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n - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 0 9 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 4 3 5 4 k p f e a t u r e s a p p l i c a t i o n s p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n n - c h a n n e l m o s f e t 3 0 v / 7 0 a , r d s ( o n ) = 4 . 5 m w ( t y p . ) @ v g s = 1 0 v r d s ( o n ) = 6 m w ( t y p . ) @ v g s = 4 . 5 v s u p e r h i g h d e n s e c e l l d e s i g n a v a l a n c h e r a t e d r e l i a b l e a n d r u g g e d l e a d f r e e a n d g r e e n d e v i c e s a v a i l a b l e ( r o h s c o m p l i a n t ) t o p v i e w o f k p a k p o w e r m a n a g e m e n t i n n o t e b o o k c o m p u t e r , o r d e c k t o p c o m p u t e r . s s s g d d d d g d s s s d d d apm4354 handling code temperature range package code package code kp : kpak operating junction temperature range c : -55 to 150 o c handling code tr : tape & reel assembly material g : halogen and lead free device apm4354 kp : apm4354 xxxxx xxxxx - date code assembly material n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a - t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j - s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . a n p e c d e f i n e s ? g r e e n ? t o m e a n l e a d - f r e e ( r o h s c o m p l i a n t ) a n d h a l o g e n f r e e ( b r o r c l d o e s n o t e x c e e d 9 0 0 p p m b y w e i g h t i n h o m o g e n e o u s m a t e r i a l a n d t o t a l o f b r a n d c l d o e s n o t e x c e e d 1 5 0 0 p p m b y w e i g h t ) .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 0 9 w w w . a n p e c . c o m . t w 2 a p m 4 3 5 4 k p a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) symbol parameter rating unit common ratings (t a =25 c unless otherwise noted) v dss drain - source voltage 30 v gss gate - source voltage 20 v t j maximum junction temperature 150 c t stg storage temperature range - 55 to 150 c i s diode continuous forward current t c =25 c 50 a t c =25 c 150 i d p 300 s pulse drain current tested t c =100 c 90 a mounted on large heat sink t c =25 c 70 i d continuous drain current t c =100 c 40 a t c =25 c 50 p d maximum power dissipation t c =100 c 20 w r q jc thermal resistance - junction to case 2.5 c /w mounted on pcb of 1in 2 pad area t a = 25 c 17 i d continuous drain current t a = 100 c 11 a t a = 25 c 2.5 p d maximum power dissipation t a = 100 c 1 w r q ja thermal resistance - junction to ambient 50 c /w mounted on pcb of minimum footprint t a = 25 c 14 i d continuous drain current t a = 100 c 8 a t a = 25 c 1.5 p d maximum power dissipation t a = 100 c 0.5 w r q ja thermal resistance - junction to ambient 75 c /w
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 0 9 w w w . a n p e c . c o m . t w 3 a p m 4 3 5 4 k p e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 4354kp symbol parameter test condition s min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 30 - - v v ds =2 4 v, v gs =0v - - 1 i dss zero gate voltage drain current t j =85 c - - 30 m a v gs(th) gate th reshold voltage v ds =v gs , i ds =250 m a 1.3 1.8 2.5 v i gss gate leakage current v gs =20v, v ds =0v - - 100 na v gs =10v, i ds = 30 a - 4.5 5.5 r ds(on) a drain - source on - state resistance v gs = 4. 5v,i ds = 20 a - 6 8 m w diode characteristics v sd a diode forward voltage i sd = 20 a, v gs =0v - 0.75 1.1 v t rr reverse recovery time - 36 - ns qrr reverse recovery charge i d s = 20 a, dl sd /dt = 100a/ m s - 29 - nc gate charge characteristics b q g total gate charge - 63 88 q gs gate - source charge - 10 - q gd gate - drain charge v ds =1 5 v, v gs = 10 v, i d s = 30 a - 19 - nc dynamic characteristics b r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz - 1 - w c iss input capacitance - 3350 - c oss output capacitance - 425 - c rss reverse transfer capacitance v gs =0v, v ds =15v, f requency =1.0mhz - 330 - pf t d(on) turn - on delay time - 24 44 t r turn - on rise time - 23 42 t d(off) turn - off delay time - 73 132 t f turn - off fall time v dd =1 5 v, r l =1 5 w , i d s =1a, v gen = 10v , r g =6 w - 27 50 ns note a : pulse test ; pulse width 3 00 m s, duty cycle 2% . note b : guara nteed by design, not subject to production testing .