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september 2009 doc id 15421 rev 4 1/17 17 stb18nm80, stf18nm80 stp18nm80, STW18NM80 n-channel 800 v, 0.25 ? , 17 a, mdmesh? power mosfet d 2 pak, to-220fp, to-220, to-247 features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description mdmesh? technology associates the benefits of the multiple drain process applied to stmicroelectronics' well known powermesh? horizontal layout structure. the resulting product has low on-resistance, hi gh dv/dt capability and excellent avalanche characteristics. figure 1. internal schematic diagram type v dss (@tjmax) r ds(on) max i d stb18nm80 800 v < 0.295 ? 17 a stf18nm80 800 v < 0.295 ? 17 a stp18nm80 800 v < 0.295 ? 17 a (1) 1. limited only by maximum temperature allowed STW18NM80 800 v < 0.295 ? 17 a to-220 d2pak to-247 1 2 3 1 2 3 to-220fp 1 3 1 2 3 table 1. device summary order codes marking package packaging stb18nm80 18nm80 d2pak tape and reel stf18nm80 18nm80 to-220fp tube stp18nm80 18nm80 to-220 tube STW18NM80 18nm80 to-247 tube www.st.com
contents stb/f/p/w18nm80 2/17 doc id 15421 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
stb/f/p/w18nm80 electrical ratings doc id 15421 rev 4 3/17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 d2pak to-247 to-220fp v ds drain-source voltage (v gs = 0) 800 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 17 17 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 10.71 10.71 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 68 68 (1) a p tot total dissipation at t c = 25 c 190 40 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s;t c = 25 c) 2500 v t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220 d2pak to-247 to-220fp r thj-case thermal resistance junction-case 0.66 3.13 c/w r thj-amb thermal resistance junc tion-amb 62.5 50 62.5 c/w r thj-pcb thermal resistance junction-pcb 30 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter max value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 4a e as single pulse avalanche energy (starting tj = 25 c, i d = i as , v dd = 50 v) 600 mj
electrical characteristics stb/f/p/w18nm80 4/17 doc id 15421 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 800 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,tc = 125 c 10 100 a a i gss gate body leakage current (v ds = 0) v gs = 30 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 8.5 a 0.25 0.295 ? table 6. dynamic symbol parameter test cond itions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward transconductance v ds = 15 v, i d = 8.5 a - 14 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 2070 210 29 - pf pf pf c oss eq. (2) 2. c oss eq . is defined as a constant equivalent ca pacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 640 v - 316 - pf r g gate input resistance f = 1 mhz gate dc bias = 0 test signal level = 20 mv open drain -4 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 640 v, i d = 17 a v gs = 10 v (see figure 17 ) - 70 13 40 - nc nc nc
stb/f/p/w18nm80 electrical characteristics doc id 15421 rev 4 5/17 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 400 v, i d = 8.5 a, r g = 4.7 ?, v gs = 10 v (see figure 16 and figure 21 ) - 18 28 96 50 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 7 28 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 17 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17 a, di/dt = 100 a/s, v dd = 100 v, (see figure 18 ) - 618 9.6 31.2 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17 a, di/dt = 100 a/s, v dd = 100 v, tj=150c (see figure 18 ) - 822 13 31.8 ns c a
electrical characteristics stb/f/p/w18nm80 6/17 doc id 15421 rev 4 2.1 electrical characteristi cs (curves) figure 2. safe operating area for to-220, d2pak figure 3. thermal impedance for to-220, d2pak figure 4. safe operating area for to-247 figure 5. thermal impedance for to-247 figure 6. safe operating area for to-220fp figure 7. thermal impedance for to-220fp i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e 0.01
