tm ?2010 fairchild semiconductor corporation 1 www.fairchildsemi.com FGP5N60LS rev. a1 FGP5N60LS 600v, 5a field stop igbt february 2010 absolute maximum ratings notes: 1: repetitive test , pulse width=100usec , duty=0.2, v ge =13.5v thermal characteristics symbol description ratings units v ces collector to emitter voltage 600 v v ges gate to emitter voltage ? 20 v i c collector current @ t c = 25 o c10 a collector current @ t c = 100 o c5 a i cm (1) pulsed collector current @ t c = 25 o c 36 a p d maximum power dissipation @ t c = 25 o c83 w maximum power dissipation @ t c = 100 o c33 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. units r ? jc thermal resistance, junction to case - 1.5 o c / w r ? ja thermal resistance, junction to ambient - 62.5 o c / w to-220 g c e g c e FGP5N60LS 600v, 5a field stop igbt features ? high current capability ? low saturation voltage: v ce(sat) =1.7v @ i c = 5a ? high input impedance ?rohs compliant applications ? hid ballast and wall dimmer general description using novel field stop igbt technology, fairchild?s new series of field stop igbts offer the optimum performance for hid bal- last where low conduction losses are essential.
2 www.fairchildsemi.com FGP5N60LS rev. a1 FGP5N60LS 600v, 5a field stop igbt package marking and ordering information electrical characteristi cs of the igbt t c = 25c unless otherwise noted device marking device package packaging type qty per tube max qty per box FGP5N60LS FGP5N60LS tt220 tube 50ea - symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 ? a 600 - - v ? bv ces ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 ? a -0.8-v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 ? a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 ? a, v ce = v ge 2.7 3.9 4.5 v v ce(sat) collector to emitter saturation voltage i c = 5a , v ge = 15v -1.72.1v i c = 5a , v ge = 15v, t c = 125 o c -1.8- v collector to emitter saturation voltage i c = 14a , v ge = 12v -2.73.2v i c = 14a , v ge = 12v, t c = 125 o c -3.1- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 278 - pf c oes output capacitance - 28 - pf c res reverse transfer capacitance - 11 - pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 5a, r g = 10 ? , v ge = 15v, inductive load, t c = 25 o c -4.3- ns t r rise time - 1.6 - ns t d(off) turn-off delay time - 36 - ns t f fall time - 118 - ns e on turn-on switching loss - 38 - ? j e off turn-off switching loss - 130 - ? j e ts total switching loss - 168 - ? j t d(on) turn-on delay time v cc = 400v, i c = 5a, r g = 10 ? , v ge = 15v, inductive load, t c = 125 o c -4.1- ns t r rise time - 1.8 - ns t d(off) turn-off delay time - 37 - ns t f fall time - 150 - ns e on turn-on switching loss - 80 - ? j e off turn-off switching loss - 168 - ? j e ts total switching loss - 248 - ? j q g total gate charge v ce = 400v, i c = 5a, v ge = 15v - 18.3 - nc q ge gate to emitter charge - 1.6 - nc q gc gate to collector charge - 7.9 - nc
3 www.fairchildsemi.com FGP5N60LS rev. a1 FGP5N60LS 600v, 5a field stop igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge te mperature at variant current level 0246810 0 10 20 30 40 13.5v 15v 20v t c = 25 o c 17v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0246810 0 10 20 30 40 13.5v 15v 20v t c = 125 o c 17v 12v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0123456 0 10 20 30 40 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 24681012 0 10 20 30 common emitter v ce = 20v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 1.0 1.5 2.0 2.5 3.0 10a 5a i c = 2.5a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ] 0 4 8 121620 0 4 8 12 16 20 i c = 2.5a 5a 10a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
4 www.fairchildsemi.com FGP5N60LS rev. a1 FGP5N60LS 600v, 5a field stop igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristics vs. gate resistance 0 4 8 121620 0 4 8 12 16 20 i c = 2.5a 5a 10a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 0 4 8 12 16 20 0 4 8 12 16 20 10a i c = 2.5a 5a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 110 0 100 200 300 400 500 600 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 5 10 15 20 0 3 6 9 12 15 common emitter t c = 25 o c 300v 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0.1 1 10 100 1000 0.01 0.1 1 10 100 1ms 10ms dc single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 0 1020304050 0.5 1 10 common emitter v cc = 400v, v ge = 15v i c = 5a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ]
5 www.fairchildsemi.com FGP5N60LS rev. a1 FGP5N60LS 600v, 5a field stop igbt typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. gate resistance collector current figure 17. switching loss vs. coll ector current figure 18. turn off switching soa characteristics 0 1020304050 10 100 300 common emitter v cc = 400v, v ge = 15v i c = 5a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 246810 0.1 1 10 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 246810 20 100 800 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 0 1020304050 30 100 1000 common emitter v cc = 400v, v ge = 15v i c = 5a t c = 25 o c t c = 125 o c e on e off switching loss [ ? j ] gate resistance, r g [ ? ] 246810 10 100 1000 common emitter v ge = 15v, r g = 10 ? t c = 25 o c t c = 125 o c e on e off switching loss [ ? j ] collector current, i c [a] 1 10 100 1000 0.1 1 10 50 safe operating area v ge = 13.5v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v]
6 www.fairchildsemi.com FGP5N60LS rev. a1 FGP5N60LS 600v, 5a field stop igbt typical performance characteristics figure 19.transient thermal impedance of igbt 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.03 0.1 1 2 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
7 www.fairchildsemi.com FGP5N60LS rev. a1 FGP5N60LS 600v, 5a field stop igbt mechanical dimensions to-220ab
FGP5N60LS 600v, 5a field stop igbt FGP5N60LS rev. a1 www.fairchildsemi.com 8 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fai rchild semiconductor corporation. as used herein: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform c an be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? auto-spm? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? optihit? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 supremos? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? trifault detect? truecurrent?* ? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product developm ent. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time withou t notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experie nce many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking str ong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full tr aceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i47 ?
|
