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p - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 3 - s e p . , 2 0 0 9 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 2 3 0 9 f e a t u r e s a p p l i c a t i o n s p o w e r m a n a g e m e n t i n n o t e b o o k c o m p u t e r , p o r t a b l e e q u i p m e n t a n d b a t t e r y p o w e r e d s y s - t e m s p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n - 3 0 v / - 2 . 2 a , r d s ( o n ) = 1 0 5 m w ( t y p . ) @ v g s = - 1 0 v r d s ( o n ) = 1 6 5 m w ( t y p . ) @ v g s = - 4 . 5 v s u p e r h i g h d e n s e c e l l d e s i g n r e l i a b l e a n d r u g g e d lead free and green devices available (rohs compliant) t o p v i e w o f s o t - 2 3 - 3 p - c h a n n e l m o s f e t g s d n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a - t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j - s t d - 0 2 0 d f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . a n p e c d e f i n e s ? g r e e n ? t o m e a n l e a d - f r e e ( r o h s c o m p l i a n t ) a n d h a l o g e n f r e e ( b r o r c l d o e s n o t e x c e e d 9 0 0 p p m b y w e i g h t i n h o m o g e n e o u s m a t e r i a l a n d t o t a l o f b r a n d c l d o e s n o t e x c e e d 1 5 0 0 p p m b y w e i g h t ) . d g s apm2309 handling code temperature range package code package code a : sot-23-3 operating junction temperature range c : -55 to 150 o c handling code tr : tape & reel assembly material g : halogen and lead free device apm2309 a : m09x x - date code assembly material
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 3 - s e p . , 2 0 0 9 w w w . a n p e c . c o m . t w 2 a p m 2 3 0 9 a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) symbol parameter rating unit v dss drain - source voltage - 30 v gss gate - source voltage 20 v i d * c ontinuous drain current - 2.2 i dm * pulsed drain current v gs = - 10 v - 9 a i s * diode c ontinuous f orward c urrent - 1 a t j maximum junction temperature 150 t stg storage temperature range - 55 to 150 c t a =25 c 0.83 p d * maximum power dissipation t a =100 c 0.3 w r q ja * thermal resistance - junction to ambient 150 c / w note : *surface mounted on 1in 2 pad area, t 10sec. apm 2309 symbol parameter test condition s min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds = - 250 m a - 30 - - v v ds = - 24 v, v gs =0v - - - 1 i dss zero gate voltage drain current t j =85 c - - - 30 m a v gs(th) gate threshold voltage v ds =v gs , i ds = - 250 m a - 1.3 - 1.8 - 2.5 v i gss gate leakage current v gs = 16 v, v ds =0v - - 10 m a v gs = - 10 v, i ds = - 2.2 a - 105 130 r ds(on) a drain - source on - s tate resistance v gs = - 4.5 v, i ds = - 1.7 a - 165 220 m w diode characteristics v sd a diod e forward voltage i sd = - 1 a, v gs =0v - - 0.8 - 1.1 v t rr reverse recovery time - 13 - ns q rr reverse recovery charge i s d = - 2.2a, dl s d /dt = 100a/ m s - 6 - nc
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 3 - s e p . , 2 0 0 9 w w w . a n p e c . c o m . t w 3 a p m 2 3 0 9 apm 2309 symbol parameter test condition s min. typ. max. unit dynamic characteristics b r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz - 11 - w c iss input capacitance - 310 - c oss output capacitance - 40 - c rss rev erse transfer capacitance v gs =0v, v ds = - 15v, f requency =1.0mhz - 25 - pf t d(on) turn - on delay time - 8 15 t r turn - on rise time - 12 23 t d(off) turn - off delay time - 18 33 t f turn - off fall time v dd = - 15 v, r l =1 5 w , i d s = - 1a, v gen = - 10v , r g =6 w - 3 6 ns gate charge characteristics b q g tot al gate charge - 6.4 9 q gs gate - source charge - 1.4 - q gd gate - drain charge v ds = - 15 v, v gs = - 10 v, i d s = - 2.2 a - 1.3 - nc n o t e a : p u l s e t e s t ; p u l s e w i d t h 3 0 0 m s , d u t y c y c l e 2 % . n o t e b : g u a r a n t e e d b y d e s i g n , n o t s u b j e c t t o p r o d u c t i o n t e s t i n g . e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 3 - s e p . , 2 0 0 9 w w w . a n p e c . c o m . t w 4 a p m 2 3 0 9 t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s -i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a - v d s - d r a i n - s o u r c e v o l t a g e ( v ) normalized transient thermal resistance t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) -i d - drain current (a) 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t a =25 o c 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 t a =25 o c,v g =-10v 0.1 1 10 100 0.01 0.1 1 10 50 300 m s rds(on) limit t a =25 o c 10ms 1ms 100ms dc 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 150 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 3 - s e p . , 2 0 0 9 w w w . a n p e c . c o m . t w 5 a p m 2 3 0 9 r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e - i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e - v d s - d r a i n - s o u r c e v o l t a g e ( v ) -i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s g a t e - s o u r c e o n r e s i s t a n c e - v g s - g a t e - s o u r c e v o l t a g e ( v ) r ds(on) - on - resistance (m w ) normalized threshold voltage 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 7 8 9 -4.5v -4v -3v -3.5v v gs =-5,-6,-7,-8,-9,-10v 0 1 2 3 4 5 6 7 8 9 60 80 100 120 140 160 180 200 220 240 v gs = -4.5v v gs = -10v 2 3 4 5 6 7 8 9 10 80 100 120 140 160 180 200 220 240 i d =-2.2a -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds = -250 m a t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 3 - s e p . , 2 0 0 9 w w w . a n p e c . c o m . t w 6 a p m 2 3 0 9 - v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (pf) - v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d -i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) -v gs - gate - source voltage (v) -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r on @t j =25 o c: 105m w v gs = -10v i ds = -2.2a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 t j =150 o c t j =25 o c 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 8 9 10 v ds = -10v i ds = -2.2a 0 5 10 15 20 25 30 0 50 100 150 200 250 300 350 400 450 frequency=1mhz crss coss ciss t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 3 - s e p . , 2 0 0 9 w w w . a n p e c . c o m . t w 7 a p m 2 3 0 9 p a c k a g e i n f o r m a t i o n sot-23-3 0 l view a 0 . 2 5 gauge plane seating plane a a 2 a 1 e d e e 1 see view a b c e1 max. 0.057 0.051 0.024 0.006 0.009 0.020 0.012 l 0.30 0 e e1 e1 e d c b 0.08 0.30 0.60 0.012 0.95 bsc 1.90 bsc 0.22 0.50 0.037 bsc 0.075 bsc 0.003 min. millimeters s y m b o l a1 a2 a 0.00 0.90 sot-2 3 -3 max. 1.45 0.15 1.30 min. 0.000 0.035 inches 8 0 8 0 1.40 2.60 1.80 3.00 2.70 3.10 0.122 0.071 0.118 0.102 0.055 0.106 note : dimension d and e1 do not include mold flash, protrusions or gate burrs. mold flash, protrusion or gate burrs shall not exceed 10 mil per side. -t- seating plane <4 mils
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 3 - s e p . , 2 0 0 9 w w w . a n p e c . c o m . t w 8 a p m 2 3 0 9 c a r r i e r t a p e & r e e l d i m e n s i o n s h t1 a d a e 1 a b w f t p0 od0 b a0 p2 k0 b 0 section b-b section a-a od1 p1 application a h t1 c d d w e1 f 178.0 ? 2.00 50 min. 8.4+2.00 - 0.00 13.0+0.50 - 0.20 1.5 min. 20.2 min. 8.0 ? 0.30 1.75 ? 0.10 3.5 ? 0.05 p 0 p1 p 2 d 0 d1 t a 0 b 0 k 0 so t - 23 - 3 4.0 ? 0.10 4.0 ? 0.10 2.0 ? 0.05 1.5+0.10 - 0.00 1.0 min. 0.6+0.00 - 0. 40 3.20 ? 0.20 3.10 ? 0.20 1.50 ? 0.20 (mm) package type unit quantity sot - 23 - 3 tape & reel 3000 d e v i c e s p e r u n i t
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 3 - s e p . , 2 0 0 9 w w w . a n p e c . c o m . t w 9 a p m 2 3 0 9 t a p i n g d i r e c t i o n i n f o r m a t i o m sot-23-3 user direction of feed c l a s s i f i c a t i o n p r o f i l e
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 3 - s e p . , 2 0 0 9 w w w . a n p e c . c o m . t w 1 0 a p m 2 3 0 9 c l a s s i f i c a t i o n r e f l o w p r o f i l e s profile feature sn - pb eutectic assembly pb - free assembly preheat & soak temperature min (t smin ) temperature max (t smax ) time (t smin to t smax ) ( t s ) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 1 2 0 seconds average ramp - up rate (t smax to t p ) 3 c/second ma x. 3 c/second max. liquidous temperature ( t l ) time at l iquidous (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak package body temperature (t p ) * see classification temp in table 1 see classification temp in table 2 time (t p ) ** within 5 c of the spec ified c lassification t emperature ( t c ) 2 0 ** seconds 3 0 ** seconds average r amp - down rate (t p to t smax ) 6 c/second max. 6 c/second max. time 25 c to p eak t emperature 6 minutes max. 8 minutes max. * tolerance for peak profile temperature (t p ) is defined a s a supplier minimum and a user maximum. ** tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. table 2. pb - free process ? classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 c 260 c 260 c 1.6 mm ? 2.5 mm 260 c 250 c 245 c 3 2.5 mm 250 c 245 c 245 c table 1. snpb eutectic process ? classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 235 c 22 0 c 3 2.5 mm 220 c 220 c r e l i a b i l i t y t e s t p r o g r a m test item method description solderability jesd - 22, b102 5 sec, 245 c holt jesd - 22, a108 1000 hrs, bias @ 125 c pct jesd - 22, a102 168 hrs, 100 % rh, 2atm , 121 c tct jesd - 22, a104 500 cycles, - 65 c~150 c
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 3 - s e p . , 2 0 0 9 w w w . a n p e c . c o m . t w 1 1 a p m 2 3 0 9 c u s t o m e r s e r v i c e a n p e c e l e c t r o n i c s c o r p . head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 t a i p e i b r a n c h : 2 f , n o . 1 1 , l a n e 2 1 8 , s e c 2 j h o n g s i n g r d . , s i n d i a n c i t y , t a i p e i c o u n t y 2 3 1 4 6 , t a i w a n t e l : 8 8 6 - 2 - 2 9 1 0 - 3 8 3 8 f a x : 8 8 6 - 2 - 2 9 1 7 - 3 8 3 8

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