current 30 forward current surge peak (60hz ? 1cyc) 200 junction temperature 150 parameter limits reverse voltage (repetitive) 40 reverse voltage (dc) 30 rohm : umd2 jeita : sc - 901a jedec : sod - 323 dot (year week factory) umd2 1/3 2011.06 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. 0.30.05 0.70.2 0.1 0.10.1 0.05 1.70.1 2.50.2 1.250.1 2.1 0.8min. 0.9min. 4.00.1 2.00.05 1.550.05 1.400.1 4.00.1 1.05 2.75 3.50.05 1.750.1 8.00.2 0.30.1 1.00.1 2.80.1
RB751VM-40 0.00 0.01 0.02 0.03 0.04 0.05 0.00 0.01 0.02 0.03 0.04 0.05 sin( 180) d=1/2 dc 1 10 100 1000 0.001 0.1 10 1000 rth(j - a) rth(j - c) 0 5 10 15 20 0.1 1 10 100 t ifsm 0 5 10 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 100 200 300 400 500 600 700 800 900 1000 ave:245.0na ta=25 v r =30v n=30pcs 0 5 10 15 20 ave:3.24a 8.3ms ifsm 1cyc 250 260 270 280 290 300 310 320 ave:282.4mv ta=25 i f =1ma n=30pcs 0 1 2 3 4 5 6 7 8 9 10 ave:2.1pf ta=25 f=1mhz v r =1v n=10pcs 0.1 1 10 0 10 20 30 f=1mhz 0.001 0.01 0.1 1 10 100 1000 0 10 20 30 ta=125 ta=75 ta=25 ta= - 25 0.01 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 1000 ta=125 ta=75 ta=25 ta= - 25 forward voltage : v f (mv) v f - i f characteristics forward current:i f (ma) reverse current:i r (ua) reverse voltage : v r (v) v r - i r characteristics capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics v f dispersion map forward voltage:v f (mv) reverse current:i r (na) capacitance between terminals:ct(pf) ct dispersion map i fsm dispersion map peak surge forward current:i fsm (a) peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics time:t(s) rth - t characteristics transient thaermal impedance:rth ( /w) forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics mounted on epoxy board 0 5 10 15 20 25 30 ave:7.7ns trr dispersion map reverse recovery time:trr(ns) i f =0.1a i r =0.1a irrr=0.1 * i r i r dispersion map 2/3 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RB751VM-40 0 0.002 0.004 0.006 0.008 0.01 0 10 20 30 sin( 180) dc d=1/2 reverse power dissipation:p r (w) reverse voltage:v r (v) v r - p r characteristics ambient temperature:ta( ) derating curve (io - ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc( ) derating curve (io - tc) 0 0.02 0.04 0.06 0.08 0.1 0 25 50 75 100 125 150 sin( 180) d=1/2 dc 0.00 0.02 0.04 0.06 0.08 0.10 0 25 50 75 100 125 150 sin( 180) d=1/2 dc t tj=150 d=t/t t v r io v r =15v 0a 0v t tj=150 d=t/t t v r io v r =15v 0a 0v 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 ave:0.418kv ave:3.34kv c=100pf r=1.5k c=200pf r=0 electrostatic discharge test esd(kv) esd dispersion map 3/3 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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