p6ke6.8 thru p6ke540a vishay general semiconductor document number: 88369 revision: 22-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 t rans z orb ? transient voltage suppressors features ? glass passivated chip junction ? available in uni-directional and bi-directional ? 600 w peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. mechanical data case: do-204ac, molded epoxy over passivated chip molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs comp liant, commercial grade base p/nhe3 - rohs co mpliant, high reliability/ automotive grade (aec q101 qualified) terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix meets jesd 201 class 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test note: ? p6ke250 ~ p6ke540a and p6ke250c ~ p6ke440ca for commercial grade only polarity: for uni-directional types the color band denotes cathode end, no marking on bi-directional types devices for bi-direction applications for bi-directional types, use c or ca suffix (e.g. p6ke440ca). electrical characteristics apply in both directions. primary characteristics v br uni-directional 6.8 v to 540 v v br bi-directional 6.8 v to 440 v p ppm 600 w p d 5.0 w i fsm (uni-directional only) 100 a t j max. 175 c do-204ac (do-15) notes: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) measured on 8.3 ms single half sine-wave or equivalent square wave , duty cycle = 4 per minute maximum (3) v f = 3.5 v for p6ke220(a) and below; v f = 5.0 v for p6ke250(a) and above maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak power dissipation with a 10/1000 s waveform (1) (fig. 1) p ppm 600 w peak pulse current with a 10/1000 s waveform (1) i ppm see next table a power dissipation on infi nite heatsink at t l = 75 c (fig. 5) p d 5.0 w peak forward surge current, 8.3 ms single half sine-wave (2) i fsm 100 a maximum instantaneous forward voltage at 50 a for uni-directional only (3) v f 3.5/5.0 v operating junction and storage temperature range t j , t stg - 55 to + 175 c
p6ke6.8 thru p6ke540a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88369 revision: 22-oct-08 2 electrical characteristics (t a = 25 c unless otherwise noted) device type breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm (3) i d (a) peak pulse current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) maximum temperature coefficient of v br (%/c) min. max. (+) p6ke6.8 6.12 7.48 10 5.50 1000 55.6 10.8 0.057 (+) p6ke6.8a 6.45 7.14 10 5.80 1000 57.1 10.5 0.057 (+) p6ke7.5 6.75 8.25 10 6.05 500 51.3 11.7 0.061 (+) p6ke7.5a 7.13 7.88 10 6.40 500 53.1 11.3 0.061 (+) p6ke8.2 7.38 9.02 10 6.63 200 48.0 12.5 0.065 (+) p6ke8.2a 7.79 8.61 10 7.02 200 49.6 12.1 0.065 (+) p6ke9.1 8.19 10.0 1.0 7.37 50 43.5 13.8 0.068 (+) p6ke9.1a 8.65 9.55 1.0 7.78 50 44.8 13.4 0.068 (+) p6ke10 9.00 11.0 1.0 8.10 10 40.0 15.0 0.073 (+) p6ke10a 9.50 10.5 1.0 8.55 10 41.4 14.5 0.073 (+) p6ke11 9.90 12.1 1.0 8.92 5.0 37.0 16.2 0.075 (+) p6ke11a 10.5 11.6 1.0 9.40 5.0 38.5 15.6 0.075 (+) p6ke12 10.8 13.2 