Part Number Hot Search : 
LUG2040 2SB1731 B45192ER MA3200W 045CT FM107 400AC CY621
Product Description
Full Text Search
 

To Download FDPF33N25T Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ?2007 fairchild semiconductor corporation 1 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet october unifet tm fdp33n25 / FDPF33N25T 250v n-channel mosfet features ? 33a, 250v, r ds(on) = 0.094 ? @v gs = 10 v ? low gate charge ( typical 36.8 nc) ? low crss ( typical 39 pf) ?fast switching ? improved dv/dt capability description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies and active power factor correction. to-220 fdp series g s d to-220f fdpf series g s d d g s absolute maximum ratings symbol parameter fdp33n25 FDPF33N25T unit v dss drain-source voltage 250 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 33 20.4 33* 20.4* a a i dm drain current - pulsed (note 1) 132 132* a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 918 mj i ar avalanche current (note 1) 33 a e ar repetitive avalanche energy (note 1) 23.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 235 1.89 37 0.29 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c *drain current limited by maximum junction temperature thermal characteristics symbol parameter fdp33n25 FDPF33N25T unit r jc thermal resistance, junction-to-case 0.53 3.4 c/w r cs thermal resistance, case-to-sink typ. 0.5 -- c/w r ja thermal resistance, junction-to-ambient 62.5 62.5 c/w
2 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet package marking and ordering information device marking device package reel size tape width quantity fdp33n25 fdp33n25 to-220 - - 50 FDPF33N25T FDPF33N25T to-220f - - 50 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a, t j = 25 c 250 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.25 -- v/ c i dss zero gate voltage drain current v ds = 250v, v gs = 0v v ds = 200v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 16.5a -- 0.077 0.094 ? g fs forward transconductance v ds = 40v, i d = 16.5a (note 4) -- 26.6 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 1640 2135 pf c oss output capacitance -- 330 430 pf c rss reverse transfer capacitance -- 39 59 pf switching characteristics t d(on) turn-on delay time v dd = 125v, i d = 33a r g = 25 ? (note 4, 5) -- 35 80 ns t r turn-on rise time -- 230 470 ns t d(off) turn-off delay time -- 75 160 ns t f turn-off fall time -- 120 250 ns q g total gate charge v ds = 200v, i d = 33a v gs = 10v (note 4, 5) -- 36.8 48 nc q gs gate-source charge -- 10 -- nc q gd gate-drain charge -- 17 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 33 a i sm maximum pulsed drain-source diode forward current -- -- 132 a v sd drain-source diode forward voltage v gs = 0v, i s = 33a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 33a di f /dt =100a/ s (note 4) -- 220 -- ns q rr reverse recovery charge -- 1.71 -- c notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = 1.35mh, i as = 33a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 33a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
3 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics 24681012 10 0 10 1 10 2 150 o c 25 o c -55 o c * notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue 0 20 40 60 80 100 0.00 0.05 0.10 0.15 0.20 0.25 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0.20.40.60.81.01.21.41.6 10 0 10 1 10 2 150 o c * notes : 1. v gs = 0v 2. 250 s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] figure 5. capacitance characteristics f igure 6. gate charge characteristics 0 10203040 0 2 4 6 8 10 12 v ds = 125v v ds = 50v v ds = 200v * note : i d = 33a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 1000 2000 3000 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v]
4 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 16.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] figure 9-1. maximum safe operating area figure 9-2. maximum safe operating area for fdp33n25 for FDPF33N25T 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 s dc 10 ms 100 s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 10. maximum drain current vs. case temperature 25 50 75 100 125 150 0 10 20 30 40 i d , drain current [a] t c , case temperature [ o c]
5 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet typical performance characteristics (continued) figure 11-1. transient thermal response curve for fdp33n25 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 0.53 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2 figure 11-2. transient thermal response curve for FDPF33N25T 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z jc (t) = 3.4 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms 6 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet
peak diode recovery dv/dt test circuit & waveforms 7 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet
8 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet mechanical dimensions to-220 dimensions in millimeters
9 www.fairchildsemi.com fdp33n25 / FDPF33N25T rev. b fdp33n25 / FDPF33N25T 250v n-channel mosfet dimensions in millimeters package dimensions dimensions in millimeters to-220f potted * front/back side isolation voltage : ac 2500v
10 www.fairchildsemi.com 10 www.fairchildsemi.com fdp33n25 / FDPF33N25T 250v n-channel mosfet fdp33n25 / FDPF33N25T rev. b trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform c an be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? auto-spm? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? ecospark ? efficentmax? ezswitch?* ?* fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? millerdrive? motionmax? motion-spm? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? ? saving our world, 1mw /w /kw at a time? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supremos? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? trifault detect? truecurrent?* uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by co untry on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i41


▲Up To Search▲   

 
Price & Availability of FDPF33N25T

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X