document number: 94510 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 09-feb-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 ultrafast rectifier, 2 x 35 a fred pt ? vs-70cru04pbf vishay semiconductors features ? ultrafast reverse recovery ? low forward voltage drop ? up to 175 c operating junction temperature ? common-cathode diodes ? low leakage current ? optimized for power conver sion: welding and industrial smps applications ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level ? halogen-free according to iec 61249-2-21 definition description the vs-70cru04pbf integrates two state of the art vishay semiconductors ultrafast re covery rectifiers in the common-cathode configuration. the planar structure of the diodes, and the platinum doping life-time control, provide a ultrasoft recovery current shape, together with the best overall performance, ru ggedness and reliability characteristics. these devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, smps, dc/dc converters. their extremely optimized stored charge and low recovery current reduce both over-dissipation in the switching elements (and snubbers) and emi/rfi. product summary package to-218 i f(av) 2 x 35 a v r 400 v v f at i f 1.32 v t rr typ. see recovery table t j max. 175 c diode variation common cathode base common cathode anode common cathode 1 2 1 2 2 anode 3 to-218 absolute maximum ratings parameter symbol test conditions max. units cathode to anode voltage v r 400 v continuous forward current per diode i f(av) t c = 116 c 35 a single pulse forwar d current per diode i fsm t c = 25 c 300 maximum power dissip ation per module p d t c = 100 c 47 w operating junction and storage temperatures t j , t stg - 55 to 175 c electrical specifications per diode (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 400 - - v forward voltage v f i f = 35 a - 1.11 1.32 i f = 35 a, t j = 125 c - 0.98 1.14 i f = 35 a, t j = 175 c - 0.92 1.05 reverse leakage current i r v r = v r rated - - 100 a t j = 150 c, v r = v r rated - - 2 ma junction capacitance c t v r = 400 v - 70 - pf
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94510 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 09-feb-11 vs-70cru04pbf vishay semiconductors ultrafast rectifier, 2 x 35 a fred pt ? dynamic recovery characteristics per diode (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1 a, di f /dt = 200 a/s, v r = 30 v - 32 38 ns reverse recovery time t rr t j = 25 c i f = 35 a v r = 200 v di f /dt = 200 a/s -72- t j = 125 c - 130 - peak recovery current i rrm t j = 25 c - 7.7 - a t j = 125 c - 16.5 - reverse recovery charge q rr t j = 25 c - 0.28 - c t j = 125 c - 1.08 - thermal - mechanical specifications parameter symbol test condi tions min. typ. max. units thermal resistance, junction to case per diode r thjc -0.81.6 k/w both diodes - 0.4 0.8 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.2 - weight -4-g -0.13- oz. mounting torque 1.2 (10) - 2.4 (20) n ??? m (lbf ?? in) marking device case style to-218 70cru04
document number: 94510 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 09-feb-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vs-70cru04pbf ultrafast rectifier, 2 x 35 a fred pt ? vishay semiconductors fig. 1 - maximum forward voltage drop characteristics (per diode) fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics (per diode) i f - instantaneous forward current (a) forward voltage drop (v) 0 0.5 1.0 1.5 2.0 2.5 3.0 1 10 1000 100 t j = 175 c t j = 125 c t j = 25 c i r - reverse current (a) v r - reverse voltage (v) 50 100 150 200 350 300 250 400 0.001 0.01 0.1 1 10 100 1000 t j = 175 c 25 c 150 c 125 c c t - junction capacitance (pf) v r - reverse voltage (v) 1101001000 10 1000 100 t j = 25 c 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single pulse (thermal resistance) p dm t 2 t 1 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94510 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 09-feb-11 vs-70cru04pbf vishay semiconductors ultrafast rectifier, 2 x 35 a fred pt ? fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r allowable case temperature (c) i f(av) - average forward current (a) 20 15 10 530 25 35 40 0 140 160 170 180 100 120 130 150 110 square wave (d = 0.50) rated v r applied see note (1) dc average power loss (w) i f(av) - average forward current (a) 20 25 30 15 10 5 35 0 40 0 20 30 10 35 15 25 5 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc rms limit t rr (ns) di f /dt (a/s) 100 1000 50 150 80 100 120 130 140 70 60 90 110 i f = 35 a v rr = 200 v t j = 25 c t j = 125 c q rr (nc) di f /dt (a/s) 100 1000 0 2500 1000 1500 2000 500 i f = 35 a v rr = 200 v t j = 25 c t j = 125 c
document number: 94510 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 09-feb-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vs-70cru04pbf ultrafast rectifier, 2 x 35 a fred pt ? vishay semiconductors ordering information table links to related documents dimensions www.vishay.com/doc?95214 part marking information www.vishay.com/doc?95219 1 - vishay semiconductors product 2 - current rating (70 = 70 a) 3 - common cathode 4 -to-218 5 - ultrafast recovery 6 - voltage rating (04 = 400 v) 7 - pbf = lead (pb)-free tube standard pack quantity: 30 pieces device code 5 1 3 2 4 6 7 vs- 70 c r u 04 pbf
document number: 95214 for technical questions concer ning discrete products, cont act: diodes-tech@vishay.com www.vishay.com revision: 21-apr-08 for technical qu estions concerning module products , contact: ind-modules@vishay.com 1 fred pt tm to-218 outline dimensions vishay high power products dimensions in millimeters (inches) 45.0 0.5 88 0.005 (14.94 0.13) ? 0.159 0.002 (? 4.04 0.05) 0.3066 0.003 (7.79 0.0 8 ) 0.4 8 00 0.005 (12.19 0.13) 0.6025 0.005 (15.30 0.13) ? 0.11 8 x 0.01 (? 3.00 x 0.254) 0.2165 bsc 0.09 8 0 0.002 (2.49 0.05) 0.1 8 90 0.005 (4. 8 0 0.13) 0.050 0.003 (1.27 0.0 8 ) 5.0 (2 places) 3.0 (3 places) 123 dp. 0.0430 + 0.006 - 0.000 (1.09 ) + 0.15 - 0.00 0.0197 + 0.006 - 0.000 (0.50 ) + 0.15 - 0.00
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