semihow rev.a0,sep 2009 HFB1N60S 1 3 2 ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 3.0 nc (typ.) ? extended safe operating area ? lower r ds(on) : 10 (typ.) @v gs =10v ? 100% avalanche tested thermal resistance characteristics features absolute maximum ratings t c =25 unless otherwise specified HFB1N60S 600v n - channel mosfet symbol parameter value units v dss drain - source voltage 600 v i d drain current ? continuous (t c = 25 ) 0.3 a drain current ? continuous (t c = 100 ) 0.18 a i dm drain current ? pulsed (note 1) 1.2 a v gs gate - source voltage 30 v e as single pulsed avalanche energy (note 2) 33 mj i ar avalanche current (note 1) 0.3 a e ar repetitive avalanche energy (note 1) 0.3 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t a = 25 ) 0.9 w power dissipation (t l = 25 ) - derate above 25 2.5 w 0.02 w/ t j , t stg operating and storage temperature range - 55 to +150 t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 symbol parameter typ. max. units r jl junction -to - lead -- 50 /w r ja junction -to - ambient -- 140 sep 2009 bv dss = 600 v r ds(on) typ = 10 i d = 0.3 a to - 92 1.gate 2. drain 3. source g d s
semihow rev.a0,sep 2009 HFB1N60S notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=59mh, i as =1.0a, v dd =50v, r g =25 ? , starting t j =25 c 3. i sd 0.3a, di/dt200a/s, v dd bv dss , starting t j =25 c 4. pulse test : pulse width 300s, duty cycle 2% 5. essentially independent of operating temperature electrical characteristics t c =25 c unless otherwise specified i s continuous source - drain diode forward current -- -- 0.3 a i sm pulsed source - drain diode forward current -- -- 1.2 v sd source - drain diode forward voltage i s = 0.3 a, v gs = 0 v -- -- 1.4 v trr reverse recovery time i s = 1.0 a, v gs = 0 v di f / dt = 100 a/ s (note 4) -- 190 -- ? qrr reverse recovery charge -- 0.53 -- c symbol parameter test conditions min typ max units v gs gate threshold voltage v ds = v gs , i d = 250 ? 2.0 -- 4.0 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 0.15 a -- 10 12 ? on characteristics bv dss drain - source breakdown voltage v gs = 0 v, i d = 250 ? 600 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 ? , referenced to25 -- 0.6 -- v/ i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 50 ? v ds = 480 v, t c = 125 -- -- 250 ? i gssf gate - body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 ? i gssr gate - body leakage current, reverse v gs = - 30 v, v ds = 0 v -- -- -100 ? off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 130 170 ? c oss output capacitance -- 22 29 ? c rss reverse transfer capacitance -- 5.0 6.5 ? dynamic characteristics t d(on) turn - on time v ds = 300 v, i d = 1.0 a, r g = 25 ? (note 4,5) -- 7 24 ? t r turn - on rise time -- 21 52 ? t d(off) turn - off delay time -- 13 36 ? t f turn - off fall time -- 27 64 ? q g total gate charge v ds = 480 v, i d = 1.0 a, v gs = 10 v (note 4,5) -- 3.0 4.0 nc q gs gate - source charge -- 0.5 -- nc q gd gate - drain charge -- 1.3 -- nc switching characteristics source - drain diode maximum ratings and characteristics
semihow rev.a0,sep 2009 HFB1N60S i dr , reverse drain current [a] v sd , source - drain voltage [v] typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 i d , drain current[a] r ds(on) [ ? ], drain-source on-resistance v gs = 10v v gs = 20v * note : t j = 25 o c i d , drain current [a] v ds , drain - source voltage [v] i d , drain current [a] v gs , gate - source voltage [v] 10 -1 10 0 10 1 0 50 100 150 200 250 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 1 2 3 4 0 2 4 6 8 10 12 v gs , gate-source voltage [v] q g , total gate charge [nc] * note : i d = 1a v ds = 300v v ds = 120v v ds = 480v
semihow rev.a0,sep 2009 HFB1N60S i d , drain current [a] v ds , drain - source voltage [v] z jl (t), thermal response t 1 , square wave pulse duration [sec] bv dss , (normalized) drain - source breakdown voltage t j , junction temperature [ o c] figure 7. breakdown voltage variation vs temperature figure 8. on - resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve typical characteristics (continued) 25 50 75 100 125 150 0.0 0.1 0.2 0.3 i d , drain current [a] t c , case temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? note : 1. v gs = 10 v 2. i d = 0.15 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c]
semihow rev.a0,sep 2009 HFB1N60S fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as = l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut 10v dut r g l i d
semihow rev.a0,sep 2009 HFB1N60S fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
semihow rev.a0,sep 2009 HFB1N60S package dimension 4.58 0.25 3.71 0.2 3 4 0.46 0.1 1.27typ 1.27typ 1.02 0.1 3.71 0.25 3.6 0.25 4.58 0.25 14.47 0.5 to - 92
semihow rev.a0,sep 2009 HFB1N60S h0 h h1 p p2 f1 f2 p1 d0 w1 w0 w2 w item symbol dimension [mm] reference tolerance component pitch p 12.7 0.5 side lead to center of feed hole p1 3.85 0.5 center lead to center of feed hole p2 6.35 0.5 lead pitch fi,f2 2.5 +0.2/ - 0.1 carrier tape width w 18.0 +1.0/ - 0.5 adhesive tape width w0 6.0 0.5 tape feed hole location w1 9.0 0.5 adhesive tape position w2 1.0 max center of feed hole to bottom of component h 19.5 1 center of feed hole to lead form h0 16.0 0.5 component height h1 27.0 max tape feed hole diameter d0 4.0 0.2 to - 92 taping
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