vishay general semiconductor es1pb, es1pc & es1pd new product document number 88918 23-jun-06 www.vishay.com 1 high current density surface mount ultrafast rectifiers features ? very low profile - typical height of 1.0 mm ? ideal for automated placement ? glass passivated chip junction ? ultrafast recovery times for high efficiency ? low forward voltage, low power losses ? low thermal resistance ? meets msl level 1 per j-std-020c, lf max peak of 260 c ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in secondary rectification and free-wheeling for ultrafast switching speeds of ac-to-dc and dc-to-dc converters for both consumer and automotive applications. mechanical data case: do-220aa (smp) epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade polarity: color band denotes the cathode end do-220aa (smp) major ratings and characteristics i f(av) 1 a v rrm 100 v, 150 v, 200 v t rr 15 ns v f 0.92 v t j max. 150 c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol es1pb es1pc es1pd unit device marking code eb ec ed maximum repetitive peak reverse voltage v rrm 100 150 200 v maximum average forward rectified current (see fig. 1) i f(av) 1.0 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 30 a operating junction and storage temperature range t j , t stg - 55 to + 150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol value unit maximum instantaneous forward voltage at i f = 0.6 a, t j = 25 c at i f = 1 a, t j = 25 c v f 0.865 0.920 v maximum reverse current at rated v r (1) t j = 25 c t j = 125 c i r 5.0 500 a maximum reverse recovery time at i f = 0.5 a, i r = 1 a, i rr = 0.25 a t rr 15 ns
www.vishay.com 2 document number 88918 23-jun-06 vishay general semiconductor es1pb, es1pc & es1pd note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) thermal resistance from junction to ambient and junction to lead mounted on p.c.b. with 5.0 x 5.0 mm copper pad areas. r jl is measured at the terminal of cathode band. r jc is measured at the top centre of the body ratings and characteristics curves (t a = 25 c unless otherwise noted) typical reverse recovery time at i f = 1.0 a, v r = 30 v di/dt = 50 a/s, i rr = 10 % i rm t j = 25 c at i f = 1.0 a, v r = 30 v di/dt = 50 a/s, i rr = 10 % i rm t j = 100 c t rr 25 30 ns typical reverse recovery time at i f = 1.0 a, v r = 30 v di/dt = 50 a/s, i rr = 10 % i rm t j = 25 c at i f = 1.0 a, v r = 30 v di/dt = 50 a/s, i rr = 10 % i rm t j = 100 c q rr 8 10 nc typical junction capacitance at 4.0 v, 1 mhz c j 10 pf electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol value unit thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol es1pb es1pc es1pd unit typical thermal resistance (1) r ja r jl r jc 105 15 20 c/w ordering information preferred p/n unit weight (g) preferred package code base quantity delivery mode es1pb-e3/84a 0.024 84a 3000 7" diameter plastic tape & reel es1pb-e3/85a 0.024 85a 10000 13" diameter plastic tape & reel figure 1. maximum forward current derating curve 0 1.2 8 0 90 100 110 120 130 140 150 0. 8 1.0 0.2 0.4 0.6 lead temperat u re (c) a v erage for w ard rectified c u rrent (a) t l meas u red at the cathode b and terminal figure 2. maximum non-repetitive peak forward surge current 1 10 100 10 20 30 0 5 15 25 nu m b er of cycles at 50 hz peak for w ard s u rge c u rrent (a)
document number 88918 23-jun-06 www.vishay.com 3 es1pb, es1pc & es1pd vishay general semiconductor package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reverse leakage characteristics 0.4 0.6 0. 8 1.2 1.4 0.1 10 1 100 0.01 1.0 0.2 t j = 150 c t j = 125 c t j = 25 c instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 20 40 60 8 0 100 0.1 1 10 100 10 30 50 70 90 0.01 10000 1000 t j = 150 c t j = 125 c t j = 25 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) figure 5. typical junction capacitance figure 6. typical transient thermal impedance re v erse v oltage ( v ) j u nction capacitance (pf) 0.1 10 1 100 1 100 10 0.01 10 1 100 1 10 100 0.1 1000 t - p u lse d u ration (s) transient thermal impedance (c/ w ) 0.000 (0.00) 0.012 (0.30) 0.013 (0.35) 0.004 (0.10) 0.01 8 (0.45) 0.006 (0.15) 0.045 (1.15) 0.033 (0. 8 5) 0.036 (0.91) 0.024 (0.61) 0.016 (0.40) 0.032 (0. 8 0) 0.053 (1.35) 0.041 (1.05) 0.012 (0.30) ref 0.105 (2.67) 0.025 (0.635) 0.100 (2.54) 0.030 (0.762) 0.050 (1.27) cathode b and 0.142 (3.61) 0.126 (3.19) 0.15 8 (4.00) 0.146 (3.70) 0.0 8 6 (2.1 8 ) 0.074 (1. 88 ) 0.0 8 7 (2.20) 0.103 (2.60) do-220aa (smp)
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
|