1.0 9.72 5.0 34.7 17.3 0.078 (+) p6ke12a 11.4 12.6 1.0 10.2 5.0 35.9 16.7 0.078 (+) p6ke13 11.7 14.3 1.0 10.5 5.0 31.6 19.0 0.081 (+) p6ke13a 12.4 13.7 1.0 11.1 5.0 33.0 18.2 0.081 (+) p6ke15 13.5 16.5 1.0 12.1 1.0 27.3 22.0 0.084 (+) p6ke15a 14.3 15.8 1.0 12.8 1.0 28.3 21.2 0.084 (+) p6ke16 14.4 17.6 1.0 12.9 1.0 25.5 23.5 0.086 (+) p6ke16a 15.2 16.8 1.0 13.6 1.0 26.7 22.5 0.086 (+) p6ke18 16.2 19.8 1.0 14.5 1.0 22.6 26.5 0.088 (+) p6ke18a 17.1 18.9 1.0 15.3 1.0 23.8 25.2 0.088 (+) p6ke20 18.0 22.0 1.0 16.2 1.0 20.6 29.1 0.090 (+) p6ke20a 19.0 21.0 1.0 17.1 1.0 21.7 27.7 0.090 (+) p6ke22 19.8 24.2 1.0 17.8 1.0 18.8 31.9 0.092 (+) p6ke22a 20.9 23.1 1.0 18.8 1.0 19.6 30.6 0.092 (+) p6ke24 21.6 26.4 1.0 19.4 1.0 17.3 34.7 0.094 (+) p6ke24a 22.8 25.2 1.0 20.5 1.0 18.1 33.2 0.094 (+) p6ke27 24.3 29.7 1.0 21.8 1.0 15.3 39.1 0.096 (+) p6ke27a 25.7 28.4 1.0 23.1 1.0 16.0 37.5 0.096 (+) p6ke30 27.0 33.0 1.0 24.3 1.0 13.8 43.5 0.097 (+) p6ke30a 28.5 31.5 1.0 25.6 1.0 14.5 41.4 0.097 (+) p6ke33 29.7 36.3 1.0 26.8 1.0 12.6 47.7 0.098 (+) p6ke33a 31.4 34.7 1.0 28.2 1.0 13.1 45.7 0.098 (+) p6ke36 32.4 39.6 1.0 29.1 1.0 11.5 52.0 0.099 (+) p6ke36a 34.2 37.8 1.0 30.8 1.0 12.0 49.9 0.099 (+) p6ke39 35.1 42.9 1.0 31.6 1.0 10.6 56.4 0.100 (+) p6ke39a 37.1 41.0 1.0 33.3 1.0 11.1 53.9 0.100 (+) p6ke43 38.7 47.3 1.0 34.8 1.0 9.7 61.9 0.101 (+) p6ke43a 40.9 45.2 1.0 36.8 1.0 10.1 59.3 0.101 (+) p6ke47 42.3 51.7 1.0 38.1 1.0 8.8 67.8 0.101 (+) p6ke47a 44.7 49.4 1.0 40.2 1.0 9.3 64.8 0.101
p6ke6.8 thru p6ke540a vishay general semiconductor document number: 88369 revision: 22-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 (+) p6ke51 45.9 56.1 1.0 41.3 1.0 8.2 73.5 0.102 (+) p6ke51a 48.5 53.6 1.0 43.6 1.0 8.6 70.1 0.102 (+) p6ke56 50.4 61.6 1.0 45.4 1.0 7.5 80.5 0.103 (+) p6ke56a 53.2 58.8 1.0 47.8 1.0 7.8 77.0 0.103 (+) p6ke62 55.8 68.2 1.0 50.2 1.0 6.7 89.0 0.104 (+) p6ke62a 58.9 65.1 1.0 53.0 1.0 7.1 85.0 0.104 (+) p6ke68 61.2 74.8 1.0 55.1 1.0 6.1 98.0 0.104 (+) p6ke68a 64.6 71.4 1.0 58.1 1.0 6.5 92.0 0.104 (+) p6ke75 67.5 82.5 1.0 60.7 1.0 5.6 108 0.105 (+) p6ke75a 71.3 78.8 1.0 64.1 1.0 5.8 103 0.105 (+) p6ke82 73.8 90.2 1.0 66.4 1.0 5.1 118 0.105 (+) p6ke82a 77.9 86.1 1.0 70.1 1.0 5.3 113 0.105 (+) p6ke91 81.9 100 1.0 73.7 1.0 4.6 131 0.106 (+) p6ke91a 86.5 95.5 1.0 77.8 1.0 4.8 125 0.106 (+) p6ke100 90.0 110 1.0 81.0 1.0 4.2 144 0.106 (+) p6ke100a 95.0 105 1.0 85.5 1.0 4.4 137 0.106 (+) p6ke110 99.0 121 1.0 89.2 1.0 3.8 158 0.107 (+) p6ke110a 105 116 1.0 94.0 1.0 3.9 152 0.107 (+) p6ke120 108 132 1.0 97.2 1.0 3.5 173 0.107 (+) p6ke120a 114 126 1.0 102 1.0 3.6 165 0.107 (+) p6ke130 117 143 1.0 105 1.0 3.2 187 0.107 (+) p6ke130a 124 137 1.0 111 1.0 3.4 179 0.107 (+) p6ke150 135 165 1.0 121 1.0 2.8 215 0.108 (+) p6ke150a 143 158 1.0 128 1.0 2.9 207 0.108 (+) p6ke160 144 176 1.0 130 1.0 2.6 230 0.108 (+) p6ke160a 152 168 1.0 136 1.0 2.7 219 0.108 (+) p6ke170 153 187 1.0 138 1.0 2.5 244 0.108 (+) p6ke170a 162 179 1.0 145 1.0 2.6 234 0.108 (+) p6ke180 162 198 