stb/f/p/w18nm80 electrical characteristics doc id 15421 rev 4 7/17 figure 8. output characteristics figure 9. transfer characteristics figure 10. normalized b vdss vs temperature figure 11. static drain-source on-resistance figure 12. gate charge vs gate-source voltage figure 13. capacitance variations i d 20 10 0 0 10 v d s (v) 20 (a) 5 15 3 0 40 v g s =10v 5v 6v 7v 3 5 25 15 5 i d 20 10 5 0 0 4 v g s (v) 8 (a) 2 6 10 3 0 3 5 15 25 v d s =20v 40 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.95 0.9 8 1.00 1.0 3 1.06 i d =1ma r d s (on) 0.22 0.2 0 10 i d (a) ( ? ) 5 15 0.24 0.2 8 v g s =10v 0.26 v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =640v i d =17a 25 12 3 00 200 100 0 400 500 v d s v g s 600 700 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss 100000 1000
electrical characteristics stb/f/p/w18nm80 8/17 doc id 15421 rev 4 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250 a r d s (on) 1.9 1. 3 0.7 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.9 1.1 1.5 1.7 2.1 i d = 8 .5a v g s =10v
stb/f/p/w18nm80 test circuits doc id 15421 rev 4 9/17 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive wavefor m figure 21. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stb/f/p/w18nm80 10/17 doc id 15421 rev 4 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
stb/f/p/w18nm80 package mechanical data doc id 15421 rev 4 11/17 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 8 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
package mechanical data stb/f/p/w18nm80 12/17 doc id 15421 rev 4 dim. mm . x a m . p y t . n i m 6 . 4 4 . 4 a 7 . 2 5 . 2 b 5 7 . 2 5 . 2 d 7 . 0 5 4 . 0 e 1 5 7 . 0 f 0 7 . 1 5 1 . 1 1 f 5 . 1 5 1 . 1 2 f 2 . 5 5 9 . 4 g 7 . 2 4 . 2 1 g 4 . 0 1 0 1 h 6 1 2 l 6 . 0 3 6 . 8 2 3 l 6 . 0 1 8 . 9 4 l 6 . 3 9 . 2 5 l 4 . 6 1 9 . 5 1 6 l 3 . 9 9 7 l 2 . 3 3 a i d 7012510_rev_j a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 to-220fp mechanical data
stb/f/p/w18nm80 package mechanical data doc id 15421 rev 4 13/17 dim. mm. min. typ max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
package mechanical data stb/f/p/w18nm80 14/17 doc id 15421 rev 4 d2pak (to-26 3 ) mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 a1 0.0 3 0.2 3 0.001 0.00 9 b 0.70 0. 93 0.027 0.0 3 7 b 2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.2 3 1. 3 60.04 8 0.05 3 d 8 . 9 5 9 . 3 50. 3 52 0. 3 6 8 d1 7.50 0.2 9 5 e 10 10.40 0. 39 40.40 9 e1 8 .50 0. 33 4 e 2.54 0.1 e1 4. 88 5.2 8 0.1 9 20.20 8 h15 15. 8 50.5 9 00.624 j1 2.4 9 2.6 9 0.0 99 0.106 l2.2 9 2.7 9 0.0 9 0 0.110 l1 1.27 1.40 0.05 0.055 l2 1. 3 0 1.75 0.051 0.06 9 r 0.4 0.016 v2 0 8 0 8 0079457_m
stb/f/p/w18nm80 packaging mechanical data doc id 15421 rev 4 15/17 5 packaging mechanical data tape and reel shipment d 2 pak footprint dim. mm inch min. max. min. max. a 33 0 12.992 b 1.5 0.059 c12. 8 1 3 .2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.0 3 9 n 100 3 .9 3 7 t 3 0.4 1.197 ba s e qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.41 3 0.421 b0 15.7 15.9 0.61 8 0.626 d 1.5 1.6 0.059 0.06 3 d1 1.59 1.61 0.062 0.06 3 e1.651. 8 5 0.065 0.07 3 f 11.4 11.6 0.449 0.456 k0 4. 8 5.0 0.1 8 9 0.197 p0 3 .9 4.1 0.15 3 0.161 p1 11.9 12.1 0.46 8 0.476 p2 1.9 2.1 0.075 0.0 8 2 r 50 1.574 t0.250. 3 5 0.009 8 0.01 3 7 w 2 3 .7 24. 3 0.9 33 0.956 tape mechanical data
revision history stb/f/p/w18nm80 16/17 doc id 15421 rev 4 6 revision history table 9. document revision history date revision changes 25-feb-2009 1 first release 07-apr-2009 2 section 4: package mechanical data has been modified 20-apr-2009 3 r ds(on) max value has been corrected 09-sep-2009 4 document status promoted from preliminary data to datasheet
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