document number: 82395 for tec hnical questions, contact: emittertechsuppo rt@vishay.com www.vishay.com rev. 1.0, 13-oct-10 1 high speed infrared emitting diode, 850 nm, surface emitter technology VSLY3850 vishay semiconductors description VSLY3850 is an infrared, 850 nm emitting diode based on gaalas surface emitter chip technology with extreme high radiant intensity, high optica l power and high speed, molded in a clear, untinted t1 plastic package. features ? package type: leaded ? package form: t-1, clear epoxy ? dimensions: ? 3 mm ? peak wavelength: ? p = 850 nm ? high speed ? high radiant power ? high radiant intensity ? angle of half intensity: ? = 18 ? suitable for high pulse current operation ? good spectral matching with cmos cameras ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? infrared radiation source for operation with cmos cameras ? high speed ir data transmission ? 3d tv application ? light curtains note test conditions see table basic characteristics note moq: minimum order quantity 94 8636 product summary component i e (mw/sr) ? (deg) ? p (nm) t r (ns) VSLY3850 70 18 850 10 ordering information ordering code packaging remarks package form VSLY3850 bulk moq: 5000 pcs, 5000 pcs/bulk t-1 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1a power di ssipation p v 190 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t ? 5 s, 2 mm from case t sd 260 c thermal resistance juncti on/ambient j-std-051, leads 7 mm, soldered on pcb r thja 300 k/w
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 82395 2 rev. 1.0, 13-oct-10 VSLY3850 vishay semiconductors high speed infrared emitting diode, 850 nm, surface em itter technology fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward current limit vs. ambient temperature 0 20 40 60 80 100 120 140 160 180 200 0 10 20 30 40 50 60 70 80 90 100 22322 t amb - ambient temperature (c) p v - power di ss ipation (mw) r thja = 300 k/w 0 20 40 60 80 100 120 0 10 203040 50607080 90100 22323 r thja = 300 k/w t amb - ambient temperature (c) i f - forward current (ma) basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.65 1.9 v i f = 1 a, t p = 100 s v f 2.9 v temperature coefficient of v f i f = 1 ma tk vf - 1.45 mv/k i f = 10 ma tk vf - 1.25 mv/k reverse current i r not designed for reverse operation a junction capacitance v r = 0 v, f = 1 mhz, e = 0 mw/cm 2 c j 125 pf radiant intensity i f = 100 ma, t p = 20 ms i e 35 70 105 mw/sr i f = 1 a, t p = 100 s i e 600 mw/sr radiant power i f = 100 ma, t p = 20 ms ? e55mw temperature coefficient of radiant power i f = 1 ma tk ? e - 0.35 %/k angle of half intensity ? 18 deg peak wavelength i f = 30 ma ? p 840 850 870 nm spectral bandwidth i f = 30 ma ?? 30 nm temperature coefficient of ? p i f = 30 ma tk ? p 0.25 nm rise time i f = 100 ma, 20 % to 80 % t r 10 ns fall time i f = 100 ma, 20 % to 80 % t f 10 ns
document number: 82395 for tec hnical questions, contact: emittertechsuppo rt@vishay.com www.vishay.com rev. 1.0, 13-oct-10 3 VSLY3850 high speed infrared emitting diode, 850 nm, surface emitter technology vishay semiconductors basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - forward current vs. forward voltage fig. 4 - pulse forward current vs. pulse duration fig. 5 - radiant intensity vs. forward current fig. 6 - radiant power vs. forward current fig. 7 - relative radi ant power vs. wavelength fig. 8 - relative radiant in tensity vs. angular displacement v f - forward voltage (v) 22097 i f - forward current (a) 0.001 0.01 0.1 1 10 0 0.5 1 1.5 2 2.5 3 3.5 t p = 100 s 100 1000 0.01 0.1 1 10 100 t p - pulse duration (ms) 16031 t p /t = 0.01 0.05 0.2 0.5 0.1 0.02 t amb < 50 c i f - forward current (ma) i f - forward current (a) 21951 i e - radiant intensity (mw/sr) 0.1 1 10 100 1000 0.001 0.01 0.1 1 t p = 100 s 0.1 1 10 100 1000 11 0 100 1000 16971 i f - forward current (ma) - radiant power (mw) e - wavelength (nm) 21776-1 e, rel - relative radiant power 0 0.25 0.5 0.75 1 650 750 850 950 i f = 30 ma 21355 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 0 0.2 0.4 i e rel - relative radiant intensity ? - angular displacement
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 82395 4 rev. 1.0, 13-oct-10 VSLY3850 vishay semiconductors high speed infrared emitting diode, 850 nm, surface em itter technology package dimensions in millimeters 3.2 0.15 2.9 0.1 0.4 + 0.15 - 0.05 < 0.6 3.5 0.1 4.5 0.3 5.8 0.3 30.3 0.5 1.5 0.25 0.6 0.15 2.54 nom. drawing-no.: 6.544-5264.01-4 issue: 2; 23.04.98 specifications according to din technical drawings a c area not plane (2.5) r 1.4 (sphere) 95 10951
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