1.0 146 1.0 2.3 258 0.108 (+) p6ke180a 171 189 1.0 154 1.0 2.4 246 0.108 (+) p6ke200 180 220 1.0 162 1.0 2.1 287 0.108 (+) p6ke200a 190 210 1.0 171 1.0 2.2 274 0.108 (+) p6ke220 198 242 1.0 175 1.0 1.7 344 0.108 (+) p6ke220a 209 231 1.0 185 1.0 1.8 328 0.108 (+) p6ke250 225 275 1.0 202 1.0 1.7 360 0.110 (+) p6ke250a 237 263 1.0 214 1.0 1.7 344 0.110 (+) p6ke300 270 330 1.0 243 1.0 1.4 430 0.110 (+) p6ke300a 285 315 1.0 256 1.0 1.4 414 0.110 (+) p6ke350 315 385 1.0 284 1.0 1.2 504 0.110 (+) p6ke350a 333 368 1.0 300 1.0 1.2 482 0.110 (+) p6ke400 360 440 1.0 324 1.0 1.0 574 0.110 (+) p6ke400a 380 420 1.0 342 1.0 1.1 548 0.110 electrical characteristics (t a = 25 c unless otherwise noted) device type breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm (3) i d (a) peak pulse current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) maximum temperature coefficient of v br (%/c) min. max.
p6ke6.8 thru p6ke540a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88369 revision: 22-oct-08 4 notes: (1) pulse test: t p 50 ms (2) surge current waveform per fig. 3 and derate per fig. 2ogm (3) for bi-directional types with v wm of 10 v and less, the i d limit is doubled (4) all terms and symbols are consistent with ansi/ieee c62.35 (+) underwriters laboratory recognition for the classification of protectors (qvgq2) under the ul standard for safety 497b and file number e136766 for both uni-directional and bi-directional devices note: (1) automotive grade aec-q101 qualified (+) p6ke440 396 484 1.0 356 1.0 0.95 631 0.110 (+) p6ke440a 418 462 1.0 376 1.0 1.00 602 0.110 p6ke480 432 528 1.0 389 1.0 0.88 686 0.110 p6ke480a 456 504 1.0 408 1.0 0.91 658 0.110 p6ke510 459 561 1.0 413 1.0 0.82 729 0.110 p6ke510a 485 535 1.0 434 1.0 0.86 698 0.110 p6ke540 486 594 1.0 437 1.0 0.78 772 0.110 p6ke540a 513 567 1.0 459 1.0 0.81 740 0.110 electrical characteristics (t a = 25 c unless otherwise noted) device type breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm (3) i d (a) peak pulse current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) maximum temperature coefficient of v br (%/c) min. max. thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit typical thermal resistance, junction to lead r jl 20 c/w typical thermal resistance, junction to ambient r ja 75 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode p6ke6.8a-e3/54 0.432 54 4000 13" diameter paper tape and reel p6ke6.8ahe3/54 (1) 0.432 54 4000 13" diameter paper tape and reel
p6ke6.8 thru p6ke540a vishay general semiconductor document number: 88369 revision: 22-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 5 ratings and characteristics curves (t a = 25 c unless otherwise noted) figure 1. peak pulse power rating curve figure 2. pulse power or current vs. initial junction temperature figure 3. pulse waveform t d - p u lse w idth (s) 0.1 1 10 100 1.0 ms 10 ms 0.1 s 1.0 s 10 s 100 s n on-repetiti v e p u lse w a v eform sho w n in fig. 3 t a = 25 c p ppm - peak p u lse po w er (k w ) 