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  ? 2003 ixys all rights reserved 1 - 2 hiperfred tm epitaxial diode with soft recovery features  international standard package minibloc  isolation voltage 2500 v~  ul registered e 72873  2 independent fred in 1 package  planar passivated chips  very short recovery time  extremely low switching losses  low i rm -values  soft recovery behaviour applications  antiparallel diode for high frequency switching devices  antisaturation diode  snubber diode  free wheeling diode in converters and motor control circuits  rectifiers in switch mode power supplies (smps)  inductive heating  uninterruptible power supplies (ups)  ultrasonic cleaners and welders advantages  avalanche voltage rated for reliable operation  soft reverse recovery for low emi/rfi  low i rm reduces: - power dissipation within the diode - turn-on loss in the commutating switch dimensions see outlines.pdf minibloc, sot-227 b pulse test:  pulse width = 5 ms, duty cycle < 2.0 %  pulse width = 300  s, duty cycle < 2.0 % data according to iec 60747 and per diode unless otherwise specified ixys reserves the right to change limits, test conditions and dimensions. dsep 2x 91-06a i fav = 2x 90 a v rrm = 600 v t rr = 35 ns v rsm v rrm type v v 600 600 dsep 2x 91-06a symbol conditions maximum ratings i frms 100 a i favm t c = 55c; rectangular, d = 0.5 90 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 1000 a e as t vj = 25c; non-repetitive 0.4 mj i as = 2 a; l = 180 h i ar v a = 1.5 v r typ.; f = 10 khz; repetitive 0.2 a t vj -40...+150 c t vjm 150 c t stg -40...+150 c p tot t c = 25c 200 w v isol 50/60 hz, rms 2500 v~ i isol  1 ma m d mounting torque (m4) 1.1-1.5/9-13 nm/lb.in. terminal connection torque (m4) 1.1-1.5/9-13 nm/lb.in. weight typical 30 g symbol conditions characteristic values typ. max. i r  t vj = 25c v r = v rrm 1ma t vj = 150c v r = v rrm 4ma v f  i f = 90 a; t vj = 125c 1.52 v t vj = 25c 2.05 v r thjc 0.6 k/w r thch 0.1 k/w t rr i f = 1 a; -di/dt = 400 a/  s; 35 ns v r = 30 v; t vj = 25c i rm v r = 100 v; i f = 200 a; -di f /dt = 100 a/  s 7.7 a t vj = 100c 329 6
? 2003 ixys all rights reserved 2 - 2 dsep 2x 91-06a 200 600 1000 0 400 800 90 100 110 120 130 140 150 0.00001 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.0 0.3 0.6 0.9 1.2 v fr di f /dt v 200 600 1000 0 400 800 0 20 40 60 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 012 0 25 50 75 100 125 150 i rm q r i f a v f -di f /dt -di f /dt a/ m s a v c a/ m s a/ m s t rr ns t fr a/ m s s dsep 2x91-06a z thjc i f = 180a i f = 90a i f = 45a t vj = 100 c v r = 300v t vj = 100 c i f = 90a fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f t vj = 100 c v r = 300v t vj = 100 c v r = 300v i f = 180a i f = 90a i f = 45a q r i rm fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt i f = 180a i f = 90a i f = 45a t fr v fr fig. 7 transient thermal resistance junction to case 329 t vj =150 c t vj =100 c t vj = 25 c constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.212 0.0055 2 0.248 0.0092 3 0.063 0.0007 4 0.077 0.0391 note: fig. 2 to fig. 6 shows typical values


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