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 0 9 w w w . a n p e c . c o m . t w 4 a p m 4 3 5 4 k p t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) i d - drain current (a) normalized transient thermal resistance 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 t c =25 o c 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 60 70 80 t c =25 o c,v g =10v 0.1 1 10 80 0.1 1 10 100 400 t c =25 o c 1ms 1s 10ms 100ms dc rds(on) limit 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja :50 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 0 9 w w w . a n p e c . c o m . t w 5 a p m 4 3 5 4 k p r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s g a t e - s o u r c e o n r e s i s t a n c e v g s - g a t e - s o u r c e v o l t a g e ( v ) r ds(on) - on - resistance (m w ) normalized threshold voltage t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) 0 30 60 90 120 150 0 2 4 6 8 10 12 v gs =10v v gs =4.5v 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 i d =30a -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i ds =250 m a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 30 60 90 120 150 4.5v 3.5v 4v 3v v gs = 5,6,7,8,9,10v
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 0 9 w w w . a n p e c . c o m . t w 6 a p m 4 3 5 4 k p v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (pf) v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) v gs - gate - source voltage (v) t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . ) -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v gs = 10v i ds = 30a r on @t j =25 o c: 4.5m w 0.0 0.3 0.6 0.9 1.2 1.5 1.8 1 10 100 200 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 frequency=1mhz crss coss ciss 0 10 20 30 40 50 60 70 0 1 2 3 4 5 6 7 8 9 10 v ds = 15v i d = 30a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 0 9 w w w . a n p e c . c o m . t w 7 a p m 4 3 5 4 k p a v a l a n c h e t e s t c i r c u i t a n d w a v e f o r m s dut 0.01 w tp v dd v ds l i l r g e as v dd t av i as v ds t p v dsx(sus) s w i t c h i n g t i m e t e s t c i r c u i t a n d w a v e f o r m s v dd r d dut v gs v d s r g tp t d (on) t r t d (off) t f v gs v ds 90% 10%
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 0 9 w w w . a n p e c . c o m . t w 8 a p m 4 3 5 4 k p p a c k a g e i n f o r m a t i o n k p a k s y m b o l min. max. 1.20 0.38 4.80 5.00 5.90 6.10 5.70 5.80 0.05 3.49 3.69 a b d e e1 e f f1 g h millimeters c 0.19 0.25 1.27 bsc kpak 0.35 0.45 min. max. inches 0.047 0.015 0.050 bsc 0.007 0.010 0.189 0.197 0.232 0.240 0.224 0.228 0.002 0.014 0.018 0.137 0.145 1.00 0.039 0.51 0.020 0.15 0.006 g1 k 1.60 0.063 0.05 0.15 0.002 0.006 0.018 0.014 0.45 0.35 e 1 e f 1 g 1 g k f h b e d c a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 0 9 w w w . a n p e c . c o m . t w 9 a p m 4 3 5 4 k p c a r r i e r t a p e & r e e l d i m e n s i o n s a e 1 a b w f t p0 od0 b a0 p2 k0 b 0 section b-b section a-a od1 p1 h t1 a d application a h t1 c d d w e1 f 330.0 ? 2.00 50 min. 12.4+2.00 - 0.00 13.0+0.50 - 0.20 1.5 min. 20.2 min. 12.0 ? 0.30 1.75 ? 0.10 5.5 ? 0.10 p 0 p1 p 2 d 0 d1 t a 0 b 0 k 0 kpak 4.0 ? 0.10 8.0 ? 0.10 2.0 ? 0.10 1.5+0.10 - 0.00 1.5 min. 0.3 ? 0.05 6.5 ? 0.10 5 .3 ? 0.10 1.4 ? 0.10 (mm) d e v i c e s p e r u n i t package type unit quantity kpak tape & reel 2500
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 0 9 w w w . a n p e c . c o m . t w 1 0 a p m 4 3 5 4 k p t a p i n g d i r e c t i o n i n f o r m a t i o n k p a k r e f l o w c o n d i t i o n ( i r / c o n v e c t i o n o r v p r r e f l o w ) t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 t e m p e r a t u r e time critical zone t l to t p r e l i a b i l i t y t e s t p r o g r a m test item method description solderability mil - std - 883d - 2003 245 c, 5 sec holt mil - std - 883d - 1005.7 1000 hrs bias @125 c pct jesd - 22 - b, a102 168 hrs, 100%rh, 121 c tst mil - std - 883d - 1011.9 - 65 c~150 c, 200 cycles user direction of feed
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 0 9 w w w . a n p e c . c o m . t w 1 1 a p m 4 3 5 4 k p profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classification temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/sec ond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note: all temperatures refer to topside of the package. measured on the body surface. c l a s s i f i c a t i o n r e f l o w p r o f i l e s table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb eutectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c c u s t o m e r s e r v i c e anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 2f, no. 11, lane 218, sec 2 jhongsing rd., sindain city, taipei county 23146, taiwan tel : 886-2-2910-3838 fax : 886-2-2917-3838

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