100 75 50 25 0 0 25 50 75 100 125 150 175 200 peak p u lse p o w er (p pp ) or c u rrent (i pp ) derating in percentage, % t j - initial temperat u re (c) 0 50 100 150 t d 0 1.0 2.0 3.0 4.0 i ppm - peak p u lse c u rrent, % i rsm t - time (ms) t r = 10 s peak v al u e i ppm half v al u e - i ppm i pp 2 10/1000 s w a v eform as defined b y r.e.a. t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm figure 4. typical junction capacitance uni-directional figure 5. power derating curve figure 6. maximum non-repetitive forward surge current 10 100 1000 6000 10 100 200 1.0 c j - j u nction capacitance (pf) v br - breakdo w n v oltage ( v ) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p meas u red at zero bias meas u red at stand-off v oltage v w m 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200 l = 0.375" (9.5 mm) lead lengths p d - po w er dissipation ( w ) t l - lead temperat u re (c) 60 hz resisti v e or ind u cti v e load 200 100 50 10 1 5 10 50 100 i fsm - peak for w ard s u rge c u rr ent (a ) nu m b er of cycles at 60 hz uni-directional only t j = t j max. 8 .3 ms single half sine- w a v e
p6ke6.8 thru p6ke540a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88369 revision: 22-oct-08 6 package outline dimensions in inches (millimeters) application note this p6ke tvs series is a low cost commercial product for use in applications where large voltage transients can permanently damage voltage-sensitive components. the p6ke series device types are designed in a small package size where power and space is a consideration. they are characterized by their high surge capability, extremely fast response time, and low impedance, (r on ). because of the unpredictable nature of transients, and the variation of the impedance with respect to these transients, impedance, per se, is not specified as a parametric value. however, a minimum voltage at low current conditions (bv) and a maximum clamping voltage (v c ) at a maximum peak pulse current is specified. in some instances, the thermal effect (see v c clamping voltage) may be responsible for 50 % to 70 %. of the observed voltage differential when subjected to high current pulses for several duty cycles, thus making a maximum impedance specification insignificant. in case of a severe current overload or abnormal transient beyond the maximum ratings, the transient voltage suppressor will initially fail 'short' thus tripping the system's circuit breaker or fuse while protecting the entire circuit. curves depicting clamping voltage vs. various current pulses are available from the factory. extended power curves vs. pulse time are also available. figure 7. typical transi ent thermal impedance t p - p u lse d u ration (s) transient thermal impedance (c/ w ) 10 100 1 0.1 0.001 0.01 0.1 1 10 100 1000 do-204ac (do-15) 0.034 (0. 8 6) 0.02 8 (0.71) dia. 0.140 (3.6) 0.104 (2.6) dia. 1.0 (25.4) mi n . 0.300 (7.6) 0.230 (5. 8 ) 1.0 (25.4) mi n .
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